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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71T75902S80BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 95MHz | 0.27mA | 1MX18 | 3-STATE | 18 | 0.06A | 18874368 bit | 8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 71V3557S85PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 225mA | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 91MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 7132SA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 250mA | RAM, SDR, SRAM | 2004 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 20 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
 | 7054S25PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 300mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 5V | COMMERCIAL | Parallel | 4 | 25 ns | 3-STATE | 12b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7142SA100L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LCC | 48 | 190mA | RAM, SRAM | Bulk | 2010 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 100 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
 | 70V24L20PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 0.195mA | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 70V261L35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 120mA | RAM, SDR, SRAM | 2001 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 35 ns | 28b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
 | IDT71V124SA12PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G32 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.14mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 3V | 3.6V | 3.15V | 1.2mm | 20.95mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT71T75902S80BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 95MHz | 0.27mA | 1MX18 | 3-STATE | 18 | 0.06A | 18874368 bit | 8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 71V67703S75BQGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 1 | 256KX36 | 18b | 9 Mb | 7.5 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
 | 70V3399S133PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | TQFP | 128 | 400mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 133MHz | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 34b | 2.3 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 7025S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 310mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 8KX16 | 3-STATE | 13b | 128 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 6116SA20TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | CDIP | 24 | 130mA | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 24 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 2kB | 1 | 20 ns | 2KX8 | 3-STATE | 11b | 16 kb | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 32.51mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 70V08L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 220mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 20 ns | 64KX8 | 3-STATE | 16b | 512 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7025L35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 210mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | IDT71V016HSA15PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.B | 哑光锡 | 70°C | 0°C | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | COMMERCIAL | Parallel | 64KX16 | 16 | 1048576 bit | 15 ns | 3.6V | 3.15V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | 7024L17PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 17 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 70V18L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 205mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 72kB | 2 | 20 ns | 64KX9 | 3-STATE | 16b | 576 kb | 0.003A | COMMON | Asynchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7025L17J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 260mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 709379L9PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 430mA | RAM, SRAM | 2009 | 活跃 | 85°C | -40°C | 5V | 40MHz | Parallel | 2 | 20 ns | 15b | 576 kb | Synchronous | 18b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
 | 71V35761S166BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | 320mA | RAM, SRAM | Tape & Reel | 2009 | yes | Discontinued | 70°C | 0°C | 3.3V | 166MHz | Parallel | 1 | 3.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | 7028L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 340mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 128kB | 2 | 15 ns | 64KX16 | 3-STATE | 32b | 1 Mb | 0.003A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 71V016SA20BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 120mA | RAM, SDR, SRAM - Asynchronous | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 70T651S12BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 395mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | INDUSTRIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 18b | 9 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | IDT71V3556S133BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2007 | e1 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | unknown | 133MHz | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 符合RoHS标准 |
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IDT71T75902S80BGI
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S85PFG8
Integrated Device Technology (IDT)
分类:Memory
-
7132SA20J8
Integrated Device Technology (IDT)
分类:Memory
-
7054S25PRF8
Integrated Device Technology (IDT)
分类:Memory
-
7142SA100L48B
Integrated Device Technology (IDT)
分类:Memory
-
70V24L20PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V261L35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA12PHI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75902S80BGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S75BQGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3399S133PRF8
Integrated Device Technology (IDT)
分类:Memory
-
7025S15J8
Integrated Device Technology (IDT)
分类:Memory
-
6116SA20TDB
Integrated Device Technology (IDT)
分类:Memory
-
70V08L20PF
Integrated Device Technology (IDT)
分类:Memory
-
7025L35PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016HSA15PH
Integrated Device Technology (IDT)
分类:Memory
-
7024L17PF
Integrated Device Technology (IDT)
分类:Memory
-
70V18L20PF8
Integrated Device Technology (IDT)
分类:Memory
-
7025L17J8
Integrated Device Technology (IDT)
分类:Memory
-
709379L9PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V35761S166BGG8
Integrated Device Technology (IDT)
分类:Memory
-
7028L15PF
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA20BFI
Integrated Device Technology (IDT)
分类:Memory
-
70T651S12BFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S133BQG
Integrated Device Technology (IDT)
分类:Memory