品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

70V07S55PF8
70V07S55PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

140mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.65mm

20

COMMERCIAL

Parallel

2

55 ns

3-STATE

30b

256 kb

0.006A

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V25761SA166BGI8
IDT71V25761SA166BGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

1

1.27mm

not_compliant

166MHz

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.33mA

128KX36

3-STATE

36

0.035A

4718592 bit

3.5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

7024L20J
7024L20J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

240mA

RAM, SDR, SRAM

2000

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

8kB

2

20 ns

4KX16

3-STATE

24b

64 kb

0.0015A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

4.57mm

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

IDT71V3559SA75BG8
IDT71V3559SA75BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

256KX18

3-STATE

18

0.04A

4718592 bit

7.5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

7008L20PF8
7008L20PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

285mA

RAM, SDR, SRAM

2010

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

64kB

2

20 ns

64KX8

3-STATE

32b

512 kb

0.005A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

71V3577S85PFGI8
71V3577S85PFGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

TQFP

100

190mA

87MHz

RAM, SDR, SRAM

2005

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

85°C

-40°C

流线型结构

3.3V

QUAD

鸥翼

260

1

0.65mm

87MHz

INDUSTRIAL

Parallel

512kB

1

8.5 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

14mm

1.4mm

符合RoHS标准

无铅

71342LA35PF8
71342LA35PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

200mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

4kB

2

35 ns

4KX8

3-STATE

24b

32 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V2558S100PF8
IDT71V2558S100PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.25mA

128KX36

3-STATE

36

0.04A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT70P27L12PFG
IDT70P27L12PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

RAM, SRAM

2009

e3

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

1.8V

QUAD

鸥翼

0.5mm

unknown

S-PQFP-G100

不合格

1.8V

COMMERCIAL

Parallel

2

ASYNCHRONOUS

0.23mA

32KX16

3-STATE

16

0.005A

524288 bit

12 ns

COMMON

1.7V

符合RoHS标准

7006S20PF8
7006S20PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

290mA

RAM, SDR, SRAM

2008

活跃

70°C

0°C

5V

Parallel

16kB

2

20 ns

14b

128 kb

Asynchronous

8b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3556S133PFI8
IDT71V3556S133PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

133MHz

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.31mA

128KX36

3-STATE

36

0.045A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V65603S150PFI8
IDT71V65603S150PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2015

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.345mA

256KX36

3-STATE

36

0.06A

9437184 bit

3.8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V124SA10TYGI
IDT71V124SA10TYGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

32

150mA

RAM, SRAM - Asynchronous

Rail/Tube

2007

e3

3 (168 Hours)

32

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

J BEND

260

1

30

不合格

INDUSTRIAL

Parallel

1

10 ns

3-STATE

8

17b

1 Mb

COMMON

Asynchronous

8b

3.6V

3.15V

3.7592mm

20.955mm

符合RoHS标准

709359L6PF
709359L6PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

430mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

5V

QUAD

鸥翼

240

1

0.5mm

52.6MHz

20

5V

COMMERCIAL

Parallel

18kB

2

6.5 ns

8KX18

3-STATE

26b

144 kb

0.003A

COMMON

Synchronous

18b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT7164L20Y8
IDT7164L20Y8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2009

e0

3 (168 Hours)

28

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

5V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

5V

COMMERCIAL

Parallel

1

0.15mA

8KX8

3-STATE

8

0.00006A

65536 bit

19 ns

COMMON

2V

5.5V

4.5V

YES

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

70V657S15BC
70V657S15BC
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

440mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

BOTTOM

BALL

225

1

1mm

COMMERCIAL

Parallel

128kB

2

15 ns

3-STATE

30b

1.1 Mb

0.015A

COMMON

Asynchronous

36b

3.45V

3.15V

1.5mm

17mm

17mm

1.4mm

符合RoHS标准

含铅

IDT71V65603S150PF8
IDT71V65603S150PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2015

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.325mA

256KX36

3-STATE

36

0.04A

9437184 bit

3.8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

71T75802S166PFG8
71T75802S166PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

TQFP

100

245mA

RAM, SRAM

Tape & Reel

2012

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

2.5V

QUAD

鸥翼

260

1

0.65mm

166MHz

30

COMMERCIAL

Parallel

1

3.5 ns

3-STATE

20b

18 Mb

0.04A

COMMON

Synchronous

18b

2.38V

2.625V

2.375V

20mm

14mm

1.4mm

符合RoHS标准

无铅

7140LA35PF8
7140LA35PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

120mA

RAM, SDR, SRAM

2013

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

1kB

2

35 ns

1KX8

3-STATE

20b

8 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

709379L7PF8
709379L7PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

465mA

RAM, SDR, SRAM

2009

活跃

70°C

0°C

5V

45.45MHz

Parallel

72kB

2

7.5 ns

30b

576 kb

Synchronous

18b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

71V124SA12TYGI8
71V124SA12TYGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

32

140mA

RAM, SDR, SRAM - Asynchronous

2013

e3

yes

活跃

3 (168 Hours)

32

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

J BEND

260

1

INDUSTRIAL

Parallel

128kB

1

12 ns

3-STATE

17b

1 Mb

COMMON

Asynchronous

8b

3V

3.6V

3V

3.7592mm

21.95mm

7.6mm

2.67mm

符合RoHS标准

无铅

709379L9PF8
709379L9PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

400mA

RAM, SDR, SRAM

2001

活跃

70°C

0°C

5V

40MHz

Parallel

72kB

2

9 ns

30b

576 kb

Synchronous

18b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V67603S133PFI8
IDT71V67603S133PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

133MHz

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.28mA

256KX36

3-STATE

36

0.07A

9437184 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V65802S100BG
IDT71V65802S100BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

100MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

512KX18

3-STATE

18

0.04A

9437184 bit

5 ns

COMMON

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71V3577S85PF
IDT71V3577S85PF
Integrated Device Technology (IDT) 数据表

19 In Stock

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2005

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

87MHz

0.18mA

128KX36

3-STATE

36

0.03A

4718592 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant