N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302T06E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

800 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS881Z18CD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 70 °C

Tray

GS881Z18CD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

115 mA, 140 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.4 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

142.8@Flow-Through/166@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Tray

GS8644Z18GE

NBT

Memory & Data Storage

72 Mbit

2

260 mA, 320 mA

8 ns

Flow-Through/Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

250 MHz

表面贴装

1.9 V

36 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

有

250 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302D36E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

790 mA

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

1

Pipelined

22 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS81302DT07E

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

890 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

8 MWords

9 Bit

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662D11BD-450M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

Military grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

Tray

GS8662D11BD

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

MILITARY

72 Mbit

SYNCHRONOUS

Pipelined

8 M x 9

1.4 mm

9

23 Bit

SRAM

72 Mbit

75497472 bit

Military

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302DT10GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

200 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200 MHz

0 to 85 °C

GS81302Q37E

144 Mbit

2

930 mA

Pipelined

4 M x 36

21 Bit

144 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

-40 to 85 °C

Tray

GS88118CD

同步突发

Memory & Data Storage

9 Mbit

1

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

0 to 70 °C

Tray

GS8161Z36DD

NBT

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302T10GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

690 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200@Flow-Through/300@Pipelined MHz

-40 to 85 °C

GS881E32CD

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

8 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 100 °C

Tray

GS832218AD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

205 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

117.6@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

14

-40 to 85 °C

Tray

GS832272C

同步突发

Memory & Data Storage

36 Mbit

8

220 mA, 280 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

0 to 70 °C

Tray

GS8642Z72C

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

285 mA, 385 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662QT37BD-300M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

Military grade

300 MHz

FBGA

QDR

-55 to 125 °C

Tray

GS8662QT37BD

3A991.B.2.B

SigmaQuad-II+ B2

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

MILITARY

72 Mbit

2

SYNCHRONOUS

Pipelined

2 M x 36

1.4 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Military

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

165

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302R36GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

860 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

100

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

,

有

GS8320E36AGT-333IV

活跃

GSI TECHNOLOGY

5.8

Industrial grade

333 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

-40 to 85 °C

Tray

GS8320E36AGT

DCD Synchronous Burst

Memory & Data Storage

compliant

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

119

119

网格排列

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

8.5 ns

85 °C

无

GS864436B-133I

2097152 words

2.5 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

BGA

BGA,

e0

无

3A991.B.2.B

锡铅

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

2MX36

1.99 mm

36

75497472 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

-40 to 100 °C

Tray

GS8662DT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

9 Bit

1.9 V

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662D11BGD-450

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.5

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

0 to 85 °C

GS8662D11BGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

820 mA

Pipelined

8 M x 9

1.4 mm

9

21 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

165

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

1

Pipelined

21 Bit

144 Mbit

Commercial

N/A

-

TQFP-100

100

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM