品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT71T016SA20PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 20 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | 7005L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | 68 | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 20 ns | 26b | 64 kb | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V67903S80PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.21mA | 512KX18 | 3-STATE | 18 | 0.05A | 9437184 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | 5962-8687505XA | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 48 | Military grade | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | DUAL | 240 | 1 | 20 | Qualified | 5V | MILITARY | 2 | 0.16mA | 90 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.004A | 38535Q/M;38534H;883B | PARALLEL | COMMON | Asynchronous | 8b | MULTI-PORT SRAM | 2V | 5.5V | 4.5V | YES | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | IDT6116SA20SO8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.13mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 20 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | IDT71V416VL15BE8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e0 | 48 | 3A991.B.2.A | 锡铅 | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 30 | S-PBGA-B48 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 1.2mm | 9mm | 9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||
![]() | 71T75602S133PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 215mA | RAM, SRAM | Tape & Reel | 2015 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | INDUSTRIAL | Parallel | 1 | 4.2 ns | 3-STATE | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
![]() | 71V2546S133BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 310mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | OTHER | Parallel | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | 7026S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 305mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 70V9199L7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 45.45MHz | 20 | COMMERCIAL | Parallel | 128kB | 2 | 18 ns | 3-STATE | 34b | 1.1 Mb | COMMON | Synchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 7130SA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71T75802S166BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 265mA | RAM, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 166MHz | INDUSTRIAL | Parallel | 1 | 3.5 ns | 3-STATE | 20b | 18 Mb | 0.045A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | 71T75602S166BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 265mA | RAM, SRAM | Tape & Reel | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | INDUSTRIAL | Parallel | 1 | 3.5 ns | 3-STATE | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | IDT71V416VL15PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
![]() | 71V35761SA200BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | 200MHz | RAM, SDR, SRAM | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED | 3.3V | BOTTOM | BALL | 225 | 1 | 200MHz | INDUSTRIAL | Parallel | 512kB | 1 | 3.1 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 70121L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | 35 ns | 3-STATE | 22b | 18 kb | 0.005A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
![]() | 71T75602S150PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 235mA | 150MHz | RAM, SDR, SRAM | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 150MHz | 30 | INDUSTRIAL | Parallel | 2.3MB | 1 | 3.8 ns | 3-STATE | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | 70T631S12BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 395mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 12 ns | 3-STATE | 36b | 4 Mb | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
![]() | 71V65603S150BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | YES | 165 | 150MHz | RAM, SDR, SRAM | Tape & Reel | 2007 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 0.325mA | 6.7 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 7006S17PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 310mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 17 ns | 26b | 128 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V3578S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | no | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.305mA | 256KX18 | 3-STATE | 18 | 0.035A | 4718592 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | 7015L12JG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 68 | EAR99 | 哑光锡 | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 260 | 1 | COMMERCIAL | Parallel | 9kB | 2 | 12 ns | 8KX9 | 13b | 72 kb | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
![]() | IDT71V67602S150BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 150MHz | 20 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.05A | 9437184 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71P74804S167BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | QDR, RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 167MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.65mA | 1MX18 | 3-STATE | 18 | 0.3A | 18874368 bit | 0.5 ns | SEPARATE | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | 7140LA100PDG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | DIP | NO | 48 | RAM, SRAM | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 48 | EAR99 | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 260 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 2 | ASYNCHRONOUS | 0.11mA | 1KX8 | 3-STATE | 0.0015A | 8192 bit | 100 ns | COMMON | 2V | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 符合RoHS标准 | 无铅 |
IDT71T016SA20PH8
Integrated Device Technology (IDT)
分类:Memory
7005L20J8
Integrated Device Technology (IDT)
分类:Memory
IDT71V67903S80PF
Integrated Device Technology (IDT)
分类:Memory
5962-8687505XA
Integrated Device Technology (IDT)
分类:Memory
IDT6116SA20SO8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL15BE8
Integrated Device Technology (IDT)
分类:Memory
71T75602S133PFGI8
Integrated Device Technology (IDT)
分类:Memory
71V2546S133BGI
Integrated Device Technology (IDT)
分类:Memory
7026S25J8
Integrated Device Technology (IDT)
分类:Memory
70V9199L7PF
Integrated Device Technology (IDT)
分类:Memory
7130SA20PF8
Integrated Device Technology (IDT)
分类:Memory
71T75802S166BGI
Integrated Device Technology (IDT)
分类:Memory
71T75602S166BGGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL15PHG8
Integrated Device Technology (IDT)
分类:Memory
71V35761SA200BGI
Integrated Device Technology (IDT)
分类:Memory
70121L35J
Integrated Device Technology (IDT)
分类:Memory
71T75602S150PFGI
Integrated Device Technology (IDT)
分类:Memory
70T631S12BCI
Integrated Device Technology (IDT)
分类:Memory
71V65603S150BQG8
Integrated Device Technology (IDT)
分类:Memory
7006S17PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V3578S150PFI
Integrated Device Technology (IDT)
分类:Memory
7015L12JG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V67602S150BQ
Integrated Device Technology (IDT)
分类:Memory
IDT71P74804S167BQ
Integrated Device Technology (IDT)
分类:Memory
7140LA100PDG
Integrated Device Technology (IDT)
分类:Memory
