N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS882Z18CGD

NBT

Memory & Data Storage

9 Mbit

2

125 mA, 135 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302S18GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

有

400 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

4 ns

70 °C

有

GS816036DGT-400

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

250@Flow-Through/400@Pipelined MHz

表面贴装

2.7, 3.6 V

36 Bit

0 to 85 °C

Tray

GS816036DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662D37BD-400

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.45

BGA

1.9 V

36 Bit

Synchronous

1.7 V

1.8000 V

400 MHz

有

400 MHz

0 to 85 °C

Tray

GS8662D37BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Lead (Sn/Pb)

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

940 mA

0.45

2 M x 36

1.4 mm

36

19 Bit

SRAM

72

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS88236CD

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662QT37BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

750 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T07BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

495 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

85 °C

有

GS832118AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS832118AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

18874368 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q36BD-200I

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

BGA

5.34

Industrial grade

200 MHz

FPBGA

-40 to 85 °C

Tray

GS8662Q36BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

750 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662T18BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

435 mA

Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SDR

Industrial grade

250 MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

-40 to 85 °C

Tray

GS88018CGT

同步突发

Memory & Data Storage

9 Mbit

145 mA, 185 mA

5.5@Flow-Through/3@P

512 k x 18

19 Bit

SRAM

9

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

0 to 70 °C

Tray

GS864436E

同步突发

Memory & Data Storage

72 Mbit

4

245 mA, 295 mA

8.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302QT07GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

2000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS864236B-250V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 70 °C

Tray

GS864236B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

400 MHz

1.8000 V

1.7 V

18 Bit

1.9 V

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

0 to 85 °C

Tray

GS8662TT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

625 mA

0.45

4 M x 18

SRAM

72

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200 MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS8128418GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

144 Mbit

2

325 mA, 400 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

165

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

表面贴装

1.9 V

9 Bit

Industrial grade

-40 to 100 °C

2

Pipelined

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 100 °C

Tray

GS8322Z18AGD

NBT

Memory & Data Storage

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D10GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662R36BD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

800 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T09E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

36 Bit

2, 2.7 V

表面贴装

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

2.5 ns

70 °C

有

GS88037CGT-250V

250 MHz

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

250 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

0 to 70 °C

GS88037CGT

e3

有

3A991.B.2.B

纯哑光锡

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

195 mA

Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

36 Bit

1.9 V

DDR

Details

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

+ 70 C

400 MHz

有

Commercial grade

0 to 85 °C

Tray

GS8662T36BGD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

800 mA

0.45

2 M x 36

SRAM

72

Commercial

SRAM

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

300 MHz

BGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

-40 to 85 °C

Tray

GS816273CGC

Pipeline

Memory & Data Storage

18 Mbit

8

425 mA

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662D10BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM