品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

70V9369L9PF
70V9369L9PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

225mA

83MHz

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

-40°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.65mm

40MHz

20

COMMERCIAL

Parallel

36kB

2

9 ns

16KX18

3-STATE

28b

288 kb

0.005A

COMMON

Synchronous

18b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3558SA100BG
IDT71V3558SA100BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

100MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

256KX18

3-STATE

18

0.04A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

709369L12PF
709369L12PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

355mA

RAM, SRAM

2010

活跃

70°C

0°C

5V

33.3MHz

Parallel

2

25 ns

28b

288 kb

Synchronous

18b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

7140SA55J8
7140SA55J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

155mA

RAM, SDR, SRAM

2013

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

1kB

2

55 ns

1KX8

3-STATE

10b

8 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71V124SA12Y8
IDT71V124SA12Y8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

COMMERCIAL

Parallel

0.13mA

128KX8

3-STATE

8

0.01A

1048576 bit

12 ns

COMMON

3V

3.6V

3V

3.683mm

20.955mm

10.16mm

Non-RoHS Compliant

71V67603S166BQ
71V67603S166BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

165

340mA

166MHz

RAM, SDR, SRAM

2009

活跃

70°C

0°C

3.3V

166MHz

Parallel

1.1MB

1

3.5 ns

18b

9 Mb

Synchronous

36b

3.465V

3.135V

15mm

13mm

1.2mm

符合RoHS标准

含铅

IDT71V65703S80PFI8
IDT71V65703S80PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

95MHz

0.06mA

256KX36

3-STATE

36

0.06A

9437184 bit

8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V256SA12YI
IDT71V256SA12YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

2010

e0

28

EAR99

锡铅

85°C

-40°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

30

不合格

INDUSTRIAL

Parallel

32KX8

8

262144 bit

12 ns

3.6V

3V

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

7027S25PFI8
7027S25PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

345mA

RAM, SDR, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

INDUSTRIAL

Parallel

64kB

2

25 ns

3-STATE

15b

512 kb

0.03A

COMMON

Asynchronous

16b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V9179L9PF
70V9179L9PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

260mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

40MHz

20

COMMERCIAL

Parallel

36kB

2

9 ns

3-STATE

15b

288 kb

0.003A

COMMON

Synchronous

9b

3V

3.6V

3V

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71256SA15YI8
IDT71256SA15YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

no

28

EAR99

锡铅

85°C

-40°C

8542.32.00.41

5V

DUAL

J BEND

225

1

1.27mm

30

不合格

INDUSTRIAL

Parallel

1

32KX8

3-STATE

8

262144 bit

15 ns

5.5V

4.5V

YES

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

IDT71V2558S200PF
IDT71V2558S200PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

200MHz

20

R-PQFP-G100

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.4mA

256KX18

3-STATE

18

0.04A

4718592 bit

3.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V657S12DR
70V657S12DR
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PQFP

208

465mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn/Pb)

70°C

0°C

3.3V

QUAD

鸥翼

225

1

0.5mm

20

COMMERCIAL

Parallel

128kB

2

12 ns

3-STATE

30b

1.1 Mb

0.015A

COMMON

Asynchronous

36b

3.45V

3.15V

4.1mm

28mm

28mm

3.5mm

符合RoHS标准

含铅

71321SA25TF8
71321SA25TF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

220mA

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

2kB

2

25 ns

3-STATE

11b

16 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

10mm

10mm

1.4mm

符合RoHS标准

含铅

70V7339S133BC8
70V7339S133BC8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

645mA

RAM, SDR, SRAM

2010

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

BOTTOM

BALL

225

1

1mm

133MHz

COMMERCIAL

Parallel

1.1MB

2

25 ns

3-STATE

38b

9 Mb

0.03A

COMMON

Synchronous

18b

3.45V

3.15V

1.5mm

17mm

17mm

1.4mm

符合RoHS标准

含铅

71V3556SA166BQG8
71V3556SA166BQG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

11 Weeks

表面贴装

165

350mA

RAM, SRAM

Tape & Reel

2015

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

3.3V

BOTTOM

BALL

260

1

166MHz

COMMERCIAL

Parallel

1

3.5 ns

17b

4.5 Mb

Synchronous

36b

3.465V

3.135V

15mm

13mm

1.2mm

符合RoHS标准

无铅

70V3379S4PRF
70V3379S4PRF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

460mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

128

Tin/Lead (Sn85Pb15)

70°C

0°C

PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE

3.3V

QUAD

鸥翼

225

1

0.5mm

133MHz

COMMERCIAL

Parallel

72kB

2

4.2 ns

3-STATE

30b

576 kb

0.015A

COMMON

Synchronous

18b

3.45V

3.15V

20mm

14mm

1.4mm

符合RoHS标准

含铅

7024L20G
7024L20G
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

NO

84

RAM, SDR, SRAM

2000

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn/Pb)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

5V

PERPENDICULAR

PIN/PEG

240

1

20

5V

COMMERCIAL

Parallel

8kB

2

20 ns

4KX16

3-STATE

24b

64 kb

0.0015A

COMMON

2V

5.5V

4.5V

27.94mm

27.94mm

3.68mm

符合RoHS标准

含铅

7130LA55P
7130LA55P
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

PDIP

48

110mA

RAM, SDR, SRAM

Bulk

2013

e0

no

Discontinued

1 (Unlimited)

48

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

DUAL

245

1

5V

COMMERCIAL

Parallel

1kB

2

55 ns

1KX8

3-STATE

20b

8 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

5.08mm

61.7mm

15.24mm

3.8mm

符合RoHS标准

含铅

IDT71V416YS10PH
IDT71V416YS10PH
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

RAM, SRAM - Asynchronous

2008

e0

3 (168 Hours)

44

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

DUAL

鸥翼

0.8mm

not_compliant

R-PDSO-G44

不合格

3.3V

COMMERCIAL

Parallel

0.2mA

256KX16

3-STATE

16

0.02A

4194304 bit

10 ns

COMMON

3V

Non-RoHS Compliant

70V07S25PF
70V07S25PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

170mA

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.65mm

20

不合格

COMMERCIAL

Parallel

32kB

2

25 ns

3-STATE

30b

256 kb

0.006A

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V9359L7PF8
70V9359L7PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

280mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

45.45MHz

20

COMMERCIAL

Parallel

18kB

2

7 ns

8KX18

3-STATE

26b

144 kb

0.003A

COMMON

Synchronous

18b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V05S25PF8
70V05S25PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

190mA

RAM, SDR, SRAM

2006

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.8mm

20

COMMERCIAL

Parallel

8kB

2

25 ns

8KX8

3-STATE

13b

64 kb

0.005A

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7132SA25J
7132SA25J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

220mA

RAM, SDR, SRAM

2007

活跃

70°C

0°C

5V

Parallel

2kB

2

25 ns

22b

16 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

70V658S15BC8
70V658S15BC8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

440mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

BOTTOM

BALL

225

1

1mm

COMMERCIAL

Parallel

2

15 ns

64KX36

3-STATE

32b

2.3 Mb

0.015A

COMMON

Asynchronous

36b

3.45V

3.15V

1.5mm

17mm

17mm

1.4mm

符合RoHS标准

含铅