N/A

-

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS88136BGD-200

262144 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.63

BGA

Non-Compliant

e1

3A991.B.2.B

锡银铜

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

unknown

R-PBGA-B165

不合格

COMMERCIAL

4

SYNCHRONOUS

256KX36

1.4 mm

36

18 b

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

15 mm

13 mm

无

N/A

-

YES

119

119

ROHS COMPLIANT, FPBGA-119

网格排列

3

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8162Z36BGB-200

524288 words

2.5 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.59

BGA

Compliant

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

4

SYNCHRONOUS

512KX36

1.99 mm

36

19 b

18 Mb

18874368 bit

PARALLEL

ZBT SRAM

2.75 V

2.25 V

22 mm

14 mm

无

N/A

-

YES

119

119

BGA, BGA119,7X17,50

网格排列

3

128000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

8.5 ns

70 °C

无

GS84036AB-166

166 MHz

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.73

BGA

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.31 mA

128KX36

3-STATE

2.19 mm

36

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

22 mm

14 mm

N/A

-

BGA-260

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Bulk

GS8673ED18BK

SigmaQuad-IIIe B4

Memory & Data Storage

1.35 V

72 Mbit

2.11 A

1.25 Gb/s

4 M x 18

22 b

SRAM

72 Mb

SRAM

无

N/A

-

YES

100

100

GSI TECHNOLOGY

5.77

QFP

Non-Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

8 ns

85 °C

无

GS832036T-166I

166 MHz

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

SYNCHRONOUS

0.19 mA

1MX36

3-STATE

1.6 mm

36

0.08 A

37748736 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

Compliant

70 °C

0 °C

1

20 b

36 Mb

无

N/A

-

N/A

-

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS816236BGD-150

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.56

BGA

Compliant

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

unknown

R-PBGA-B165

不合格

COMMERCIAL

4

SYNCHRONOUS

512KX36

1.4 mm

36

19 b

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342R08BD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

250 MHz

FBGA

0 to 85 °C

Bulk

GS8342R08BD

e0

3A991.B.2.B

SigmaDDR-II B4

Tin/Lead (Sn/Pb)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

395 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.175 A

33554432 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS816236DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5 ns

512 k x 36

SRAM

SRAM

N/A

-

YES

165

165

13 X 15 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8162Z36BD-200I

524288 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.63

BGA

Compliant

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

4

SYNCHRONOUS

512KX36

1.4 mm

36

19 b

18 Mb

18874368 bit

PARALLEL

ZBT SRAM

2.75 V

2.25 V

15 mm

13 mm

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 70 °C

Tray

GS8640Z18GT

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

2

230 mA, 315 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

Compliant

70 °C

0 °C

1.35 V

72 Mb

无

N/A

-

12 Weeks

BGA-260

YES

260

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8673EQ36BK-550S

2097152 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

Compliant

有

550 MHz

+ 85 C

1.4 V

QDR-III

SigmaQuad-IIIe

GSI技术

GSI技术

Parallel

SMD/SMT

1.3 V

8

0 C

HBGA,

Tray

GS8673EQ36BK

3A991.B.2.B

SigmaQuad-IIIe B2

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.67 A

2 M x 36

2.3 mm

36

20 b

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

12 Weeks

BGA-260

YES

260

85 °C

无

GS8673ED18BK-625S

4194304 words

1.35 V

BGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

PLASTIC/EPOXY

4000000

网格排列

BGA,

Compliant

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

未说明

Tray

GS8673ED18BK

3A991.B.2.B

SigmaQuad-IIIe B4

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.11 A

1.25 Gb/s

4 M x 18

2.3 mm

18

20 b

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

6 Weeks

YES

44

44

0.400 INCH, ROHS COMPLIANT, TSOP2-44

SMALL OUTLINE, THIN PROFILE

3

128000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS72116AGP-7I

131072 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

TSOP2

Compliant

有

3A991.B.2.B

Pure Matte Tin (Sn)

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX16

1.2 mm

16

17 b

2 Mb

2097152 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

无

N/A

-

12 Weeks

BGA-260

YES

260

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8673EQ18BK-625S

4194304 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.78

Compliant

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

QDR-III

HBGA,

Tray

GS8673EQ18BK

3A991.B.2.B

SigmaQuad-IIIe B2

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.11 A

4 M x 18

2.3 mm

18

21 b

SRAM

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

无

N/A

-

Compliant

Tape & Reel

85 °C

-40 °C

4

20 b

36 Mb

无

N/A

-

YES

44

44

128000

PLASTIC/EPOXY

未说明

7 ns

70 °C

无

GS72116ATP-7

TSOP2

8.66

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

TSOP2

3.3 V

131072 words

TSOP2,

SMALL OUTLINE, THIN PROFILE

3

e0

3A991.B.2.B

锡铅

8542.32.00.41

CMOS

DUAL

鸥翼

未说明

1

0.8 mm

compliant

R-PDSO-G44

不合格

COMMERCIAL

ASYNCHRONOUS

128KX16

1.2 mm

16

2097152 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

YES

165

165

BGA

15 X 17 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

8.5 ns

85 °C

有

GS8321Z36GE-133I

133 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

8.41

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

SYNCHRONOUS

0.21 mA

1MX36

3-STATE

1.5 mm

36

0.08 A

37748736 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

17 mm

15 mm

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

21 b

72 Mb

无

N/A

-

BGA-260

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

有

550 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

Tray

GS8673ED18BK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

1.93 A

1.1 Gb/s

4 M x 18

SRAM

SRAM

N/A

-

Non-Compliant

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

18 b

24 b

576 Mb

400 MHz

无