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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 终端数量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V25L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 165mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 25 ns | 8KX16 | 3-STATE | 26b | 128 kb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
 | 71V3556SA166BQGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | INDUSTRIAL | Parallel | 1 | 17b | 4.5 Mb | 3.5 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | 70261L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 15 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.005A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 70V35S20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 18kB | 2 | 20 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.005A | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
 | 7134SA25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 280mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | IDT71T75902S75PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.275mA | 1MX18 | 3-STATE | 18 | 0.04A | 18874368 bit | 7.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | 7007S55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 270mA | RAM, SDR, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 55 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 71256L55DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 115mA | RAM, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn63Pb37) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 55 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.0005A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 5.08mm | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 70V659S10BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 512kB | 2 | 10 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
 | 70T3599S166BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
 | IDT71V25761SA200BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 200MHz | 未说明 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.1 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | 70V3379S5PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 360mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 100MHz | COMMERCIAL | Parallel | 72kB | 2 | 5 ns | 3-STATE | 30b | 576 kb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 7019L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 340mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 128kB | 2 | 15 ns | 34b | 1.1 Mb | Asynchronous | 9b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | 7133SA90J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 280mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 90 ns | 3-STATE | 22b | 32 kb | 0.015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
 | 71V424L15PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 145mA | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
 | 70V07L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 120mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 35 ns | 3-STATE | 30b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
 | 71V65603S100PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 270mA | 100MHz | RAM, SDR, SRAM | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | 270mA | INDUSTRIAL | Parallel | 1.1MB | 1 | 10 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.06A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 1.4mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V67603S150BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 325mA | 150MHz | RAM, SDR, SRAM | 2009 | 活跃 | 85°C | -40°C | 3.3V | 150MHz | 325mA | Parallel | 1.1MB | 1 | 3.8 ns | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
 | 71T75602S166BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 245mA | RAM, SRAM | Tape & Reel | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 166MHz | COMMERCIAL | Parallel | 1 | 3.5 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 70V9099L12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 200mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | COMMERCIAL | Parallel | 128kB | 2 | 12 ns | 3-STATE | 34b | 1 Mb | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 7133SA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 7035L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 20 ns | 8KX8 | 3-STATE | 13b | 144 kb | 0.0015A | COMMON | Asynchronous | 18b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 70V9199L12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 200mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | COMMERCIAL | Parallel | 2 | 25 ns | 3-STATE | 34b | 1.1 Mb | COMMON | Synchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
| 71V416L10PHG8 | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | 44 | 70°C | e3 | icon-pbfree yes | 3 (168 Hours) | 3A991.B.2.A | Matte Tin (Sn) - annealed | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | compliant | 30 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | ASYNCHRONOUS | 0.18mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 10 ns | PARALLEL | COMMON | 标准SRAM | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
 | 7016L12JG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 68 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 2 | 12 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 |
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70V25L25PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA166BQGI8
Integrated Device Technology (IDT)
分类:Memory
-
70261L15PF
Integrated Device Technology (IDT)
分类:Memory
-
70V35S20PF8
Integrated Device Technology (IDT)
分类:Memory
-
7134SA25J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75902S75PF
Integrated Device Technology (IDT)
分类:Memory
-
7007S55J8
Integrated Device Technology (IDT)
分类:Memory
-
71256L55DB
Integrated Device Technology (IDT)
分类:Memory
-
70V659S10BF
Integrated Device Technology (IDT)
分类:Memory
-
70T3599S166BF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761SA200BG
Integrated Device Technology (IDT)
分类:Memory
-
70V3379S5PRF
Integrated Device Technology (IDT)
分类:Memory
-
7019L15PF
Integrated Device Technology (IDT)
分类:Memory
-
7133SA90J
Integrated Device Technology (IDT)
分类:Memory
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71V424L15PHG8
Integrated Device Technology (IDT)
分类:Memory
-
70V07L35J
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S100PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S150BQI
Integrated Device Technology (IDT)
分类:Memory
-
71T75602S166BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V9099L12PF
Integrated Device Technology (IDT)
分类:Memory
-
7133SA20J8
Integrated Device Technology (IDT)
分类:Memory
-
7035L20PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V9199L12PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V416L10PHG8
Integrated Device Technology Inc
分类:Memory
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7016L12JG8
Integrated Device Technology (IDT)
分类:Memory