品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71V321L35JG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 95mA | RAM, SDR, SRAM | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 260 | 1 | 30 | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 3.6V | 3V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 71V321L35JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 95mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 260 | 1 | 30 | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 3.6V | 3V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 71V25761S183PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 350mA | 183MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 183MHz | INDUSTRIAL | Parallel | 512kB | 1 | 3.3 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | IDT71V416YS12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.18mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | IDT71V124SA20YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.115mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 20.955mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71V3559SA80BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e1 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 95MHz | 0.25mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | 71V3576S150PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 295mA | 150MHz | RAM, SDR, SRAM | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 150MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.8 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
![]() | IDT71T75602S166PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.245mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 3.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
![]() | IDT71V2546S100PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71P73604S250BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR2, RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 250MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.8mA | 512KX36 | 3-STATE | 36 | 0.325A | 18874368 bit | 0.45 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 7026L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 285mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 15 ns | 14b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
![]() | 71V67703S75PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 30 | INDUSTRIAL | Parallel | 1 | 0.285mA | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | 7.5 ns | COMMON | 3.465V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | 70T633S15BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 305mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 19b | 9 Mb | 0.01A | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71V424S12PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 240 | 1 | 0.8mm | not_compliant | 30 | R-PDSO-G44 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.17mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 7132LA100J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 110mA | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 100 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 70V9359L6PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 330mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 100MHz | 20 | COMMERCIAL | Parallel | 18kB | 2 | 6 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.003A | COMMON | Synchronous | 18b | 3V | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | IDT6116LA45SO8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.075mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 45 ns | COMMON | 2V | 5.5V | 4.5V | YES | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | |||||||||||||||||||||
![]() | 7140SA55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 155mA | RAM, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V124SA20PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G32 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.115mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3.15V | 1.2mm | 20.95mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 70T3599S133BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 208 | 450mA | RAM, SRAM | Tape & Reel | 2009 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | Parallel | 2 | 15 ns | 34b | 4.5 Mb | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | 7130LA25TFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 220mA | RAM, SDR, SRAM | 2013 | 活跃 | 85°C | -40°C | 5V | Parallel | 1kB | 2 | 25 ns | 10b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 70T3319S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 18b | 4 Mb | COMMON | Synchronous | 18b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 71V3556SA133BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | COMMERCIAL | Parallel | 1 | 17b | 4.5 Mb | 4.2 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
![]() | IDT6116SA25SOI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.12mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 25 ns | COMMON | 4.5V | 5.5V | 4.5V | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | IDT71V3558S200PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.4mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 3.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant |
71V321L35JG8
Integrated Device Technology (IDT)
分类:Memory
71V321L35JG
Integrated Device Technology (IDT)
分类:Memory
71V25761S183PFGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416YS12Y
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA20YI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3559SA80BQG
Integrated Device Technology (IDT)
分类:Memory
71V3576S150PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S166PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V2546S100PF
Integrated Device Technology (IDT)
分类:Memory
IDT71P73604S250BQ
Integrated Device Technology (IDT)
分类:Memory
7026L15J
Integrated Device Technology (IDT)
分类:Memory
71V67703S75PFGI8
Integrated Device Technology (IDT)
分类:Memory
70T633S15BC8
Integrated Device Technology (IDT)
分类:Memory
IDT71V424S12PHI
Integrated Device Technology (IDT)
分类:Memory
7132LA100J
Integrated Device Technology (IDT)
分类:Memory
70V9359L6PF
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA45SO8
Integrated Device Technology (IDT)
分类:Memory
7140SA55PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA20PHI
Integrated Device Technology (IDT)
分类:Memory
70T3599S133BFGI8
Integrated Device Technology (IDT)
分类:Memory
7130LA25TFI8
Integrated Device Technology (IDT)
分类:Memory
70T3319S133BFI8
Integrated Device Technology (IDT)
分类:Memory
71V3556SA133BQG8
Integrated Device Technology (IDT)
分类:Memory
IDT6116SA25SOI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3558S200PF
Integrated Device Technology (IDT)
分类:Memory
