GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8662T20BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	400 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				400 MHz	FBGA	DDR	-40 to 100 °C																						72 Mbit	1		635 mA		Pipelined	4 M x 18				21 Bit		72 Mbit			Industrial
GS8662Q19BD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	N	DDR	Commercial grade				200 MHz	FBGA	QDR	1.8000 V	Synchronous	4 MWords	18 Bit	表面贴装	有	200 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 85 °C	Tray	GS8662Q19BD				SigmaQuad-II+ B2				Memory & Data Storage												72 Mbit	2		600 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS832036AGT-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	4.2 ns	85 °C	有	GS832036AGT-375	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.7	QFP	Commercial grade	238@Flow-Through/375@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS832036AGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 3.3; SYNCHRONOUS BURST		Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100	不合格		OTHER	36 Mbit	4	SYNCHRONOUS	270 mA, 380 mA	4.2 ns	Flow-Through/Pipelined	1 M x 36		1.6 mm	36	20 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8161Z18DGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	0 to 70 °C	Tray	GS8161Z18DGD				NBT				Memory & Data Storage												18 Mbit	2		255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342DT11BGD-500	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				表面贴装	1.9 V	9 Bit	4 MWords	Synchronous	1.7 V	1.8000 V	QDR	FBGA	500 MHz	有	500 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342DT11BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	2		855 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mb			Commercial							SRAM
GS81302TT37GE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	1.9 V	表面贴装	333 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	3	4000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS81302TT37GE-333I	1.8 V	LBGA	RECTANGULAR	GSI技术	不推荐	GSI TECHNOLOGY	5.06	BGA	Industrial grade	333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	-40 to 100 °C			e1	有	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	144 Mbit	1	SYNCHRONOUS	860 mA		Pipelined	4 M x 36		1.5 mm	36	21 Bit		144 Mbit		150994944 bit	Industrial	PARALLEL		DDR SRAM		1.9 V	1.7 V		17 mm	15 mm
GS840H32AGB-100	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	119	119	128000	PLASTIC/EPOXY	未说明	12 ns	70 °C	有	GS840H32AGB-100	131072 words	3.3 V	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.21	BGA			BGA,	网格排列	3				e1	有	3A991.B.2.B		锡银铜	FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41		CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL			SYNCHRONOUS				128KX32		2.19 mm	32					4194304 bit		PARALLEL		缓存SRAM		3.6 V	3 V		22 mm	14 mm
GS8162Z18DGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	-40 to 100 °C	Tray	GS8162Z18DGD				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		275 mA, 355 mA	4 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial							SRAM
GS81302TT11GE-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	9 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302TT11GE				SigmaDDR-II+				Memory & Data Storage												144 Mbit	1		895 mA		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8662D09BD-350M	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	表面贴装	有	350 MHz	+ 125 C	1.9 V	- 55 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	DDR	LBGA,	GRID ARRAY, LOW PROFILE	8000000	PLASTIC/EPOXY	-55 °C	未说明	0.45 ns	125 °C	无	GS8662D09BD-350M	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.79	Military grade	350 MHz	FBGA	QDR	1.8000 V	Synchronous	8 MWords	9 Bit		Tray	GS8662D09BD			3A991.B.2.B	SigmaQuad-II				Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			MILITARY	72 Mbit		SYNCHRONOUS	845 mA		Pipelined	8 M x 9		1.4 mm	9	23 Bit	SRAM	72 Mbit		75497472 bit	Military	PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS832236AB-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	333 MHz	SDR	N	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	14	0 C	2.7 V	+ 70 C	BGA, BGA119,7X17,50	网格排列	1000000	PLASTIC/EPOXY	BGA119,7X17,50	未说明	5 ns	70 °C	无	GS832236AB-333V	333 MHz	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	200@Flow-Through/333@Pipelined MHz	FBGA	0 to 85 °C	Tray	GS832236AB	e0	无	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	1.8/2.5 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS	270 mA, 355 mA	5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	1.7 V	2 V	1.7 V	SRAM	22 mm	14 mm
