品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71T75802S133BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 195mA | 133MHz | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 133MHz | COMMERCIAL | Parallel | 2.3MB | 1 | 4.2 ns | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 71V016SA20BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 120mA | RAM, SDR, SRAM - Asynchronous | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | IDT71V424L15PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.145mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | IDT71V416VS10PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2005 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | unknown | 30 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.2mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 10 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | ||||||||||||||||||||||
![]() | IDT71T75802S133PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.195mA | 1MX18 | 3-STATE | 18 | 0.04A | 18874368 bit | 4.2 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
![]() | 70T3519S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 36b | 9 Mb | COMMON | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 70V9289L9PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | 40MHz | RAM, SRAM | 2009 | 85°C | -40°C | 3.3V | 40MHz | Parallel | 2 | 20 ns | 32b | 1 Mb | Synchronous | 16b | 3.6V | 3V | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||
![]() | 709089L9PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | FLAT | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 66MHz | 0.35mA | 9 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.005A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | 71V65603S150PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 150MHz | Tape & Reel | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 150MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 0.325mA | 6.7 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
![]() | IDT71V416VS10PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 10 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | ||||||||||||||||||||||||||||
![]() | 71V65803S150PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | TQFP | YES | 100 | 150MHz | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 150MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 0.325mA | 6.7 ns | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | IDT71V3556S100BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1mm | not_compliant | 100MHz | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||
![]() | IDT71V35761S166PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.32mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
![]() | 70V9089L9PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 225mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 40MHz | 20 | COMMERCIAL | Parallel | 2 | 20 ns | 64KX8 | 3-STATE | 16b | 512 kb | 0.003A | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
![]() | IDT71T75602S200PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2010 | e3 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | unknown | 200MHz | 30 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 512KX36 | 3-STATE | 36 | 18874368 bit | 3.2 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||
![]() | IDT71V3556S100BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2007 | e1 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1mm | unknown | 100MHz | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
![]() | IDT71V424L12YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 36 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.155mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | 70V9079L9PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 225mA | RAM, SRAM | Tape & Reel | 2004 | 活跃 | 70°C | 0°C | 3.3V | 40MHz | Parallel | 2 | 20 ns | 30b | 256 kb | Synchronous | 8b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
![]() | IDT71T75602S200PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2010 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 512KX36 | 3-STATE | 36 | 18874368 bit | 3.2 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | IDT6116LA45SOGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOIC | 24 | 95mA | RAM, SRAM - Asynchronous | Rail/Tube | 2008 | e3 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | 鸥翼 | 260 | 1 | unknown | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 45 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 2.65mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | IDT71V416YL10PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 锡铅 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 10 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | IDT71V416YL10Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.18mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 10 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | IDT71V3556S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 133MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
![]() | IDT71T75602S200PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | RAM, SRAM | Tape & Reel (TR) | 2010 | e3 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 2.5V | QUAD | 鸥翼 | 0.635mm | unknown | 200MHz | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 512KX36 | 3-STATE | 36 | 18874368 bit | 3.2 ns | COMMON | 2.38V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
![]() | 7014S12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 12 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
71T75802S133BG
Integrated Device Technology (IDT)
分类:Memory
71V016SA20BFGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V424L15PH8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS10PHG
Integrated Device Technology (IDT)
分类:Memory
IDT71T75802S133PF8
Integrated Device Technology (IDT)
分类:Memory
70T3519S133BFI8
Integrated Device Technology (IDT)
分类:Memory
70V9289L9PFI
Integrated Device Technology (IDT)
分类:Memory
709089L9PF
Integrated Device Technology (IDT)
分类:Memory
71V65603S150PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS10PHG8
Integrated Device Technology (IDT)
分类:Memory
71V65803S150PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3556S100BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71V35761S166PF
Integrated Device Technology (IDT)
分类:Memory
70V9089L9PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S200PFGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3556S100BQG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V424L12YI
Integrated Device Technology (IDT)
分类:Memory
70V9079L9PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S200PFI
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA45SOGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V416YL10PH8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416YL10Y
Integrated Device Technology (IDT)
分类:Memory
IDT71V3556S133BG8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S200PFGI8
Integrated Device Technology (IDT)
分类:Memory
7014S12PF
Integrated Device Technology (IDT)
分类:Memory
