品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

筛选水平

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

7008L20PFI8
7008L20PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

335mA

RAM, SDR, SRAM

2010

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

85°C

-40°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

INDUSTRIAL

Parallel

64kB

2

20 ns

64KX8

3-STATE

32b

512 kb

0.01A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7027L20PFI8
7027L20PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

335mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

85°C

-40°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

INDUSTRIAL

Parallel

64kB

2

20 ns

3-STATE

15b

512 kb

0.01A

COMMON

Asynchronous

16b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7140SA100PF
7140SA100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

155mA

RAM, SRAM

2013

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

2

100 ns

1KX8

3-STATE

20b

8 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V67602S150BGI8
IDT71V67602S150BGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

150MHz

未说明

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.325mA

256KX36

3-STATE

36

0.05A

9437184 bit

3.8 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT70V7339S166DDI
IDT70V7339S166DDI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TQFP

YES

144

RAM, SRAM

2008

e0

4 (72 Hours)

144

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

225

1

0.5mm

not_compliant

166MHz

30

S-PQFP-G144

不合格

2.5/3.33.3V

INDUSTRIAL

Parallel

2

SYNCHRONOUS

0.83mA

512KX18

3-STATE

18

0.04A

9437184 bit

12 ns

COMMON

3.15V

3.45V

3.15V

1.6mm

20mm

20mm

Non-RoHS Compliant

7133LA25PFI
7133LA25PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

300mA

SDR

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

INDUSTRIAL

Parallel

4kB

2

25 ns

3-STATE

22b

32 kb

0.004A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7140LA35J
7140LA35J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

120mA

RAM, SDR, SRAM

2013

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

1kB

2

35 ns

1KX8

3-STATE

20b

8 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

7005L15PF
7005L15PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

64

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

8kB

2

15 ns

8KX8

3-STATE

26b

64 kb

0.0015A

COMMON

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

71342SA20J8
71342SA20J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

280mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4kB

2

20 ns

4KX8

3-STATE

24b

32 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71V3577SA85BGG
IDT71V3577SA85BGG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2005

e1

119

3A991.B.2.A

锡银铜

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

1

1.27mm

unknown

不合格

COMMERCIAL

Parallel

SYNCHRONOUS

128KX36

36

4718592 bit

8.5 ns

3.465V

3.135V

2.36mm

22mm

14mm

符合RoHS标准

7009L20PF8
7009L20PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

300mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

128kB

2

20 ns

3-STATE

34b

1 Mb

0.003A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3577SA85BGG8
IDT71V3577SA85BGG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2005

e1

119

3A991.B.2.A

锡银铜

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

1

1.27mm

不合格

COMMERCIAL

Parallel

SYNCHRONOUS

128KX36

36

4718592 bit

8.5 ns

3.465V

3.135V

2.36mm

22mm

14mm

符合RoHS标准

IDT71V3577SA85BQ
IDT71V3577SA85BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2005

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

20

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

87MHz

0.18mA

128KX36

3-STATE

36

0.03A

4718592 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V3556S100PF
IDT71V3556S100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

128KX36

3-STATE

36

0.04A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71P73804S200BQ
IDT71P73804S200BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

DDR2, RAM, SRAM

2005

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

200MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.55mA

1MX18

3-STATE

18

0.3A

18874368 bit

0.45 ns

COMMON

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

7024L45J
7024L45J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

PLCC

YES

84

RAM, SDR, SRAM

2013

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; ARBITER; SEMAPHORE

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

8kB

2

45 ns

4KX16

3-STATE

24b

64 kb

0.0015A

COMMON

2V

5.5V

4.5V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

71V3559S75BQI8
71V3559S75BQI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

Tape & Reel

2009

e0

no

Discontinued

3 (168 Hours)

165

锡铅

85°C

-40°C

3.3V

BOTTOM

BALL

225

1

INDUSTRIAL

Parallel

1

18b

4.5 Mb

7.5 ns

3.465V

15mm

13mm

1.2mm

符合RoHS标准

含铅

71321LA35TF8
71321LA35TF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

LQFP

64

120mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

2kB

2

35 ns

3-STATE

11b

16 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

10mm

10mm

1.4mm

符合RoHS标准

含铅

7019L20PF
7019L20PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

300mA

RAM, SDR, SRAM

Bulk

2009

活跃

70°C

0°C

5V

Parallel

128kB

2

20 ns

17b

1.1 Mb

Asynchronous

9b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V9199L7PF8
70V9199L7PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

250mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

45.45MHz

20

COMMERCIAL

Parallel

2

18 ns

3-STATE

17b

1.1 Mb

COMMON

Synchronous

9b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V3599S166DR
70V3599S166DR
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PQFP

208

500mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn/Pb)

70°C

0°C

3.3V

QUAD

鸥翼

225

1

0.5mm

166MHz

COMMERCIAL

Parallel

512kB

2

20 ns

3-STATE

34b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.45V

3.15V

28mm

28mm

3.5mm

符合RoHS标准

含铅

7140SA55CB
7140SA55CB
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

10 Weeks

DIP

NO

48

RAM, SDR, SRAM

Military grade

Bulk

2013

e0

no

活跃

1 (Unlimited)

48

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

DUAL

THROUGH-HOLE

240

1

5V

MILITARY

Parallel

1kB

2

0.19mA

55 ns

1KX8

3-STATE

20b

8 kb

0.03A

MIL-PRF-38535

COMMON

5.5V

4.5V

61.72mm

15.24mm

3.3mm

符合RoHS标准

含铅

7038L20PF8
7038L20PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

300mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

2

20 ns

64KX18

3-STATE

16b

1.1 Mb

0.003A

COMMON

Asynchronous

18b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3577SA80BG
IDT71V3577SA80BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.2mA

128KX36

3-STATE

36

0.03A

4718592 bit

8 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

71342LA45J
71342LA45J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

200mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4kB

2

45 ns

4KX8

3-STATE

24b

32 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