N/A

-

165

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

2

Pipelined

20 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT37BD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

735 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

209

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

Compliant

有

133 MHz

+ 85 C

3.6 V

- 40 C

14

-40 to 85 °C

Tray

GS8322Z72C

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

36 Mbit

8

220 mA, 255 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342Q10BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

895 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

Compliant

85 °C

0 °C

1.8 V

2

22 b

72 Mb

72

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182S18BGD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

720 mA

Pipelined

1 M x 18

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662Q36BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

BGA

Industrial grade

-40 to 100 °C

Tray

GS8662Q36BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

905 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

225 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36GE-225IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

153.8@Flow-Through/225@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS880F18CGT

流过

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

145 mA

5.5 ns

Flow-Through

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Bulk

GS81302TT38E

SigmaDDR-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

895 mA

4 M x 36

21 b

SRAM

144 Mb

144

SRAM

无

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

42

-40 to 85 °C

Tray

GS882Z36CB

NBT Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8342Q37BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

1.01 A

Pipelined

1 M x 36

19 b

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662DT38BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

940 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

200@Flow-Through/333@Pipelined MHz

Compliant

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

无

GS832136AD-333IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.7

BGA

Industrial grade

表面贴装

2, 2.7 V

36 Bit

1 MWords

Synchronous

-40 to 100 °C

Bulk

GS832136AD

3A991.B.2.B

同步突发

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

表面贴装

1.9 V

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302D06E

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

940 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SMD/SMT

Parallel

GSI TECHNOLOGY

GSI技术

GS8640FZ18GT-5.5

5.5 ns

4000000

3

TQFP

3.3000 V

Synchronous

Compliant

3.6 V

2.3 V

LQFP,

FLATPACK, LOW PROFILE

PLASTIC/EPOXY

未说明

70 °C

有

2.5 V

LQFP

RECTANGULAR

活跃

5.62

QFP

Commercial grade

181.8 MHz

SDR

3 V

4 MWords

18 Bit

3.6 V

表面贴装

+ 70 C

0 C

0 to 70 °C

GS8640FZ18GT

e3

有

3A991.B.2.B

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

270 mA

5.5 ns

Flow-Through

4 M x 18

1.6 mm

18

22 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

0 C

3.6 V

+ 70 C

167 MHz

BGA, BGA119,7X17,50

网格排列

3

4000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

8 ns

70 °C

有

GS8642Z18GB-167

167 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

0 to 70 °C

Tray

GS8642Z18GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

3-STATE

1.99 mm

18

22 Bit

SRAM

72 Mbit

0.1 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8662S08BGD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

580 mA

8 M x 8

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

5.5 ns

85 °C

有

GS8322Z18AGB-250IV

250 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

-40 to 100 °C

Bulk

GS8322Z18AGB

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

36 Bit

2 MWords

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662QT37BD-333I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

Bulk

GS8662QT37BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

1.11 A

Pipelined

2 M x 36

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662R09BD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

535 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

+ 70 C

200 MHz

有

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

0 to 85 °C

Bulk

GS8662QT37BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

740 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mb

Commercial

SRAM

无

N/A

-

BGA-119

119

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

42

-40 to 85 °C

Tray

GS882Z36CGB

NBT

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无