品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71V67602S133BQGI
IDT71V67602S133BQGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e1

165

3A991.B.2.A

锡银铜

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

1

1mm

unknown

133MHz

不合格

INDUSTRIAL

Parallel

SYNCHRONOUS

256KX36

36

9437184 bit

4.2 ns

3.465V

3.135V

1.2mm

15mm

13mm

符合RoHS标准

IDT71P71804S250BQ
IDT71P71804S250BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

DDR, RAM, SRAM

2007

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

250MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.65mA

1MX18

3-STATE

18

0.325A

18874368 bit

0.45 ns

COMMON

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

7007L55PF
7007L55PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

230mA

RAM, SDR, SRAM

2010

e3

yes

活跃

3 (168 Hours)

80

3A991

Matte Tin (Sn) - annealed

70°C

0°C

5V

QUAD

鸥翼

260

1

0.65mm

30

5V

INDUSTRIAL

Parallel

32kB

2

55 ns

3-STATE

30b

256 kb

0.01A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V016SA12PH8
IDT71V016SA12PH8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

0.8mm

not_compliant

20

R-PDSO-G44

不合格

3.3V

COMMERCIAL

Parallel

1

0.15mA

64KX16

3-STATE

16

0.01A

1048576 bit

12 ns

COMMON

3.15V

3.6V

3V

YES

1.2mm

18.41mm

10.16mm

Non-RoHS Compliant

IDT71P74804S200BQ
IDT71P74804S200BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

QDR, RAM, SRAM

2008

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

200MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.75mA

1MX18

3-STATE

18

0.335A

18874368 bit

0.45 ns

SEPARATE

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V35761SA166BQI
IDT71V35761SA166BQI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

166MHz

20

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.33mA

128KX36

3-STATE

36

0.035A

4718592 bit

3.5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V2546S100PF
IDT71V2546S100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

250mA

RAM, SRAM

2008

e0

3 (168 Hours)

100

70°C

0°C

流水线结构

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

不合格

COMMERCIAL

Parallel

1

5 ns

3-STATE

36

17b

4.5 Mb

0.04A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

Non-RoHS Compliant

IDT71V3558XS133PFG
IDT71V3558XS133PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e3

3 (168 Hours)

100

3A991.B.2.A

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

260

1

0.65mm

unknown

133MHz

30

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

256KX18

3-STATE

18

0.04A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

符合RoHS标准

71V3576S150PFG8
71V3576S150PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

TQFP

100

295mA

150MHz

RAM, SDR, SRAM

Tape & Reel

2013

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

3.3V

QUAD

鸥翼

260

1

0.65mm

150MHz

30

COMMERCIAL

Parallel

512kB

1

3.8 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

14mm

1.4mm

符合RoHS标准

无铅

IDT71V432S7PFG
IDT71V432S7PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

160mA

RAM, SRAM

2014

e3

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

3.3V

QUAD

鸥翼

260

1

0.65mm

unknown

66MHz

30

不合格

COMMERCIAL

Parallel

1

7 ns

32KX32

3-STATE

32

15b

1 Mb

COMMON

Synchronous

32b

3.63V

3.135V

20mm

符合RoHS标准

IDT71V016SA15Y
IDT71V016SA15Y
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

44

130mA

RAM, SRAM - Asynchronous

Rail/Tube

2007

e0

no

3 (168 Hours)

44

70°C

0°C

3.3V

DUAL

J BEND

225

1

not_compliant

30

不合格

COMMERCIAL

Parallel

1

15 ns

3-STATE

16

16b

1 Mb

COMMON

Asynchronous

16b

3.6V

3V

YES

3.683mm

28.575mm

Non-RoHS Compliant

IDT71256SA25PZI
IDT71256SA25PZI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSSOP

YES

28

RAM, SRAM - Asynchronous

2009

e0

3 (168 Hours)

