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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7130SA35TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | QUAD | 鸥翼 | 240 | 1 | 5V | 0.5mm | 20 | 64 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 1kB | 2 | 165mA | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.03A | COMMON | Asynchronous | 8b | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V424L12Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 36 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 3.3V | 1.27mm | not_compliant | 30 | 36 | 不合格 | 3.6V | 3.3V | COMMERCIAL | 3V | Parallel | 0.155mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71V3556S150PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | RAM, SRAM | 2007 | 70°C | 0°C | 150MHz | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 70V05L25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.8mm | 20 | 64 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 165mA | 25 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | Asynchronous | 8b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 7005S20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | QUAD | J BEND | 225 | 1 | 5V | 68 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.155A | COMMON | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | IDT71V35761S166PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.65mm | not_compliant | 166MHz | 20 | 100 | R-PQFP-G100 | 不合格 | 3.465V | 3.3V | INDUSTRIAL | 3.135V | Parallel | SYNCHRONOUS | 0.33mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 70V05S20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.8mm | 20 | 64 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 200mA | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70V3569S6BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | RAM, SRAM | 2014 | e1 | yes | 3 (168 Hours) | 208 | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 3.3V | 0.8mm | 30 | 208 | 不合格 | 3.45V | 2.5/3.33.3V | COMMERCIAL | 3.15V | Parallel | 2 | SYNCHRONOUS | 83MHz | 0.31mA | 16KX36 | 3-STATE | 36 | 0.015A | 589824 bit | 6 ns | COMMON | 3.15V | 1.7mm | 15mm | 15mm | 符合RoHS标准 | ||||||||||||||||||||||
 | IDT71T75702S80BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 未说明 | 1 | 2.5V | 1.27mm | not_compliant | 未说明 | 119 | 不合格 | 2.625V | 2.5V | INDUSTRIAL | 2.375V | Parallel | SYNCHRONOUS | 95MHz | 0.27mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 8 ns | COMMON | 2.38V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 70V24S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.5mm | 20 | 100 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 180mA | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | IDT71V416YL12Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | no | 44 | 3A991.B.2.A | 锡铅 | 70°C | 0°C | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 3.3V | 1.27mm | 30 | 44 | 不合格 | 3.6V | COMMERCIAL | 3V | Parallel | 256KX16 | 16 | 4194304 bit | 12 ns | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||
 | 7006S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | 鸥翼 | 240 | 1 | 5V | 0.8mm | 20 | 64 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 16kB | 2 | 250mA | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 7130SA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | Tape & Reel | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 1kB | 2 | 250mA | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V65602S100PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | RAM, SRAM | Tape & Reel (TR) | 2007 | 85°C | -40°C | 100MHz | Parallel | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V65903S85PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.65mm | not_compliant | 91MHz | 20 | 100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 3.465V | 3.135V | 1 | 225mA | 8.5 ns | 3-STATE | 18 | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 70125L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2.3kB | 2 | 35 ns | 3-STATE | 22b | 18 kb | 0.015A | COMMON | 2V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71V546XS133PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | RAM, SRAM | Tape & Reel (TR) | 2007 | 70°C | 0°C | 133MHz | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71T75902S85PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | 鸥翼 | 240 | 1 | 2.5V | 0.65mm | not_compliant | 20 | 100 | R-PQFP-G100 | 不合格 | 2.625V | 2.5V | INDUSTRIAL | 2.375V | Parallel | SYNCHRONOUS | 90MHz | 0.245mA | 1MX18 | 3-STATE | 18 | 0.06A | 18874368 bit | 8.5 ns | COMMON | 2.38V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 70V25L35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.5mm | 20 | 100 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 16kB | 2 | 155mA | 35 ns | 8KX16 | 3-STATE | 13b | 128 kb | COMMON | Asynchronous | 16b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 71V2556SA166BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | RAM, SRAM | Tape & Reel | 2011 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | BOTTOM | BALL | 225 | 1 | 3.3V | 166MHz | 20 | 119 | 3.3V | COMMERCIAL | Parallel | 3.465V | 3.135V | 1 | 350mA | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V65602S150BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | BOTTOM | BALL | 未说明 | 1 | 3.3V | 1.27mm | not_compliant | 150MHz | 未说明 | 119 | 不合格 | 3.465V | 3.3V | COMMERCIAL | 3.135V | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 3.8 ns | COMMON | 3V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT71V016SA15YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 3.3V | 1.27mm | not_compliant | 30 | 44 | 不合格 | 3.6V | 3.3V | INDUSTRIAL | 3.15V | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 15 ns | COMMON | 3.15V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT71P71804S250BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR, RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | BOTTOM | BALL | 225 | 1 | 1.8V | 1mm | not_compliant | 250MHz | 20 | 165 | 不合格 | 1.9V | 1.5/1.81.8V | COMMERCIAL | 1.7V | Parallel | SYNCHRONOUS | 0.65mA | 1MX18 | 3-STATE | 18 | 0.325A | 18874368 bit | 0.45 ns | COMMON | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 71T75802S150BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | RAM, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | BOTTOM | BALL | 225 | 1 | 2.5V | 150MHz | 119 | 2.5V | INDUSTRIAL | Parallel | 2.625V | 2.375V | 1 | 235mA | 3.8 ns | 3-STATE | 20b | 18 Mb | 0.045A | COMMON | Synchronous | 18b | 2.38V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71V67602S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 85°C | -40°C | 流水线结构 | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.65mm | 150MHz | 20 | 100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 3.465V | 3.135V | 1 | 325mA | 3.8 ns | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 20mm | 符合RoHS标准 |
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7130SA35TF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424L12Y8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S150PF
Integrated Device Technology (IDT)
分类:Memory
-
70V05L25PF8
Integrated Device Technology (IDT)
分类:Memory
-
7005S20J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V35761S166PFI8
Integrated Device Technology (IDT)
分类:Memory
-
70V05S20PF
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S6BFG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75702S80BGI
Integrated Device Technology (IDT)
分类:Memory
-
70V24S35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YL12Y8
Integrated Device Technology (IDT)
分类:Memory
-
7006S35PF
Integrated Device Technology (IDT)
分类:Memory
-
7130SA20J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S100PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65903S85PF
Integrated Device Technology (IDT)
分类:Memory
-
70125L35J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V546XS133PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75902S85PFI
Integrated Device Technology (IDT)
分类:Memory
-
70V25L35PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V2556SA166BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S150BG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA15YI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P71804S250BQ8
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S150BGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V67602S150PFI
Integrated Device Technology (IDT)
分类:Memory