品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT71V2558S100BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | 100MHz | 未说明 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||
![]() | IDT71V3579YS85PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | RAM, SRAM | Tape & Reel (TR) | 2006 | e0 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 0.635mm | not_compliant | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 87MHz | 0.18mA | 256KX18 | 3-STATE | 18 | 0.03A | 4718592 bit | 8.5 ns | COMMON | 3.14V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||
![]() | 71342LA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT6116LA35TPGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e3 | 24 | EAR99 | 哑光锡 | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 260 | 1 | 2.54mm | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.095mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | 4.191mm | 31.75mm | 7.62mm | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | 70V5388S133BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 256 | 320mA | RAM, SRAM | Tape & Reel | 2008 | e0 | no | Discontinued | 3 (168 Hours) | 256 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 4 | 3.4 ns | 3-STATE | 16b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.4mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 70V9099L12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 200mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | COMMERCIAL | Parallel | 128kB | 2 | 12 ns | 3-STATE | 34b | 1 Mb | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 71V2556S166PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 350mA | RAM, SRAM | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | FLAT | 260 | 1 | 0.65mm | 166MHz | 30 | COMMERCIAL | Parallel | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | IDT6116SA20TPI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.13mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 20 ns | COMMON | 4.5V | 5.5V | 4.5V | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | 70V34L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 175mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 9kB | 2 | 20 ns | 4KX18 | 3-STATE | 24b | 72 kb | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 70V659S15BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 440mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 20 | 440mA | COMMERCIAL | Parallel | 512kB | 2 | 15 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.4mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 7140SA55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 155mA | RAM, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V124SA20PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G32 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.115mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3.15V | 1.2mm | 20.95mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | IDT71016S15YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.18mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 15 ns | COMMON | 4.5V | 5.5V | 4.5V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | IDT71V416VS10Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e3 | 44 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 1 | 1.27mm | unknown | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 10 ns | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
![]() | 7024S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 310mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V3556S100BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 100MHz | 未说明 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.255mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | IDT71V416VL15BEG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 48 | RAM, SRAM - Asynchronous | 2005 | e1 | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | unknown | 30 | S-PBGA-B48 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.16mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 9mm | 9mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | IDT71V124SA10PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | 30 | R-PDSO-G32 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.145mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 3.6V | 3.15V | 1.2mm | 20.95mm | 10.16mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | 70V24L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 165mA | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 4KX16 | 3-STATE | 24b | 64 kb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 70T659S12BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 395mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 12 ns | 3-STATE | 17b | 4.5 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | IDT71V416VL15Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e3 | 44 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 1 | 1.27mm | unknown | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
![]() | 70V08L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 225mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 15 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V416VS12PHGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2005 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | unknown | 30 | R-PDSO-G44 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.18mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||
![]() | 7007L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 275mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 20 ns | 3-STATE | 15b | 256 kb | 0.005A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 71V30L35TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 115mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池操作 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
IDT71V2558S100BG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3579YS85PF8
Integrated Device Technology (IDT)
分类:Memory
71342LA20J
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA35TPGI
Integrated Device Technology (IDT)
分类:Memory
70V5388S133BC8
Integrated Device Technology (IDT)
分类:Memory
70V9099L12PF8
Integrated Device Technology (IDT)
分类:Memory
71V2556S166PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT6116SA20TPI
Integrated Device Technology (IDT)
分类:Memory
70V34L20PF8
Integrated Device Technology (IDT)
分类:Memory
70V659S15BF8
Integrated Device Technology (IDT)
分类:Memory
7140SA55PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA20PHI
Integrated Device Technology (IDT)
分类:Memory
IDT71016S15YI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS10Y8
Integrated Device Technology (IDT)
分类:Memory
7024S15J
Integrated Device Technology (IDT)
分类:Memory
IDT71V3556S100BGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL15BEG
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10PH
Integrated Device Technology (IDT)
分类:Memory
70V24L25J8
Integrated Device Technology (IDT)
分类:Memory
70T659S12BCI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL15Y8
Integrated Device Technology (IDT)
分类:Memory
70V08L15PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS12PHGI
Integrated Device Technology (IDT)
分类:Memory
7007L20PF
Integrated Device Technology (IDT)
分类:Memory
71V30L35TF8
Integrated Device Technology (IDT)
分类:Memory