GS8662D07BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662D07BD				SigmaQuad-II+ B4				Memory & Data Storage												72 Mbit	2		735 mA		Pipelined	8 M x 8				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS8162Z72CC-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	72 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	256000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	无	GS8162Z72CC-150	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.17	BGA	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	0 to 70 °C	Tray	GS8162Z72CC		无	3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B209	不合格		COMMERCIAL	18 Mbit	8	SYNCHRONOUS	210 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	256 k x 72		1.7 mm	72	18 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342T10BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342T10BGD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		575 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS832218AB-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	+ 85 C	2.7 V	- 40 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	SDR	BGA, BGA119,7X17,50	无	GS832218AB-333IV	活跃	GSI TECHNOLOGY	BGA	Industrial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	18 Bit	2, 2.7 V	表面贴装	有	333 MHz	-40 to 100 °C	Tray	GS832218AB		无		Pipeline/Flow Through				Memory & Data Storage												36 Mbit	2		265 mA, 350 mA	5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS81302DT37E-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165		300 MHz	FBGA	1.8000 V	1.7 V	Synchronous	36 Bit	1.9 V	有	300 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II			-40 to 100 °C	Tray	GS81302DT37E				SigmaQuad-II+ B4				Memory & Data Storage												114 Mbit			925 mA	0.45		4 M x 36					SRAM			144								SRAM
GS8640Z18GT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Commercial grade				133.3@Flow-Through/200@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	4 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8640Z18GT				NBT Pipeline/Flow Through				Memory & Data Storage												72 Mbit	2		205 mA, 270 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Commercial							SRAM
GS81302TT37E-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR-II	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302TT37E				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		995 mA		Pipelined	4 M x 36				21 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8342QT37BGD-357	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				357 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	357 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342QT37BGD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		1.095 A		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS832236AB-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	BGA, BGA119,7X17,50	网格排列	1000000	PLASTIC/EPOXY	BGA119,7X17,50	未说明	7.5 ns	70 °C	无	GS832236AB-150V	150 MHz	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	133@Flow-Through/150@Pipelined MHz	FBGA	0 to 85 °C	Tray	GS832236AB	e0	无	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	1.8/2.5 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS	200 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	1.7 V	2 V	1.7 V	SRAM	22 mm	14 mm
GS832132AGD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	1 MWords	32 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	7.5 ns	85 °C	有	GS832132AGD-150V	BGA	5.3	GSI TECHNOLOGY	活跃	RECTANGULAR	LBGA	1.8 V	Commercial grade	133@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS832132AGD			3A991.B.2.B	同步突发		PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit	4	SYNCHRONOUS	200 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	1 M x 32		1.4 mm	32	20 Bit	SRAM	36 Mbit		33554432 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8321Z18AD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	2 MWords	18 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	7.5 ns	70 °C	无	GS8321Z18AD-150V	150 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Commercial grade	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS8321Z18AD	e0	无	3A991.B.2.B	NBT	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.8/2.5 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	185 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18		SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	1.7 V	2 V	1.7 V	SRAM	15 mm	13 mm
GS81302S36E-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR-II	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302S36E				SigmaSIO DDR-II				Memory & Data Storage												144 Mbit	2		1.065 A		Pipelined	4 M x 36				21 Bit	SRAM	144 Mbit			Industrial							SRAM
GS8182T36BGD-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	375 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	512 kWords	36 Bit	1.9 V	表面贴装	Commercial grade					0 to 70 °C																							1				Pipelined					19 Bit		18 Mbit			Commercial
GS8342T06BGD-550I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaDDR-II+	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	15	Industrial grade				550 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	550 MHz	+ 85 C	1.9 V	- 40 C	DDR	Details	-40 to 100 °C	Tray	GS8342T06BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		810 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM