品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT71V124SA20TY | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.095mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | |||||||||||||||||||||||||
![]() | 7134SA20P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 280mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 71V65603S133BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 320mA | RAM, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | INDUSTRIAL | Parallel | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.06A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 70V27L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 225mA | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 64kB | 2 | 15 ns | 30b | 512 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
![]() | IDT71V2546S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 3.8 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | IDT71V3577S85PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 87MHz | 0.19mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||
![]() | IDT71V2546S150PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 3.8 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | IDT71P71604S167BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR, RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 167MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.6mA | 512KX36 | 3-STATE | 36 | 0.275A | 18874368 bit | 0.5 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | IDT71V416L12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.17mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | IDT71V2556S100PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2010 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.26mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
![]() | 70V9279L7PRFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 128 | RAM, SDR, SRAM | Bulk | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 128 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 64kB | 2 | 83MHz | 7 ns | 3-STATE | 30b | 512 kb | 0.003A | COMMON | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
![]() | 70V24L25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 165mA | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 4KX16 | 3-STATE | 24b | 64 kb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V65602S150PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 4 (72 Hours) | 100 | 3A991.B.2.A | 锡铅 | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.65mm | unknown | 150MHz | 30 | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 256KX36 | 36 | 9437184 bit | 3.8 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||||||
![]() | 709099L12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 355mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | 5V | COMMERCIAL | Parallel | 128kB | 2 | 12 ns | 3-STATE | 34b | 1 Mb | 0.003A | COMMON | Synchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
![]() | IDT71V124SA20PHGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOIC | 32 | 115mA | RAM, SRAM - Asynchronous | 卷带 | 2007 | e3 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | unknown | 30 | 不合格 | INDUSTRIAL | Parallel | 1 | 20 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 20.95mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | IDT71V65602S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 133MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 4.2 ns | COMMON | 3V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
![]() | 7130LA25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 170mA | RAM, SDR, SRAM | 1997 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 25 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
![]() | 70V26S55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 140mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 55 ns | 28b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||
![]() | 71321LA20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
![]() | 71V3577S80BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 210mA | RAM, SRAM | Tape & Reel | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | INDUSTRIAL | Parallel | 1 | 8 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
![]() | 71342SA55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 240mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 55 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 70V35L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 18kB | 2 | 0.175mA | 20 ns | 8KX18 | 3-STATE | 26b | 144 kb | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 7015S17PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 310mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 17 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
![]() | IDT71V2546S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | OTHER | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
![]() | IDT71V3556S100BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 100MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant |
IDT71V124SA20TY
Integrated Device Technology (IDT)
分类:Memory
7134SA20P
Integrated Device Technology (IDT)
分类:Memory
71V65603S133BGI
Integrated Device Technology (IDT)
分类:Memory
70V27L15PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V2546S150PFI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3577S85PFI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V2546S150PFI8
Integrated Device Technology (IDT)
分类:Memory
IDT71P71604S167BQ
Integrated Device Technology (IDT)
分类:Memory
IDT71V416L12Y
Integrated Device Technology (IDT)
分类:Memory
IDT71V2556S100PFI
Integrated Device Technology (IDT)
分类:Memory
70V9279L7PRFG
Integrated Device Technology (IDT)
分类:Memory
70V24L25J
Integrated Device Technology (IDT)
分类:Memory
IDT71V65602S150PFGI
Integrated Device Technology (IDT)
分类:Memory
709099L12PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA20PHGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V65602S133BG8
Integrated Device Technology (IDT)
分类:Memory
7130LA25J
Integrated Device Technology (IDT)
分类:Memory
70V26S55J
Integrated Device Technology (IDT)
分类:Memory
71321LA20PF
Integrated Device Technology (IDT)
分类:Memory
71V3577S80BGGI8
Integrated Device Technology (IDT)
分类:Memory
71342SA55PF8
Integrated Device Technology (IDT)
分类:Memory
70V35L20PF
Integrated Device Technology (IDT)
分类:Memory
7015S17PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V2546S133PFI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3556S100BG
Integrated Device Technology (IDT)
分类:Memory
