N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

300 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

-40 to 85 °C

Tray

GS88237CGB

SCD/DCD Pipeline

Memory & Data Storage

9 Mbit

2

245 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

165

9 Bit

表面贴装

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

-40 to 85 °C

1

Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

85 °C

无

GS8321E32AD-333V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8321E32AD

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 32

1.4 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

表面贴装

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

0 to 85 °C

GS8662D08BGD

72 Mbit

2

500 mA

Pipelined

8 M x 8

21 Bit

72 Mbit

Commercial

N/A

-

165

Synchronous

1.8000 V

Industrial grade

333 MHz

FBGA

DDR

表面贴装

9 Bit

16 MWords

-40 to 100 °C

1

Pipelined

23 Bit

144 Mbit

Industrial

N/A

-

BGA-119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 70 °C

9 Mbit

2

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS832236AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 85 °C

Tray

GS832218AGB

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

225 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS8322Z72C-166I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

125@Flow-Through/166@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS8322Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

36 Mbit

8

SYNCHRONOUS

235 mA, 300 mA

8 ns

Flow-Through/Pipelined

512 k x 72

1.7 mm

72

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662S36BD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

2

890 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

153.8@Flow-Through/225@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

225 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

0 to 70 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

270 mA, 370 mA

6.5@Flow-Through/2.7

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

表面贴装

2.7, 3.6 V

36 Bit

1 MWords

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320Z36AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaSIO DDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302S09E

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

16 M x 9

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

4.5 ns

85 °C

有

GS880E18CGT-333I

333 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.6

QFP

Industrial grade

-40 to 85 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

-40 to 100 °C

Tray

GS8342DT11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

795 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

未说明

0.45 ns

无

GS81302D11E-350

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.62

BGA

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

0 to 85 °C

Tray

GS81302D11E

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

144 Mbit

2

SYNCHRONOUS

940 mA

Pipelined

16 M x 9

1.5 mm

9

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

133 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

4

230 mA, 270 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8662D37BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

885 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

0 C

3.6 V

+ 70 C

333 MHz

有

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

GSI技术

GSI技术

SyncBurst

SDR

Parallel

SMD/SMT

2.3 V

36

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

590 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

165

165

70 °C

无

GS8182T36BD-400

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

0.45 ns

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

512KX36

1.4 mm

36

19 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

FBGA

DDR

0 to 85 °C

144 Mbit

2

940 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Commercial

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Details

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS8640E18GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

270 mA, 370 mA

5.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS881E32CD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS881E32CD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

1.4 mm

32

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm