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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7016L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 260mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 71V016SA12BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 160mA | RAM, SDR, SRAM - Asynchronous | 2011 | e0 | no | 活跃 | 3 (168 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 70V3569S5DRI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 415mA | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 85°C | -40°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 100MHz | 20 | INDUSTRIAL | Parallel | 72kB | 2 | 10 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71V416YL15PHI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 锡铅 | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | INDUSTRIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||
 | 70T3599S133BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 370mA | 133MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | 20 | COMMERCIAL | Parallel | 512kB | 2 | 4.2 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 7014S15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 15 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | IDT71V416YL15Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.16mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | 71342LA20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 7014S20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 245mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 20 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 7014S15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 15 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | YES | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71T75702S85BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | 245mA | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 未说明 | 1 | not_compliant | 91MHz | 未说明 | 不合格 | INDUSTRIAL | Parallel | 1 | 8.5 ns | 3-STATE | 36 | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | 70V631S10BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 18b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
 | IDT70825S20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 80 | RAM | 2009 | e0 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | S-PQFP-G80 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.38mA | 8KX16 | 16 | 0.015A | 131072 bit | 20 ns | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | IDT71T75702S85BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 90MHz | 0.245mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 8.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | IDT71V416YL15Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | no | 44 | 3A991.B.2.A | 锡铅 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||
 | 70V08S15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 15 ns | 64KX8 | 3-STATE | 16b | 512 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | IDT71V416YS10PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 锡铅 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | INDUSTRIAL | Parallel | 256KX16 | 16 | 4194304 bit | 10 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||
 | IDT71V65602S100PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e3 | 3 (168 Hours) | 100 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | R-PQFP-G100 | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 256KX36 | 36 | 9437184 bit | 5 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
 | IDT71V416YL15PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | 160mA | RAM, SRAM - Asynchronous | Rail/Tube | 2008 | e0 | no | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 15 ns | 3-STATE | 16 | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||
 | IDT71016S12PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.21mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 12 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT71V3556S100BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2007 | e0 | no | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 100MHz | 20 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.255mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | IDT71T75702S85PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 90MHz | 0.245mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 8.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 7164L85DB | Integrated Device Technology (IDT) | 数据表 | 9 In Stock | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn63Pb37) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 8kB | 1 | 85 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.0002A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 71V3556SA166BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 350mA | 166MHz | RAM, SDR, SRAM | 2015 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 166MHz | 20 | 350mA | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 70V35L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 175mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 18kB | 2 | 20 ns | 8KX18 | 3-STATE | 26b | 144 kb | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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7016L15PF
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA12BFI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S5DRI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YL15PHI8
Integrated Device Technology (IDT)
分类:Memory
-
70T3599S133BC
Integrated Device Technology (IDT)
分类:Memory
-
7014S15PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YL15Y
Integrated Device Technology (IDT)
分类:Memory
-
71342LA20PF
Integrated Device Technology (IDT)
分类:Memory
-
7014S20PF8
Integrated Device Technology (IDT)
分类:Memory
-
7014S15PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75702S85BGI
Integrated Device Technology (IDT)
分类:Memory
-
70V631S10BFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT70825S20PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75702S85BGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YL15Y8
Integrated Device Technology (IDT)
分类:Memory
-
70V08S15PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YS10PH8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S100PFG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YL15PHI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71016S12PH8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S100BQI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75702S85PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7164L85DB
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA166BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V35L20PF8
Integrated Device Technology (IDT)
分类:Memory