N/A

-

8 Weeks

TQFP-100

YES

100

100

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS864018GT-300

4194304 words

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

3.3000 V

3 V

18 Bit

3.6 V

Compliant

300 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

0 to 70 °C

GS864018GT

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

5.5@Flow-Through/2.3

4 M x 18

1.6 mm

18

22 b

72 Mb

72

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

860 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Industrial

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

UNSPECIFIED

未说明

70 °C

有

GS880Z18CGT-200V

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

Tray

GS880Z18CGT

3A991.B.2.B

NBT

70 °C

0 °C

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

512 k x 18

1.6 mm

18

18 b

SRAM

9 Mb

9437184 bit

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

TQFP-100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

-40 to 85 °C

85 °C

-40 °C

9 Mbit

1

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342QT37BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

895 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SigmaQuad-II+

Details

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302Q07GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.26 A

Pipelined

16 M x 8

23 b

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS81302S18E-333

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

333 MHz

FBGA

DDR

0 to 85 °C

Tray

GS81302S18E

无

3A991.B.2.B

SigmaSIO DDR-II

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

890 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

0 to 85 °C

GS8662Q07BGD

85 °C

0 °C

1.8 V

72 Mbit

2

720 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

-40 to 100 °C

Bulk

GS8662T07BD

100 °C

-40 °C

1.8 V

72 Mbit

1

505 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662S18BD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

745 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662T11BGD-450I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.5

BGA

Industrial grade

450 MHz

FBGA

-40 to 100 °C

Tray

GS8662T11BGD

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

705 mA

Pipelined

8 M x 9

1.4 mm

9

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 100 °C

Bulk

GS8162Z36DD

NBT Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

YES

144

144

GS4288S09L-33

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.7

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

32000000

PLASTIC/EPOXY

未说明

无

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

300 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 70 C

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

4.5 ns

85 °C

有

GS8162Z18DGD-333

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Bulk

GS8162Z18DGD

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

18 Mbit

2

SYNCHRONOUS

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662R18BD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS8662T07BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-119

YES

119

119

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

14 X 22 MM, 1.27 MM PITCH, FPBGA-119

网格排列

4000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS81284Z36B-250V

1.8 V

BGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.78

BGA

Commercial grade

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

4

SYNCHRONOUS

380 mA, 500 mA

6.5 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

0 to 85 °C

85 °C

0 °C

1.8 V

72 Mbit

1

695 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Commercial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

有

GS8321Z18AGD-150V

150 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Bulk

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

185 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

-40 to 100 °C

Bulk

GS832218AB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 b

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-119

119

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

133.3@Flow-Through/150@Pipelined MHz

Compliant

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

表面贴装

-40 to 85 °C

GS88218CB

85 °C

-40 °C

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

85 °C

无

GS8321E36AD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Bulk

GS8321E36AD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 b

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

0 to 85 °C

GS8662R08BGD

85 °C

0 °C

1.8 V

72 Mbit

1

495 mA

Pipelined

8 M x 8

21 Bit

72 Mbit

Commercial

无