品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71V124SA20TY
IDT71V124SA20TY
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

2007

e0

no

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

DUAL

J BEND

225

1

1.27mm

30

不合格

3.3V

COMMERCIAL

Parallel

0.095mA

128KX8

3-STATE

8

0.01A

1048576 bit

20 ns

COMMON

3V

3.6V

3.15V

3.7592mm

20.955mm

7.62mm

符合RoHS标准

7134SA20P
7134SA20P
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

PDIP

48

280mA

RAM, SDR, SRAM

Bulk

2013

e0

no

Discontinued

1 (Unlimited)

48

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

AUTOMATIC POWER-DOWN

5V

DUAL

245

1

5V

COMMERCIAL

Parallel

4kB

2

20 ns

4KX8

3-STATE

24b

32 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

5.08mm

61.7mm

15.24mm

3.8mm

符合RoHS标准

含铅

71V65603S133BGI
71V65603S133BGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

BGA

119

320mA

RAM, SRAM

2007

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

3.3V

BOTTOM

BALL

225

1

133MHz

20

INDUSTRIAL

Parallel

1

4.2 ns

256KX36

3-STATE

18b

9 Mb

0.06A

COMMON

Synchronous

36b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

含铅

70V27L15PF8
70V27L15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

225mA

RAM, SDR, SRAM

Tape & Reel

2012

活跃

70°C

0°C

3.3V

Parallel

64kB

2

15 ns

30b

512 kb

Asynchronous

16b

3.6V

3V

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V2546S150PFI
IDT71V2546S150PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2008

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

INDUSTRIAL

Parallel

SYNCHRONOUS

128KX36

36

4718592 bit

3.8 ns

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V3577S85PFI8
IDT71V3577S85PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

87MHz

0.19mA

128KX36

3-STATE

36

0.035A

4718592 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V2546S150PFI8
IDT71V2546S150PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2008

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

INDUSTRIAL

Parallel

SYNCHRONOUS

128KX36

36

4718592 bit

3.8 ns

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71P71604S167BQ
IDT71P71604S167BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

DDR, RAM, SRAM

2007

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

167MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.6mA

512KX36

3-STATE

36

0.275A

18874368 bit

0.5 ns

COMMON

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V416L12Y
IDT71V416L12Y
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

2007

e0

no

3 (168 Hours)

44

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

COMMERCIAL

Parallel

0.17mA

256KX16

3-STATE

16

0.01A

4194304 bit

12 ns

COMMON

3V

3.6V

3V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

IDT71V2556S100PFI
IDT71V2556S100PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2010

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.26mA

128KX36

3-STATE

36

0.045A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V9279L7PRFG
70V9279L7PRFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

128

RAM, SDR, SRAM

Bulk

2008

e3

yes

活跃

3 (168 Hours)

128

Matte Tin (Sn) - annealed

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

260

1

0.5mm

30

COMMERCIAL

Parallel

64kB

2

83MHz

7 ns

3-STATE

30b

512 kb

0.003A

COMMON

3V

3.6V

3V

1.6mm

20mm

14mm

1.4mm

符合RoHS标准

无铅

70V24L25J
70V24L25J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

165mA

RAM, SDR, SRAM

2004

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

J BEND

225

1

COMMERCIAL

Parallel

8kB

2

25 ns

4KX16

3-STATE

24b

64 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

IDT71V65602S150PFGI
IDT71V65602S150PFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

4 (72 Hours)

100

3A991.B.2.A

锡铅

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

225

1

0.65mm

unknown

150MHz

30

R-PQFP-G100

不合格

INDUSTRIAL

Parallel

SYNCHRONOUS

256KX36

36

9437184 bit

3.8 ns

3.465V

3.135V

1.6mm

20mm

14mm

符合RoHS标准

709099L12PF
709099L12PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

355mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

5V

QUAD

鸥翼

240

1

0.5mm

33.3MHz

20

5V

COMMERCIAL

Parallel

128kB

2

12 ns

3-STATE

34b

1 Mb

0.003A

COMMON

Synchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V124SA20PHGI8
IDT71V124SA20PHGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

SOIC

32

115mA

RAM, SRAM - Asynchronous

卷带

2007

e3

3 (168 Hours)

32

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

鸥翼

260

1

unknown

30

不合格

INDUSTRIAL

Parallel

1

20 ns

3-STATE

8

17b

1 Mb

COMMON

Asynchronous

8b

3V

3.6V

3V

20.95mm

符合RoHS标准

IDT71V65602S133BG8
IDT71V65602S133BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

133MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

256KX36

3-STATE

36

0.04A

9437184 bit

4.2 ns

COMMON

3V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

7130LA25J
7130LA25J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

170mA

RAM, SDR, SRAM

1997

活跃

70°C

0°C

5V

Parallel

1kB

2

25 ns

20b

8 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

70V26S55J
70V26S55J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

140mA

RAM, SDR, SRAM

2009

no

活跃

EAR99

70°C

0°C

3.3V

Parallel

32kB

2

55 ns

28b

256 kb

Asynchronous

16b

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

71321LA20PF
71321LA20PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

200mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

备用电池

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

2kB

2

20 ns

3-STATE

22b

16 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

71V3577S80BGGI8
71V3577S80BGGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

BGA

119

210mA

RAM, SRAM

Tape & Reel

2005

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

3.3V

BOTTOM

BALL

260

1

100MHz

30

INDUSTRIAL

Parallel

1

8 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

71342SA55PF8
71342SA55PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

240mA

RAM, SDR, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

4kB

2

55 ns

4KX8

3-STATE

24b

32 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V35L20PF
70V35L20PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SDR, SRAM

Bulk

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

18kB

2

0.175mA

20 ns

8KX18

3-STATE

26b

144 kb

COMMON

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7015S17PF
7015S17PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

310mA

RAM, SDR, SRAM

2010

e0

no

活跃

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.65mm

20

5V

COMMERCIAL

Parallel

9kB

2

17 ns

8KX9

3-STATE

26b

72 kb

0.015A

COMMON

Asynchronous

9b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V2546S133PFI
IDT71V2546S133PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2008

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

133MHz

20

R-PQFP-G100

不合格

2.53.3V

OTHER

Parallel

SYNCHRONOUS

0.31mA

128KX36

3-STATE

36

0.045A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V3556S100BG
IDT71V3556S100BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

100MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

128KX36

3-STATE

36

0.04A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant