品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

筛选水平

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71T75702S75BG
IDT71T75702S75BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

512KX36

3-STATE

36

0.04A

18874368 bit

7.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

71T75602S150BGGI
71T75602S150BGGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

BGA

119

235mA

150MHz

RAM, SDR, SRAM

2012

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

260

1

150MHz

30

INDUSTRIAL

Parallel

2.3MB

1

3.8 ns

3-STATE

19b

18 Mb

0.06A

COMMON

Synchronous

36b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

IDT71V416YS15PHI
IDT71V416YS15PHI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TSOP

44

170mA

RAM, SRAM - Asynchronous

Rail/Tube

2008

e0

no

3 (168 Hours)

44

85°C

-40°C

3.3V

DUAL

鸥翼

225

1

0.8mm

not_compliant

20

不合格

INDUSTRIAL

Parallel

1

15 ns

3-STATE

16

18b

4 Mb

0.02A

COMMON

Asynchronous

16b

3V

3.6V

3V

Non-RoHS Compliant

IDT71T75602S100PFI8
IDT71T75602S100PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2015

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.195mA

512KX36

3-STATE

36

0.06A

18874368 bit

5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V416VL15BEGI8
IDT71V416VL15BEGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TFBGA

YES

48

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2005

e1

4 (72 Hours)

48

3A991.B.2.A

锡银铜

85°C

-40°C

8542.32.00.41

3.3V

BOTTOM

BALL

260

1

0.75mm

30

S-PBGA-B48

不合格

INDUSTRIAL

Parallel

256KX16

16

4194304 bit

15 ns

3.6V

3V

1.2mm

9mm

9mm

符合RoHS标准

71T75602S150BGGI8
71T75602S150BGGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

BGA

119

235mA

150MHz

RAM, SDR, SRAM

2012

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

260

1

150MHz

30

INDUSTRIAL

Parallel

2.3MB

1

3.8 ns

3-STATE

19b

18 Mb

0.06A

COMMON

Synchronous

36b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

71T75602S100BGG8
71T75602S100BGG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

BGA

119

175mA

100MHz

RAM, SDR, SRAM

2012

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

流水线结构

2.5V

BOTTOM

BALL

260

1

100MHz

30

COMMERCIAL

Parallel

2.3MB

1

5 ns

3-STATE

19b

18 Mb

0.04A

COMMON

Synchronous

36b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

71256S100DB
71256S100DB
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

10 Weeks

通孔

CDIP

28

135mA

RAM, SRAM - Asynchronous

Military grade

Bulk

2011

e0

no

活跃

1 (Unlimited)

28

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

DUAL

240

1

2.54mm

5V

MILITARY

Parallel

1

100 ns

32KX8

3-STATE

15b

256 kb

0.02A

MIL-STD-883 Class B

COMMON

Asynchronous

8b

5.5V

4.5V

5.08mm

37.2mm

15.24mm

1.65mm

符合RoHS标准

含铅

70V9269S6PRF
70V9269S6PRF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

395mA

RAM, SDR, SRAM

Bulk

2008

e0

no

活跃

3 (168 Hours)

128

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

225

0.5mm

52.6MHz

COMMERCIAL

Parallel

32kB

2

6 ns

16KX16

3-STATE

14b

256 kb

0.005A

COMMON

Synchronous

16b

3V

3.6V

3V

20mm

14mm

1.4mm

符合RoHS标准

含铅

71256L25TDB
71256L25TDB
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

CDIP

28

130mA

RAM, SRAM - Asynchronous

Military grade

Bulk

2011

e0

no

活跃

1 (Unlimited)

28

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

DUAL

240

1

2.54mm

5V

MILITARY

Parallel

1

25 ns

32KX8

3-STATE

15b

256 kb

0.0005A

MIL-STD-883 Class B

COMMON

Asynchronous

8b

2V

5.5V

4.5V

5.08mm

37.72mm

7.62mm

3.56mm

符合RoHS标准

含铅

IDT70825S35PF
IDT70825S35PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

80

340mA

RAM

2009

e0

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

不合格

5V

COMMERCIAL

Parallel

2

35 ns

8KX16

16

26b

128 kb

0.015A

Asynchronous

16b

5.5V

4.5V

1.6mm

14mm

Non-RoHS Compliant

70V5388S100BG8
70V5388S100BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

BGA

272

240mA

RAM, SDR, SRAM

2008

e0

no

Discontinued

3 (168 Hours)

