N/A

-

BGA-165

165

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

300 MHz

+ 70 C

1.9 V

0 to 85 °C

144 Mbit

815 mA

0.45

16 M x 9

144

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Military grade

153@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

0.445040 oz

- 55 C

36

2.3 V

-55 to 125 °C

Tray

GS816236DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

255 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

7.5 ns

85 °C

无

GS8321Z36AD-150IV

150 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS8321Z36AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

220 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

0 C

3.6 V

+ 70 C

375 MHz

有

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4.2 ns

70 °C

有

GS8322Z18AGB-375

375 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 85 °C

Tray

GS8322Z18AGB

3A991.B.2.B

NBT Pipeline/Flow Through

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

,

有

GS8161E18DGT-400I

活跃

GSI TECHNOLOGY

5.8

Industrial grade

400 MHz

TQFP

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

-40 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

compliant

18 Mbit

275 mA, 355 mA

4

1 M x 18

SRAM

18

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662TT10BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

N

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

0 to 85 °C

Tray

GS81302DT10E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

940 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8640E32GT

DCD

Memory & Data Storage

72 Mbit

4

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

15

0 C

1.9 V

+ 70 C

300 MHz

有

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

QDR-II

N

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

0 to 85 °C

Tray

GS8662QT19BD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

850 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

256000

PLASTIC/EPOXY

未说明

70 °C

有

GS88132CGD-150

262144 words

3.3 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS88132CGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

256 k x 36

1.4 mm

32

SRAM

8388608 bit

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662TT11BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

770 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8662Q09BD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

995 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302DT37GE-333

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

1 A

0.45

4 M x 36

1.5 mm

36

144

PARALLEL

QDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

1.7 V

Synchronous

9 Bit

1.9 V

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

QDR-II

Military grade

450 MHz

1.8000 V

-55 to 125 °C

Tray

SigmaQuad-II+

Memory & Data Storage

144 Mbit

0.45

16 M x 9

SRAM

144

Military

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8342Q36BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

1.155 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

SyncBurst

Details

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS8161E32DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 32

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Details

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS816036DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8162Z72CGC-150V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

BGA

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS8162Z72CGC

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

18 Mbit

8

SYNCHRONOUS

210 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4 ns

70 °C

有

GS8322Z36AGD-400

400 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2, 2.7 V

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

7.5 ns

85 °C

无

GS832236AD-150IV

150 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

133@Flow-Through/150@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

-40 to 100 °C

Tray

GS832236AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

220 mA, 230 mA

7.5@Flow-Through/3.8

1 M x 36

3-STATE

1.4 mm

36

SRAM

0.04 A

36

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

YES

165

165

BGA165,11X15,40

-55 °C

0.45 ns

125 °C

无

GS8342Q18AE-250M

250 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.76

BGA

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

3A991.B.2.B

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1 mm

unknown

R-PBGA-B165

不合格

1.5/1.8,1.8 V

MILITARY

SYNCHRONOUS

0.8 mA

2MX18

3-STATE

1.5 mm

18

0.3 A

36

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

Parallel

GSI技术

DDR

Details

SigmaQuad-II+

GSI技术

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342Q07BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

945 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS88036CGT-200V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

Commercial grade

200 MHz

TQFP

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS88036CGT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

167 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

3

4000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS864218B-167

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

0 to 70 °C

GS864218B

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.99 mm

18

22 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS8160E32DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM