N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 85 °C

Tray

GS8322Z36AGD

NBT

Memory & Data Storage

36 Mbit

4

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

DDR

-40 to 100 °C

72 Mbit

1

765 mA

Pipelined

2 M x 36

20 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302S09GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

950 mA

Pipelined

16 M x 9

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q19BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

785 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

QDR-II

Industrial grade

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

-40 to 100 °C

Tray

GS81302D36GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

1.115 A

0.45

4 M x 36

SRAM

144

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

Industrial grade

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

-40 to 100 °C

GS8662Q37BD

72 Mbit

1.11 A

0.45

2 M x 36

72

Industrial

N/A

-

8 Weeks

TQFP-100

YES

100

100

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS880E18CGT-150IV

150 MHz

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Industrial grade

-40 to 85 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS880E32CGT

DCD

Memory & Data Storage

9 Mbit

2

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

870 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8182S09BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

2

690 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS880Z36CGT

NBT

Memory & Data Storage

9 Mbit

1

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

表面贴装

1.9 V

9 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

350 MHz

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662DT11BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

705 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

2.3 V

36

0 C

3.6 V

+ 70 C

375 MHz

有

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

DDR-II

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

- 55 C

1.9 V

+ 125 C

350 MHz

有

-55 to 125 °C

Tray

GS81302T09E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

0.45

16 M x 9

SRAM

144

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662DT38BD-500I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

BGA

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662DT38BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

1.17 A

Pipelined

2 M x 36

1.4 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8640Z18GT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

153@Flow-Through/250@Pipelined MHz

TQFP

SDR

0 to 70 °C

Tray

GS8640Z18GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

230 mA, 315 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8182D08BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

690 mA

Pipelined

2 M x 8

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

0 to 70 °C

Tray

GS882Z18CB

NBT

Memory & Data Storage

9 Mbit

2

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

85 °C

无

GS8321E36AD-150V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8321E36AD

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 70 °C

Tray

GS864272C

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

375 mA, 520 mA

5.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS882Z18CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

2

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8640E36GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

275 mA, 380 mA

6.5@Flow-Through/3@P

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662QT10BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

850 mA

Pipelined

8 M x 9

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 100 °C

Tray

GS8162Z18DGD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT37BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

1.015 A

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM