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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V65602S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.32mA | 256KX36 | 3-STATE | 36 | 0.06A | 9437184 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | IDT71V124SA12TYI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.14mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | 71V432S5PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TQFP | YES | 100 | 100MHz | RAM, SDR, SRAM | 2013 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 0.2mA | 5 ns | 32KX32 | 3-STATE | 15b | 1 Mb | COMMON | 3.63V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
 | IDT71V65602S100BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 100MHz | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 5 ns | COMMON | 3V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 71V35761SA200BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | 260 | 200MHz | Parallel | 1 | 3.1 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | 709089L9PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 350mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 40MHz | 20 | 350mA | 5V | COMMERCIAL | Parallel | 64kB | 2 | 9 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.005A | COMMON | Synchronous | 8b | 5.5V | 4.5V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70V06S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 190mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | IDT71V124SA15YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.12mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 15 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 20.955mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | IDT71V65602S133PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 100 | 3A991.B.2.A | 锡铅 | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 1 | 0.65mm | 133MHz | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 256KX36 | 36 | 9437184 bit | 4.2 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
 | 71V30L25TFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 120mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | FLAT | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 10b | 8 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 70T651S12DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 355mA | RAM, SDR, SRAM | Bulk | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 2.5V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 70T651S15BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 305mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 71V3556SA100BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | COMMERCIAL | Parallel | 1 | 17b | 4.5 Mb | 5 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
 | 7008L35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 255mA | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 35 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.005A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V657S12BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 515mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | INDUSTRIAL | Parallel | 2 | 12 ns | 3-STATE | 15b | 1.1 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 7164L20TDB | Integrated Device Technology (IDT) | 数据表 | 58 In Stock | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 100mA | RAM, SRAM - Asynchronous | Military grade | Bulk | 2007 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 20 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.0002A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | IDT71V256SA10Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | e0 | no | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.1mA | 32KX8 | 3-STATE | 8 | 0.002A | 262144 bit | 10 ns | COMMON | 3V | 3.6V | 3V | YES | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | 71V416L12BEI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 170mA | RAM, SDR, SRAM - Asynchronous | 2014 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
 | 70P3519S200BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 256 | RAM, SRAM | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 256 | 3A991 | 锡银铜 | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 200MHz | 30 | COMMERCIAL | Parallel | 2 | 18b | 9 Mb | 10 ns | 1.9V | 1.7V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | IDT71V65602S100PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 4 (72 Hours) | 100 | 3A991.B.2.A | 锡铅 | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.65mm | unknown | 100MHz | 30 | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 256KX36 | 36 | 9437184 bit | 5 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||
 | 7130SA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 250mA | RAM, SDR, SRAM | Tape & Reel | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | IDT71V65903S85PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 225mA | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 91MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 8.5 ns | 3-STATE | 18 | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
 | 71V3556S100PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | 100MHz | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | IDT71V35761S200PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.1 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 7130LA35TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 120mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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IDT71V65602S133PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA12TYI8
Integrated Device Technology (IDT)
分类:Memory
-
71V432S5PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S100BQ
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA200BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
709089L9PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V06S25J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA15YI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S133PFI8
Integrated Device Technology (IDT)
分类:Memory
-
71V30L25TFG8
Integrated Device Technology (IDT)
分类:Memory
-
70T651S12DR
Integrated Device Technology (IDT)
分类:Memory
-
70T651S15BF8
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA100BQG8
Integrated Device Technology (IDT)
分类:Memory
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7008L35PF
Integrated Device Technology (IDT)
分类:Memory
-
70V657S12BCI8
Integrated Device Technology (IDT)
分类:Memory
-
7164L20TDB
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V256SA10Y8
Integrated Device Technology (IDT)
分类:Memory
-
71V416L12BEI8
Integrated Device Technology (IDT)
分类:Memory
-
70P3519S200BCG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S100PFGI
Integrated Device Technology (IDT)
分类:Memory
-
7130SA20J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65903S85PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3556S100PFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V35761S200PF
Integrated Device Technology (IDT)
分类:Memory
-
7130LA35TF8
Integrated Device Technology (IDT)
分类:Memory