28

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

5V

DUAL

鸥翼

240

1

0.55mm

20

R-PDSO-G28

不合格

5V

INDUSTRIAL

Parallel

0.145mA

32KX8

3-STATE

8

0.015A

262144 bit

25 ns

COMMON

4.5V

5.5V

4.5V

1.2mm

11.8mm

8mm

符合RoHS标准

IDT71V256SA15YI8
IDT71V256SA15YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

no

3 (168 Hours)

28

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

1

0.085mA

32KX8

3-STATE

8

0.002A

262144 bit

15 ns

COMMON

3V

3.6V

3V

YES

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

IDT71V3559SA75BQG
IDT71V3559SA75BQG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e1

3 (168 Hours)

165

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

260

1

1mm

30

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

256KX18

3-STATE

18

0.04A

4718592 bit

7.5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

符合RoHS标准

IDT70T3319S133DDI
IDT70T3319S133DDI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TQFP

YES

144

RAM, SRAM

2008

e0

4 (72 Hours)

144

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

225

1

0.5mm

not_compliant

133MHz

30

S-PQFP-G144

不合格

2.52.5/3.3V

INDUSTRIAL

Parallel

2

SYNCHRONOUS

0.45mA

256KX18

3-STATE

18

0.02A

4718592 bit

15 ns

COMMON

2.4V

2.6V

2.4V

1.6mm

20mm

20mm

Non-RoHS Compliant

IDT71V3559SA75BQ
IDT71V3559SA75BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

20

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

256KX18

3-STATE

18

0.04A

4718592 bit

7.5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V25761S183PFI
IDT71V25761S183PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

350mA

RAM, SRAM

2009

e0

3 (168 Hours)

100

85°C

-40°C

流水线结构

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

183MHz

20

不合格

INDUSTRIAL

Parallel

1

3.3 ns

3-STATE

36

17b

4.5 Mb

0.035A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

Non-RoHS Compliant

IDT71V35761S183BQ
IDT71V35761S183BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

183MHz

20

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.34mA

128KX36

3-STATE

36

0.03A

4718592 bit

3.3 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71256L25YI
IDT71256L25YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

2005

e0

3 (168 Hours)

28

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

5V

DUAL

J BEND

225

1

1.27mm

not_compliant

20

不合格

INDUSTRIAL

Parallel

32KX8

8

262144 bit

25 ns

5.5V

4.5V

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

IDT71V424S15YI8
IDT71V424S15YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

36

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2009

e0

3 (168 Hours)

36

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.16mA

512KX8

3-STATE

8

0.02A

4194304 bit

15 ns

COMMON

3V

3.6V

3V

3.683mm

23.495mm

10.16mm

Non-RoHS Compliant

IDT71V432S7PF8
IDT71V432S7PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2014

e0

3 (168 Hours)

100

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

1

SYNCHRONOUS

66MHz

0.16mA

32KX32

3-STATE

32

0.015A

1048576 bit

7 ns

COMMON

3.14V

3.63V

3.135V

YES

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71256TTSA15Y
IDT71256TTSA15Y
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

2010

e3

yes

28

EAR99

哑光锡

70°C

0°C

8542.32.00.41

5V

DUAL

J BEND

260

1

1.27mm

30

不合格

5V

INDUSTRIAL

Parallel

0.15mA

32KX8

3-STATE

8

0.015A

262144 bit

15 ns

COMMON

4.5V

5.5V

4.5V

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

IDT71V3559SA80BQ
IDT71V3559SA80BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

20

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

95MHz

0.25mA

256KX18

3-STATE

18

0.04A

4718592 bit

8 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V124SA20YI
IDT71V124SA20YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

2007

e0

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.115mA

128KX8

3-STATE

8

0.01A

1048576 bit

20 ns

COMMON

3V

3.6V

3V

3.683mm

20.955mm

10.16mm

Non-RoHS Compliant

IDT71V3559SA80BQG
IDT71V3559SA80BQG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e1

3 (168 Hours)

165

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

260

1

1mm

30

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

95MHz

0.25mA

256KX18

3-STATE

18

0.04A

4718592 bit

8 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

符合RoHS标准