272

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

225

1

100MHz

20

COMMERCIAL

Parallel

128kB

4

10 ns

3-STATE

16b

1.1 Mb

0.015A

COMMON

Synchronous

18b

3.45V

3.15V

27mm

27mm

2mm

符合RoHS标准

含铅

71321SA55JI8
71321SA55JI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

190mA

RAM, SDR, SRAM

1997

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

5V

QUAD

J BEND

225

1

5V

INDUSTRIAL

Parallel

2kB

2

55 ns

3-STATE

22b

16 kb

0.03A

COMMON

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

71V632S5PFG8
71V632S5PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

200mA

RAM, SRAM

Tape & Reel

2015

e3

yes

Discontinued

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

ALSO REQUIRES 3.3V I/O SUPPLY

3.3V

QUAD

鸥翼

260

1

0.65mm

100MHz

30

COMMERCIAL

Parallel

1

5 ns

64KX32

3-STATE

16b

2 Mb

COMMON

Synchronous

32b

3.63V

3.135V

20mm

14mm

1.4mm

符合RoHS标准

无铅

IDT71T75602S150PFI
IDT71T75602S150PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2012

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.235mA

512KX36

3-STATE

36

0.06A

18874368 bit

3.8 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

70T651S12BF
70T651S12BF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

208

355mA

RAM, SDR, SRAM

Bulk

2005

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

2.5V

BOTTOM

BALL

225

1

0.8mm

COMMERCIAL

Parallel

1.1MB

2

12 ns

3-STATE

18b

9 Mb

0.01A

COMMON

Asynchronous

36b

2.6V

2.4V

1.5mm

15mm

15mm

1.4mm

符合RoHS标准

含铅

IDT71V016SA15YI
IDT71V016SA15YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

2007

e0

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.13mA

64KX16

3-STATE

16

0.01A

1048576 bit

15 ns

COMMON

3.15V

3.6V

3V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

IDT71V416VS12PH8
IDT71V416VS12PH8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2005

e0

no

3 (168 Hours)

44

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

0.8mm

not_compliant

20

R-PDSO-G44

不合格

COMMERCIAL

Parallel

256KX16

16

4194304 bit

12 ns

3.6V

3V

1.2mm

18.41mm

10.16mm

Non-RoHS Compliant

IDT71V424L10Y
IDT71V424L10Y
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

36

RAM, SRAM - Asynchronous

2009

e0

3 (168 Hours)

36

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

COMMERCIAL

Parallel

0.165mA

512KX8

3-STATE

8

0.01A

4194304 bit

10 ns

COMMON

3V

3.6V

3V

3.683mm

23.495mm

10.16mm

Non-RoHS Compliant

IDT71V424S15PHI
IDT71V424S15PHI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

2009

e0

no

3 (168 Hours)

44

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

0.8mm

not_compliant

20

R-PDSO-G44

不合格

3.3V

INDUSTRIAL

Parallel

0.16mA

512KX8

3-STATE

8

0.02A

4194304 bit

15 ns

COMMON

3V

3.6V

3V

1.2mm

18.41mm

10.16mm

Non-RoHS Compliant

IDT71T75602S150PFI8
IDT71T75602S150PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2012

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

150MHz

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.235mA

512KX36

3-STATE

36

0.06A

18874368 bit

3.8 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

71T75802S133PFG8
71T75802S133PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

TQFP

100

195mA

133MHz

RAM, SDR, SRAM

2012

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

2.5V

QUAD

鸥翼

260

1

0.65mm

133MHz

30

COMMERCIAL

Parallel

2.3MB

1

4.2 ns

3-STATE

20b

18 Mb

0.04A

COMMON

Synchronous

18b

2.38V

2.625V

2.375V

20mm

14mm

1.4mm

符合RoHS标准

无铅

IDT71T016SA20PHG
IDT71T016SA20PHG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

2008

e3

3 (168 Hours)

44

3A991.B.2.B

Matte Tin (Sn) - annealed

70°C

0°C

8542.32.00.41

2.5V

DUAL

鸥翼

未说明

1

0.8mm

unknown

未说明

R-PDSO-G44

不合格

2.5V

COMMERCIAL

Parallel

0.12mA

64KX16

3-STATE

16

0.015A

1048576 bit

20 ns

COMMON

2.38V

2.625V

2.375V

1.2mm

18.41mm

10.16mm

符合RoHS标准

7006L25J8
7006L25J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

68

220mA

RAM, SDR, SRAM

2009

e0

no

活跃

1 (Unlimited)

68

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

16kB

2

25 ns

16KX8

3-STATE

28b

128 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

24mm

24mm

3.63mm

符合RoHS标准

含铅

7016L25J8
7016L25J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

68

220mA

RAM, SDR, SRAM

2009

e0

no

活跃

1 (Unlimited)

68

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

18kB

2

25 ns

16KX9

3-STATE

14b

144 kb

0.005A

COMMON

Asynchronous

9b

5.5V

4.5V

4.57mm

24mm

24mm

3.63mm

符合RoHS标准

含铅