N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D37BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

860 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

165

165

70 °C

无

GS8182T08BD-375

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.32

BGA

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX8

1.4 mm

8

20 Bit

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SigmaQuad-II+

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

18 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662D19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

580 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

0 to 85 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

630 mA

0.45

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

165

- 40 C

1.9 V

+ 85 C

350 MHz

有

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

-40 to 100 °C

Tray

GS8342D19BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS881Z36CD-200

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Tray

GS881Z36CD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

not_compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.6 mm

36

SRAM

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

640 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

9 Mbit

2

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T06GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

895 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS8128418B-167V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

167 MHz

FBGA

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS8128418B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

FBGA

QDR

0 to 85 °C

GS8662D19BGD

72 Mbit

2

735 mA

Pipelined

4 M x 18

20 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

735 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8662D09BD-350

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

350 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8662D09BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

0.695 mA

Pipelined

8 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

72 Mbit

0.25 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS882Z18CGD

NBT

Memory & Data Storage

9 Mbit

2

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

18 Bit

1.9 V

1.9 V

+ 85 C

400 MHz

有

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

-40 to 100 °C

Tray

GS8662D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

745 mA

0.45

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-119

YES

119

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.68

Details

200 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

SyncBurst

2.7 V

BGA,

网格排列

8000000

PLASTIC/EPOXY

GS8256436GB-200IV

8388608 words

1.8 V

Tray

GS8256436GB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 V TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

R-PBGA-B119

288 Mbit

SYNCHRONOUS

460 mA, 510 mA

6.5 ns

8 M x 36

1.99 mm

36

301989888 bit

PARALLEL

缓存SRAM

2 V

1.7 V

22 mm

14 mm

N/A

-

BGA-165

165

1.9 V

Industrial grade

333 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

DDR

有

15

SigmaQuad-II+

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

-40 to 100 °C

Tray

GS8662Q10BD

SigmaQuad-II+ B2

72 Mbit

2

930 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

375 MHz

Parallel

1.7 V

- 55 C

+ 125 C

SMD/SMT

DDR

有

18

SigmaQuad-II

375 MHz

FBGA

QDR

1.8000 V

Synchronous

512 kWords

36 Bit

表面贴装

Compliant

1.9 V

Military grade

-55 to 125 °C

Tray

GS8182Q36BD

SigmaQuad-II

125 °C

-55 °C

1.8 V

18 Mbit

2

Pipelined

512 k x 36

18 Bit

18 Mbit

Military

无

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 70 °C

Tray

GS8162Z72CGC

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

265 mA, 350 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

85 °C

无

GS8321E36AD-333

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

222@Flow-Through/333@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8321E36AD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8321E32AD

同步突发

Memory & Data Storage

36 Mbit

4

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z18GE-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS8644Z18GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

1.5 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

SMD/SMT

1.7 V

15

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662T20BD-500I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.43

BGA

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Tray

GS8662T20BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

770 mA

Pipelined

4 M x 18

1.4 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302T07GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM