品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT71T75702S75BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.275mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 7.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 71T75602S150BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 235mA | 150MHz | RAM, SDR, SRAM | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | INDUSTRIAL | Parallel | 2.3MB | 1 | 3.8 ns | 3-STATE | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | IDT71V416YS15PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | 170mA | RAM, SRAM - Asynchronous | Rail/Tube | 2008 | e0 | no | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 15 ns | 3-STATE | 16 | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | IDT71T75602S100PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.195mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
![]() | IDT71V416VL15BEGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e1 | 4 (72 Hours) | 48 | 3A991.B.2.A | 锡银铜 | 85°C | -40°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 30 | S-PBGA-B48 | 不合格 | INDUSTRIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 1.2mm | 9mm | 9mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||
![]() | 71T75602S150BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 235mA | 150MHz | RAM, SDR, SRAM | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | INDUSTRIAL | Parallel | 2.3MB | 1 | 3.8 ns | 3-STATE | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | 71T75602S100BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 175mA | 100MHz | RAM, SDR, SRAM | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 2.3MB | 1 | 5 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | 71256S100DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | CDIP | 28 | 135mA | RAM, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 100 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.02A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 70V9269S6PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 395mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 0.5mm | 52.6MHz | COMMERCIAL | Parallel | 32kB | 2 | 6 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.005A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 71256L25TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 130mA | RAM, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 25 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.0005A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 5.08mm | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | IDT70825S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 80 | 340mA | RAM | 2009 | e0 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | 不合格 | 5V | COMMERCIAL | Parallel | 2 | 35 ns | 8KX16 | 16 | 26b | 128 kb | 0.015A | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | 70V5388S100BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 272 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | Discontinued | 3 (168 Hours) | 272 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | COMMERCIAL | Parallel | 128kB | 4 | 10 ns | 3-STATE | 16b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 27mm | 27mm | 2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71321SA55JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 190mA | RAM, SDR, SRAM | 1997 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71V632S5PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 200mA | RAM, SRAM | Tape & Reel | 2015 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | ALSO REQUIRES 3.3V I/O SUPPLY | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 1 | 5 ns | 64KX32 | 3-STATE | 16b | 2 Mb | COMMON | Synchronous | 32b | 3.63V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | IDT71T75602S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2012 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.235mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | 70T651S12BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 355mA | RAM, SDR, SRAM | Bulk | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | COMMERCIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | IDT71V016SA15YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 15 ns | COMMON | 3.15V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71V416VS12PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 12 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
![]() | IDT71V424L10Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 36 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.165mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 10 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71V424S15PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.16mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | IDT71T75602S150PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2012 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.235mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||
![]() | 71T75802S133PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 195mA | 133MHz | RAM, SDR, SRAM | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | 30 | COMMERCIAL | Parallel | 2.3MB | 1 | 4.2 ns | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | IDT71T016SA20PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e3 | 3 (168 Hours) | 44 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 未说明 | 1 | 0.8mm | unknown | 未说明 | R-PDSO-G44 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 20 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||
![]() | 7006L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 220mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 7016L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 220mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 25 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 |
IDT71T75702S75BG
Integrated Device Technology (IDT)
分类:Memory
71T75602S150BGGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V416YS15PHI
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S100PFI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL15BEGI8
Integrated Device Technology (IDT)
分类:Memory
71T75602S150BGGI8
Integrated Device Technology (IDT)
分类:Memory
71T75602S100BGG8
Integrated Device Technology (IDT)
分类:Memory
71256S100DB
Integrated Device Technology (IDT)
分类:Memory
70V9269S6PRF
Integrated Device Technology (IDT)
分类:Memory
71256L25TDB
Integrated Device Technology (IDT)
分类:Memory
IDT70825S35PF
Integrated Device Technology (IDT)
分类:Memory
70V5388S100BG8
Integrated Device Technology (IDT)
分类:Memory
71321SA55JI8
Integrated Device Technology (IDT)
分类:Memory
71V632S5PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S150PFI
Integrated Device Technology (IDT)
分类:Memory
70T651S12BF
Integrated Device Technology (IDT)
分类:Memory
IDT71V016SA15YI
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VS12PH8
Integrated Device Technology (IDT)
分类:Memory
IDT71V424L10Y
Integrated Device Technology (IDT)
分类:Memory
IDT71V424S15PHI
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S150PFI8
Integrated Device Technology (IDT)
分类:Memory
71T75802S133PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71T016SA20PHG
Integrated Device Technology (IDT)
分类:Memory
7006L25J8
Integrated Device Technology (IDT)
分类:Memory
7016L25J8
Integrated Device Technology (IDT)
分类:Memory
