N/A

-

10 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8161Z36DGT-150

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

QFP

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

Tray

GS8161Z36DGT

3A991.B.2.B

NBT

70 °C

0 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

512 k x 36

1.6 mm

36

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

15

- 40 C

1.9 V

+ 85 C

400 MHz

有

Tray

GS8662D

活跃

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

DDR

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Bulk

GS8662D36BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.8 V

72 Mbit

2

400 MHz

950 mA

450 ps

SRAM

Parallel

Pipelined

2 M x 36

-

19 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36

无

N/A

-

7 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

Details

SDR

Tray

GSI Technology Inc.

GS840Z

活跃

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

128000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

5.5 ns

85 °C

有

GS840Z36CGT-250I

250 MHz

131072 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

-40°C ~ 100°C (TJ)

Tray

GS840Z36CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4 Mbit

SYNCHRONOUS

250 MHz

175 mA, 215 mA

5.5 ns

SRAM

Parallel

128 k x 36

3-STATE

1.6 mm

36

-

SRAM

0.045 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

3.14 V

2.7 V

2.3 V

SRAM

128K x 36

20 mm

14 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

活跃

GS8161Z18

Tray

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS8161Z18DGD

NBT

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

18 Mbit

2

333 MHz

260 mA, 305 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 18

-

20 Bit

SRAM

18 Mbit

Industrial

SRAM

1M x 18

N/A

-

BGA-119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

Bulk

GS816236DB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

230 mA, 250 mA

5.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS88118CD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

150 mA, 175 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

7 Weeks

TQFP-100

YES

100

100

NBT SRAM

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

128000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7 ns

85 °C

有

GS840Z36CGT-166I

166 MHz

131072 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.93

QFP

有

166 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

Details

Tray

GS840Z36CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4 Mbit

SYNCHRONOUS

155 mA, 180 mA

7 ns

128 k x 36

3-STATE

1.6 mm

36

SRAM

0.045 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

3.14 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8182Q36BGD-200

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.49

BGA

有

200 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA,

Tray

GS8182Q36BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

560 mA

450 ps

512 k x 36

1.4 mm

36

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0.173855 oz

- 40 C

72

-40 to 85 °C

Tray

GS88036CGT

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

150 mA, 160 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

7 Weeks, 4 Days

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

128 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

100 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

128000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

12 ns

85 °C

有

GS840Z36CGT-100I

100 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.81

QFP

Industrial grade

83.3@Flow-Through/100@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS840Z36CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4 Mbit

4

SYNCHRONOUS

130 mA, 140 mA

12 ns

Flow-Through/Pipelined

128 k x 36

3-STATE

1.6 mm

36

17 Bit

SRAM

4 Mbit

0.045 A

4718592 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

3.14 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

活跃

GS864018

Tray

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS864018GT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

QFP

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

-40 to 85 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

300 MHz

290 mA, 390 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

-

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

4M x 18

20 mm

14 mm

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

Details

SDR

GSI Technology Inc.

Tray

GS8162Z18

活跃

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8162Z18DGD-250I

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.81

BGA

有

250 MHz

+ 85 C

3.6 V

0.218543 oz

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

-40°C ~ 100°C (TJ)

Tray

GS8162Z18DGD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

250 MHz

230 mA, 250 mA

5.5 ns

SRAM

Parallel

1 M x 18

1.4 mm

18

-

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

1M x 18

15 mm

13 mm

N/A

-

表面贴装

TQFP-100

100

100-TQFP (20x14)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS880Z

活跃

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS880Z18CGT

NBT

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

9 Mbit

1

333 MHz

185 mA, 240 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 18

-

18 Bit

SRAM

9 Mbit

Industrial

SRAM

512K x 18

N/A

-

8 Weeks

YES

100

100

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS88032CGT-150I

262144 words

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.37

QFP

e3

有

3A991.B.2.B

纯哑光锡

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

4

SYNCHRONOUS

0.16 mA

256KX32

3-STATE

1.6 mm

32

18 b

9 Mb

0.045 A

8388608 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

有

GS8320Z18AGT-200I

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.85

Industrial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

-40 to 85 °C

3A991.B.2.B

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.6 mm

18

21 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

SDR

2.5, 3.3 V

2.3, 3 V

表面贴装

2.7, 3.6 V

32 Bit

256 kWords

Synchronous

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

-40 to 85 °C

GS88132CD

9 Mbit

1

160 mA, 190 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

9 Mbit

Industrial

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0.112482 oz

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

QFP,

FLATPACK

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS816118DGT-150I

2.5 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.66

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS816118DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

N/A

-

7 Weeks

BGA-119

YES

119

119

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.89

BGA

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA, BGA119,7X17,50

网格排列

256000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

7.5 ns

70 °C

有

GS842Z18CGB-150

150 MHz

262144 words

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

4 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

256 k x 18

3-STATE

1.99 mm

18

0.025 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS880Z18CGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.88

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS880Z18CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

140 mA, 150 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

Non-Compliant

70 °C

0 °C

4

18 b

9 Mb

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

167 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

3

4000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

8 ns

85 °C

无

GS8642Z18B-167I

167 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS8642Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

3-STATE

1.99 mm

18

22 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS88118CD

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

170 mA, 225 mA

5 ns

Flow-Through/Pipelined

512 k x 18

19 b

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

0.434810 oz

GSI Technology Inc.

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8640Z

活跃

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8640Z18GT-250I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.89

QFP

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS8640Z18GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

纯哑光锡

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

250 MHz

250 mA, 335 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

-

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

4M x 18

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

6.5 ns

85 °C

有

GS8320Z36AGT-200I

200 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.73

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS8320Z36AGT

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.6 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Tray

GS8662D

活跃

Industrial grade

550 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

18 Bit

4 MWords

Compliant

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D20BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II+

1.8 V

72 Mbit

2

550 MHz

990 mA

SRAM

Parallel

Pipelined

4 M x 18

-

20 Bit

SRAM

72 Mbit

Industrial

SRAM

4M x 18

无