N/A

-

BGA-119

119

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

GS882Z18CB

9 Mbit

2

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS864272GC

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

285 mA, 385 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

10 Weeks

YES

48

48

有

GS71116AGU-10T

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

表面贴装

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

10 ns

70 °C

0 to 70 °C

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1

ASYNCHRONOUS

0.1 mA

64KX16

3-STATE

1.2 mm

16

16 Bit

1 Mbit

0.002 A

1048576 bit

Commercial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

8 mm

6 mm

N/A

-

8 Weeks

YES

165

165

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

BGA

200 MHz

FBGA

1.8000 V

1.7 V

18 Bit

1.9 V

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q18BGD-200

200 MHz

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

SYNCHRONOUS

0.6 mA

0.45

4MX18

3-STATE

1.4 mm

18

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

2.036513 oz

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

85 °C

有

GS832032AGT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS832032AGT

3A991.B.2.B

同步突发

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8662D38BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

85 °C

有

GS8321E18AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS8321E18AGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

锡银铜

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

无

GS88136CD-333I

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

Tray

GS88136CD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 85 °C

Tray

GS832136AGD

同步突发

Memory & Data Storage

36 Mbit

215 mA, 250 mA

6.5@Flow-Through/3@P

1 M x 36

SRAM

36

SRAM

N/A

-

BGA-165

165

DDR

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

-40 to 100 °C

Tray

GS8662DT10BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

705 mA

0.45

8 M x 9

SRAM

72

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS816118DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS864218GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

100

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

2

Flow-Through/Pipelined

36 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8662DT06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

10

- 40 C

1.9 V

+ 85 C

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

DDR-II

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

810 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Industrial grade

350 MHz

-40 to 100 °C

1

Pipelined

23 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS816132DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

225 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS864436E-225I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/225@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS864436E

无

3A991.B.2.B

同步突发

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

Industrial grade

357 MHz

FBGA

表面贴装

18 Bit

4 MWords

Synchronous

1.8000 V

QDR

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

-40 to 100 °C

Tray

GS8662Q18BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

995 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

350 MHz

+ 70 C

1.9 V

0 to 70 °C

GS8662DT37BD

72 Mbit

885 mA

0.45

2 M x 36

19 Bit

72

Commercial

N/A

-

BGA-165

165

Details

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

-40 to 100 °C

Tray

GS8662D10BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 9

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

15

- 40 C

1.9 V

+ 85 C

350 MHz

有

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS8662D10BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Commercial grade

375 MHz

0 to 70 °C

1

Pipelined

20 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8662S18BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302TT19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

755 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM