N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81314LD36GK-106

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

Tray

GS81314LD36GK

3A991.B.2.B

SigmaQuad-IVe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

3 A

4 M x 36 bit

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

PLASTIC/EPOXY

TQFP100,.4X.6,26

4 ns

85 °C

GS8128018GT-400

400 MHz

8388608 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

400 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP, TQFP100,.4X.6,26

FLATPACK, LOW PROFILE

8000000

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

1

SYNCHRONOUS

430 mA, 610 mA

4 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

20 mm

14 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81313LQ36GK-714

4194304 words

1.25 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

714 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

Tray

GS81313LQ36GK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.35 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

未说明

85 °C

有

GS8128036GT-200V

4194304 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.71

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

Tray

GS8128036GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS84018CGT-150

262144 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.66

SyncBurst

72

有

SDR

SMD/SMT

+ 70 C

0 C

2.3 V

Parallel

150 MHz

Details

3.6 V

LQFP,

FLATPACK, LOW PROFILE

3

Tray

GS84018CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

4 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

256 k x 18

1.6 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

20 mm

14 mm

N/A

-

表面贴装

TQFP-100

YES

100-TQFP (20x14)

100

GSI Technology Inc.

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

TQFP100,.4X.6,26

5.5 ns

GS8128036GT-250I

250 MHz

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.24

SyncBurst

15

有

SDR

SMD/SMT

+ 100 C

- 40 C

2.3 V

Parallel

250 MHz

Details

3.6 V

Tray

GS8128036

活跃

LQFP, TQFP100,.4X.6,26

-40°C ~ 100°C (TJ)

Tray

GS8128036GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

144 Mbit

1

SYNCHRONOUS

250 MHz

375 mA, 490 mA

5.5 ns

SRAM

Parallel

4 M x 36

1.6 mm

36

-

150994944 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

4M x 36

20 mm

14 mm

N/A

-

TQFP-100

YES

100

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

有

GS81280E36GT-200I

Tray

GS81280E36GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

144 Mbit

SYNCHRONOUS

350 mA, 420 mA

6.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

有

GS81280E18GT-200

8388608 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

Details

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

Tray

GS81280E18GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

295 mA, 360 mA

6.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-260

YES

260

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.78

800 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

QDR-IVe

有

10

Details

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

GS81314LQ19GK-800I

8388608 words

1.2 V

Tray

GS81314LQ19GK

3A991.B.2.B

SigmaQuad-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

2.05 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81314LQ36GK-106

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

Tray

GS81314LQ36GK

3A991.B.2.B

SigmaQuad-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

3 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

PLASTIC/EPOXY

TQFP100,.4X.6,26

4.5 ns

85 °C

GS8128036GT-333

333 MHz

5.71

GSI TECHNOLOGY

活跃

RECTANGULAR

LQFP

2.5 V

4194304 words

Details

333 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP, TQFP100,.4X.6,26

FLATPACK, LOW PROFILE

4000000

Tray

GS8128036GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

1

SYNCHRONOUS

435 mA, 600 mA

4.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

20 mm

14 mm

N/A

-

TQFP-100

YES

100

256000

PLASTIC/EPOXY

未说明

7 ns

70 °C

有

GS84018CGT-166

262144 words

3.3 V

5.66

GSI TECHNOLOGY

活跃

RECTANGULAR

LQFP

SyncBurst

Details

166 MHz

Parallel

2.3 V

0 C

+ 70 C

SMD/SMT

SDR

有

72

3.6 V

LQFP,

FLATPACK, LOW PROFILE

3

Tray

GS84018CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

4 Mbit

SYNCHRONOUS

125 mA, 150 mA

7 ns

256 k x 18

1.6 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

有

GS81280E32GT-250

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

250 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

SyncBurst

15

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

Tray

GS81280E32GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

380 mA, 470 mA

5.5 ns

4 M x 32

1.6 mm

32

134217728 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

有

GS81280E18GT-250

8388608 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

250 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

Tray

GS81280E18GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

360 mA, 430 mA

5.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS84018CGT-200

262144 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.66

SyncBurst

72

有

SDR

SMD/SMT

+ 70 C

0 C

2.3 V

Parallel

200 MHz

Details

3.6 V

LQFP,

FLATPACK, LOW PROFILE

3

Tray

GS84018CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

4 Mbit

SYNCHRONOUS

130 mA, 155 mA

6.5 ns

256 k x 18

1.6 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 100 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS816018DGT-250IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

QFP

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

-40 to 100 °C

Tray

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

21 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

GSI TECHNOLOGY

5.77

675 MHz

+ 85 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

85 °C

有

GS82582D39GE-675S

8388608 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GS82582D39GE

3A991.B.2.B

Female

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

Socket

OTHER

288 Mbit

SYNCHRONOUS

1.55 A

8 M x 36

1.5 mm

36

301989888 bit

PARALLEL

缓存SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

YES

165

RECTANGULAR

LBGA

1.8 V

8388608 words

GS81302DT20AGD-500I

100 °C

0.45 ns

-40 °C

PLASTIC/EPOXY

8000000

GRID ARRAY, LOW PROFILE

1.7 V

- 40 C

+ 100 C

SMD/SMT

QDR

有

10

SigmaQuad-II+

Details

500 MHz

Parallel

1.9 V

LBGA,

5.75

GSI TECHNOLOGY

活跃

GS81302DT20AGD

SigmaQuad-II+

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

144 Mbit

SYNCHRONOUS

940 mA

8 M x 18

1.4 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

YES

165

85 °C

GS81302DT20AGD-450

8388608 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

450 MHz

Parallel

1.7 V

0 C

+ 85 C

SMD/SMT

QDR

有

10

SigmaQuad-II+

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

0.45 ns

GS81302DT20AGD

SigmaQuad-II+

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

OTHER

144 Mbit

SYNCHRONOUS

850 mA

8 M x 18

1.4 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81313LD36GK-625

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

625 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

Tray

GS81313LD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.1 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.3 V

1.15 V

22 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

85 °C

有

GS81314LD36GK-133

4194304 words

1.25 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

1.333 GHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

Tray

GS81314LD36GK

3A991.B.2.B

SigmaQuad-IVe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

3.4 A

4 M x 36 bit

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

4194304 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

GS8128032GT-200V

Tray

GS8128032GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 32

1.6 mm

32

134217728 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

YES

165

未说明

0.45 ns

有

GS82582TT20GE-550I

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.59

Details

550 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

DDR

有

10

SigmaDDR-II+

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

Tray

GS82582TT20GE

3A991.B.2.B

SigmaDDR-II+

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

288 Mbit

SYNCHRONOUS

1 A

16 M x 18

1.5 mm

18

301989888 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

TQFP-100

YES

100

8388608 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

SyncBurst

15

有

SDR

SMD/SMT

+ 85 C

0 C

2.3 V

Parallel

333 MHz

Details

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

GS8128018GT-333V

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

400 mA, 530 mA

4.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81314LT36GK-106

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-IVe

有

10

SigmaDDR-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

Tray

GS81314LT36GK

3A991.B.2.B

SigmaDDR-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.4 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.15 V

22 mm

14 mm