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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V3557S80BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 250mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 95MHz | COMMERCIAL | Parallel | 1 | 8 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 70V3569S5BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 415mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 100MHz | 20 | INDUSTRIAL | Parallel | 72kB | 2 | 10 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70V35L15PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 185mA | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 8KX18 | 26b | 144 kb | Asynchronous | 18b | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71V3577S75BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 117MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | 225 | 117MHz | Parallel | 512kB | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
 | IDT7164LS20Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e3 | yes | 28 | EAR99 | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | J BEND | 260 | 1 | 1.27mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 0.17mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 19 ns | COMMON | 2V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT7164L35YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e3 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 40 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.09mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | 符合RoHS标准 | ||||||||||||||||||||||||
 | 7140SA35JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 230mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.08A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V3577YS80PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2006 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.2mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
 | IDT7164L35YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e3 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.08mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | 符合RoHS标准 | ||||||||||||||||||||||||
 | IDT71V3557S80PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 95MHz | 0.25mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
 | IDT71V65602S100PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 5 ns | COMMON | 3V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 71V321L25PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 100mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 7143LA35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | Tape & Reel | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 2 | 35 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | 70T3519S133DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 370mA | 133MHz | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 133MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 2 | 4.2 ns | 3-STATE | 36b | 9 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 71321SA45J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; ARBITER | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 0.19mA | 45 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V30L35TFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 145mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | FLAT | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 70V07S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 140mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 不合格 | COMMERCIAL | Parallel | 32kB | 2 | 55 ns | 3-STATE | 30b | 256 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 71V30S25TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 150mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 0.5mm | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71T75802S133PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 195mA | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 4.2 ns | 3-STATE | 18 | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 70V07L25JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 140mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | J BEND | 225 | 1 | INDUSTRIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 15b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V25L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 185mA | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 8KX16 | 3-STATE | 26b | 128 kb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 7025L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 70V658S12BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 465mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | COMMERCIAL | Parallel | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71T75602S150PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 215mA | RAM, SRAM | 2012 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 3.8 ns | 3-STATE | 36 | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | IDT71V3558S100BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 100MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant |
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71V3557S80BG
Integrated Device Technology (IDT)
分类:Memory
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70V3569S5BFI
Integrated Device Technology (IDT)
分类:Memory
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70V35L15PFG8
Integrated Device Technology (IDT)
分类:Memory
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71V3577S75BGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164LS20Y
Integrated Device Technology (IDT)
分类:Memory
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IDT7164L35YG8
Integrated Device Technology (IDT)
分类:Memory
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7140SA35JI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577YS80PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164L35YGI8
Integrated Device Technology (IDT)
分类:Memory
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IDT71V3557S80PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S100PF
Integrated Device Technology (IDT)
分类:Memory
-
71V321L25PFG8
Integrated Device Technology (IDT)
分类:Memory
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7143LA35PF8
Integrated Device Technology (IDT)
分类:Memory
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70T3519S133DR
Integrated Device Technology (IDT)
分类:Memory
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71321SA45J
Integrated Device Technology (IDT)
分类:Memory
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71V30L35TFGI8
Integrated Device Technology (IDT)
分类:Memory
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70V07S55PF
Integrated Device Technology (IDT)
分类:Memory
-
71V30S25TF
Integrated Device Technology (IDT)
分类:Memory
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IDT71T75802S133PF
Integrated Device Technology (IDT)
分类:Memory
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70V07L25JI
Integrated Device Technology (IDT)
分类:Memory
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70V25L15PF
Integrated Device Technology (IDT)
分类:Memory
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7025L20J8
Integrated Device Technology (IDT)
分类:Memory
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70V658S12BC8
Integrated Device Technology (IDT)
分类:Memory
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IDT71T75602S150PF
Integrated Device Technology (IDT)
分类:Memory
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IDT71V3558S100BG
Integrated Device Technology (IDT)
分类:Memory