品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

70V9269L12PRF8
70V9269L12PRF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

205mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

128

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

225

1

0.5mm

33.3MHz

COMMERCIAL

Parallel

32kB

2

12 ns

16KX16

3-STATE

28b

256 kb

0.003A

COMMON

Synchronous

16b

3V

3.6V

3V

1.6mm

20mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71V2558S100PF
IDT71V2558S100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.25mA

128KX36

3-STATE

36

0.04A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V2556S133PFI8
IDT71V2556S133PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2010

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

133MHz

20

R-PQFP-G100

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.31mA

128KX36

3-STATE

36

0.045A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

7143SA55PF
7143SA55PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

285mA

RAM, SRAM

2013

活跃

70°C

0°C

5V

Parallel

2

55 ns

22b

32 kb

Asynchronous

16b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3556S133BG
IDT71V3556S133BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e1

yes

3 (168 Hours)

119

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

8542.32.00.41

3.3V

BOTTOM

BALL

260

1

1.27mm

133MHz

30

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

128KX36

3-STATE

36

0.04A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71V3558S100BQ
IDT71V3558S100BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2007

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

100MHz

20

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

256KX18

3-STATE

18

0.04A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V2556S133BG
IDT71V2556S133BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

133MHz

未说明

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

128KX36

3-STATE

36

0.04A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

符合RoHS标准

71V67803S166BG8
71V67803S166BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

BGA

119

340mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

225

1

166MHz

20

COMMERCIAL

Parallel

1

3.5 ns

3-STATE

19b

9 Mb

0.05A

COMMON

Synchronous

18b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

无

符合RoHS标准

含铅

IDT71V67903S75PFI
IDT71V67903S75PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

117MHz

0.285mA

512KX18

3-STATE

18

0.07A

9437184 bit

7.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V27L35PFI8
70V27L35PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

235mA

RAM, SDR, SRAM

2012

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

中断标志

3.3V

QUAD

鸥翼

240

1

0.5mm

20

INDUSTRIAL

Parallel

64kB

2

35 ns

3-STATE

30b

512 kb

0.006A

COMMON

Asynchronous

16b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71V67602S133BQG
IDT71V67602S133BQG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e1

165

3A991.B.2.A

锡银铜

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

1

1mm

unknown

133MHz

不合格

COMMERCIAL

Parallel

SYNCHRONOUS

256KX36

36

9437184 bit

4.2 ns

3.465V

3.135V

1.2mm

15mm

13mm

符合RoHS标准

IDT71V2556S166PF
IDT71V2556S166PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2010

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

166MHz

20

R-PQFP-G100

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.35mA

128KX36

3-STATE

36

0.04A

4718592 bit

3.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V9269L12PRF
70V9269L12PRF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

205mA

RAM, SDR, SRAM

Bulk

2008

e0

no

活跃

3 (168 Hours)

128

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

225

0.5mm

33.3MHz

COMMERCIAL

Parallel

32kB

2

12 ns

16KX16

3-STATE

28b

256 kb

0.003A

COMMON

Synchronous

16b

3V

3.6V

3V

20mm

14mm

1.4mm

无

符合RoHS标准

含铅

7024L17PF8
7024L17PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

260mA

RAM, SDR, SRAM

2013

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

8kB

2

17 ns

4KX16

3-STATE

24b

64 kb

0.0015A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71V65602S150BG
IDT71V65602S150BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

150MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.325mA

256KX36

3-STATE

36

0.04A

9437184 bit

3.8 ns

COMMON

3V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71V016SA15YI8
IDT71V016SA15YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

no

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.13mA

64KX16

3-STATE

16

0.01A

1048576 bit

15 ns

COMMON

3.15V

3.6V

3.15V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

IDT71P71804S250BQ8
IDT71P71804S250BQ8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

DDR, RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

250MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.65mA

1MX18

3-STATE

18

0.325A

18874368 bit

0.45 ns

COMMON

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

71T75802S150BGI
71T75802S150BGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

BGA

119

235mA

RAM, SRAM

2012

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

225

1

150MHz

INDUSTRIAL

Parallel

1

3.8 ns

3-STATE

20b

18 Mb

0.045A

COMMON

Synchronous

18b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

无

符合RoHS标准

含铅

IDT71V67602S150PFI
IDT71V67602S150PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

325mA

RAM, SRAM

2009

e0

3 (168 Hours)

100

85°C

-40°C

流水线结构

3.3V

QUAD

鸥翼

240

1

0.65mm

150MHz

20

不合格

INDUSTRIAL

Parallel

1

3.8 ns

256KX36

3-STATE

36

18b

9 Mb

0.05A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

符合RoHS标准

IDT71V124SA10YI
IDT71V124SA10YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

2007

e0

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.15mA

128KX8

3-STATE

8

0.01A

1048576 bit

10 ns

COMMON

3.15V

3.6V

3.15V

3.683mm

20.955mm

10.16mm

Non-RoHS Compliant

70V24L15PF8
70V24L15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

185mA

RAM, SDR, SRAM

2004

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

8kB

2

15 ns

4KX16

3-STATE

24b

64 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

70V3389S5PRF
70V3389S5PRF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

360mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

128

Tin/Lead (Sn85Pb15)

70°C

-40°C

PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE

3.3V

QUAD

鸥翼

225

1

0.5mm

100MHz

COMMERCIAL

Parallel

128kB

2

5 ns

64KX18

3-STATE

32b

1.1 Mb

0.015A

COMMON

Synchronous

18b

3.45V

3.15V

20mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71256SA20YI8
IDT71256SA20YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

no

28

EAR99

锡铅

85°C

-40°C

8542.32.00.41

5V

DUAL

J BEND

225

1

1.27mm

30

不合格

INDUSTRIAL

Parallel

1

32KX8

3-STATE

8

262144 bit

20 ns

5.5V

4.5V

YES

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

IDT71V2559S80PF8
IDT71V2559S80PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

95MHz

0.25mA

256KX18

3-STATE

18

0.04A

4718592 bit

8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

71124S15YG8
71124S15YG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

32

155mA

RAM, SDR, SRAM - Asynchronous

Tape & Reel

2009

活跃

70°C

0°C

5V

Parallel

128kB

1

15 ns

17b

1 Mb

Asynchronous

8b

5.5V

4.5V

20.9mm

10.2mm

2.2mm

无

符合RoHS标准

无铅