品牌是'GSI' (10000)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

包装/外壳

表面安装

引脚数

终端数量

操作温度

包装

系列

JESD-609代码

无铅代码

ECCN 代码

类型

端子表面处理

附加功能

HTS代码

子类别

技术

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

JESD-30代码

资历状况

电源

温度等级

内存大小

端口的数量

操作模式

电源电流-最大值

访问时间

建筑学

组织结构

输出特性

座位高度-最大

内存宽度

地址总线宽度

产品类别

密度

待机电流-最大值

记忆密度

筛选水平

并行/串行

I/O类型

内存IC类型

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

产品类别

长度

宽度

GS8662D19BD-300
GS8662D19BD-300
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662D19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

580 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8662D19BGD-333
GS8662D19BGD-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

0 to 85 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

630 mA

0.45

4 M x 18

SRAM

72

SRAM

GS8342D19BD-350I
GS8342D19BD-350I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

- 40 C

1.9 V

+ 85 C

350 MHz

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

-40 to 100 °C

Tray

GS8342D19BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

GS881Z36CD-200
GS881Z36CD-200
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

GS881Z36CD-200

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Tray

GS881Z36CD

e0

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

not_compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.6 mm

36

SRAM

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

GS81302T06GE-400
GS81302T06GE-400
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T06GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

895 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

GS8128418B-167V
GS8128418B-167V
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

GS8128418B-167V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

167 MHz

FBGA

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS8128418B

e0

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

GS8662D19BGD-400
GS8662D19BGD-400
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

FBGA

QDR

0 to 85 °C

GS8662D19BGD

72 Mbit

2

735 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Commercial

GS8662DT06BD-400
GS8662DT06BD-400
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8662D09BD-350
GS8662D09BD-350
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

GS8662D09BD-350

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

350 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8662D09BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

0.695 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

72 Mbit

0.25 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

GS882Z18CGD-250IV
GS882Z18CGD-250IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS882Z18CGD

NBT

Memory & Data Storage

9 Mbit

2

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS8662D19BGD-400I
GS8662D19BGD-400I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

18 Bit

1.9 V

1.9 V

+ 85 C

400 MHz

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

-40 to 100 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

745 mA

0.45

4 M x 18

SRAM

72

SRAM

GS8342TT06BD-550I
GS8342TT06BD-550I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342TT06BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

810 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8640FZ18GT-5.5I
GS8640FZ18GT-5.5I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

TQFP-100

YES

100

100

3.3000 V

3 V

Synchronous

4 MWords

18 Bit

3.6 V

表面贴装

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

GS8640FZ18GT-5.5I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.62

QFP

Industrial grade

181.8 MHz

TQFP

SDR

-40 to 85 °C

Tray

GS8640FZ18GT

e3

3A991.B.2.B

NBT Flow Through

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

290 mA

5.5 ns

Flow-Through

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

SRAM

20 mm

14 mm

GS88136CD-200V
GS88136CD-200V
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

YES

165

165

GS88136CD-200V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

LQFP,

网格排列

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

0 to 70 °C

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Flow-Through/Pipelined

256KX36

1.4 mm

36

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

GS8662DT38BD-400I
GS8662DT38BD-400I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

SMD/SMT

1.7 V

15

- 40 C

1.9 V

+ 85 C

400 MHz

-40 to 100 °C

Tray

GS8662DT38BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

GS8342D37BD-350I
GS8342D37BD-350I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D37BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

860 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

GS8662D19BGD-333I
GS8662D19BGD-333I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

640 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

GS88218CD-250V
GS88218CD-250V
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

9 Mbit

2

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

GS8256436GB-200IV
GS8256436GB-200IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-119

YES

119

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.68

Details

200 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

SDR

10

SyncBurst

2.7 V

BGA,

网格排列

8000000

PLASTIC/EPOXY

GS8256436GB-200IV

8388608 words

1.8 V

Tray

GS8256436GB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 V TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

288 Mbit

SYNCHRONOUS

460 mA, 510 mA

6.5 ns

8 M x 36

1.99 mm

36

301989888 bit

PARALLEL

缓存SRAM

2 V

1.7 V

22 mm

14 mm

GS816273CGC-333
GS816273CGC-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-209

209

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

Commercial grade

333 MHz

BGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

333 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 70 °C

Tray

GS816273CGC

Pipeline

Memory & Data Storage

18 Mbit

8

460 mA

4.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

GS8662D09BD-400I
GS8662D09BD-400I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

GS8662D09BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

400 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8662D09BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

745 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

72 Mbit

0.27 A

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

GS8342QT37BD-357
GS8342QT37BD-357
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT37BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

1.095 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mb

Commercial

SRAM

GS8162Z72CC-250IV
GS8162Z72CC-250IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-209

YES

209

209

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

GS8162Z72CC-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

BGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8162Z72CC

3A991.B.2.B

NBT

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

INDUSTRIAL

18 Mbit

8

SYNCHRONOUS

275 mA, 360 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

GS816132DD-375
GS816132DD-375
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS816132DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

GS882Z36CGB-250IV
GS882Z36CGB-250IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

42

1.7 V

-40 to 85 °C

Tray

GS882Z36CGB

NBT

Memory & Data Storage

9 Mbit

4

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM