N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

695 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS864036GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS8161E18DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

1.115 A

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

72 Mbit

2

920 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

Parallel

SyncBurst

SDR

GSI技术

GSI技术

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

4

295 mA, 435 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 85 °C

Tray

GS864218GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

250@Flow-Through/400@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

70 °C

有

GS8161Z36DGD-400

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

SDR

36

GSI技术

4 ns

0 to 70 °C

Tray

GS8161Z36DGD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

165

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

23 Bit

144 Mbit

Commercial

N/A

-

165

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Commercial grade

0 to 70 °C

1

Pipelined

19 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8321E32AGD

同步突发

Memory & Data Storage

36 Mbit

4

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

无

GS88118CD-250IV

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

18 Bit

2, 2.7 V

有

250 MHz

-40 to 85 °C

Tray

GS88118CD

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

145 mA, 185 mA

5.5@Flow-Through/3@P

512 k x 18

1.4 mm

8

SRAM

9

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-260

260

BGA

1.3500 V

Synchronous

18 Bit

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

QDR-III

625/400 MHz

0 to 70 °C

Tray

GS8673EQ18BGK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

2.11 A

0.4

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

165

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

-40 to 100 °C

Tray

GS8662D06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT38E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T07BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

575 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

表面贴装

1.9 V

Commercial grade

0 to 70 °C

1

Pipelined

20 Bit

18 Mbit

Commercial

N/A

-

8 Weeks

TQFP-100

YES

100

100

3 V

Synchronous

2 MWords

36 Bit

3.6 V

表面贴装

有

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8640FZ36GT-7.5

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

133.3 MHz

TQFP

SDR

3.3000 V

0 to 70 °C

Tray

GS8640FZ36GT

e3

有

3A991.B.2.B

NBT Flow Through

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

230 mA

7.5 ns

Flow-Through

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

SRAM

20 mm

14 mm

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

400 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 85 °C

Tray

GS8320Z18AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

285 mA, 375 mA

4 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161Z18DGD

NBT

85 °C

-40 °C

Memory & Data Storage

18 Mbit

2

270 mA, 340 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS832236AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

有

GS8321E18AGD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8321E18AGD

3A991.B.2.B

同步突发

85 °C

0 °C

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

222@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.5 ns

85 °C

有

GS832218AGB-333I

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

-40 to 100 °C

Tray

GS832218AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D38BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8640Z18GT

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM