N/A

-

8 Weeks

BGA-165

YES

165

165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q10BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.48

BGA

Industrial grade

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

250 MHz

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

730 mA

0.45

8 M x 9

3-STATE

1.4 mm

9

0.25 A

72

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-209

209

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8162Z72CGC

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

320 mA, 460 mA

4.5 ns

Flow-Through/Pipelined

256 k x 72

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS816136DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

250 MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 70 °C

Tray

GS816273CGC

Pipeline

Memory & Data Storage

18 Mbit

8

350 mA

5.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

- 40 C

1.9 V

+ 85 C

375 MHz

有

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

DDR-II

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

-40 to 100 °C

Tray

GS81302R08E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

855 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS864418E

同步突发

Memory & Data Storage

72 Mbit

2

235 mA, 285 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

133 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 70 °C

GS832272GC

36 Mbit

8

210 mA, 235 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

36 Mbit

Commercial

N/A

-

165

18 Bit

1 MWords

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

表面贴装

-40 to 85 °C

1

Pipelined

20 Bit

18 Mbit

Industrial

N/A

-

165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

400 MHz

-40 to 85 °C

0.45

18

N/A

-

BGA-165

165

DDR

Commercial grade

350 MHz

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

0 to 85 °C

Tray

GS8662TT07BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

590 mA

0.45

8 M x 8

SRAM

72

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

730 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

142.8@Flow-Through/225@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

225 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS8322Z72C

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

8

265 mA, 370 mA

7 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

9 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

-40 to 100 °C

Tray

GS8342T09BGD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

610 mA

0.45

4 M x 9

SRAM

36

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4 ns

85 °C

无

GS832236AB-400I

400 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS832236AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662Q37BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

1.195 A

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 70 °C

Tray

GS832272C

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

8

210 mA, 235 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

-40 to 100 °C

36 Mbit

2

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302TT11GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

-40 to 100 °C

Tray

GS8342DT20BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

795 mA

Pipelined

2 M x 18

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662Q08BD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

250 MHz

FBGA

0 to 85 °C

Tray

GS8662Q08BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

720 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

22 Bit

SRAM

72 Mbit

67108864 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342D06BD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

450 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8342D06BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

795 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.25 A

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4 ns

85 °C

有

GS8321E36AGD-400

400 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

0 to 85 °C

Tray

GS8321E36AGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

锡银铜

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS864236B

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

32 Bit

2, 2.7 V

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

153.8@Flow-Through/200@Pipelined MHz

-40 to 100 °C

Tray

GS8321E32AD

同步突发

Memory & Data Storage

36 Mbit

235 mA, 270 mA

6.5@Flow-Through/3@P

1 M x 32

SRAM

36

SRAM