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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V65603S150BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 325mA | RAM, SRAM | 2007 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | COMMERCIAL | Parallel | 1 | 3.8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | IDT71V25761YSA166BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1.27mm | not_compliant | 166MHz | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.32mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V25761YSA166BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 166MHz | 未说明 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.33mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 70V9359L7PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 330mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 45.45MHz | 20 | INDUSTRIAL | Parallel | 2 | 18 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.003A | COMMON | Synchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 71T75902S75PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | LQFP | 100 | RAM, SRAM | 2005 | 活跃 | 70°C | 0°C | 2.5V | Parallel | 1 | 20b | 18 Mb | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | 70T3339S133BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | 133MHz | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 40MHz | 20 | INDUSTRIAL | Parallel | 1.1MB | 2 | 15 ns | 3-STATE | 19b | 9 Mb | COMMON | Synchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7142SA55P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 155mA | RAM, SDR, SRAM | Bulk | 2010 | Discontinued | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 55 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | 709279L12PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | INDUSTRIAL | Parallel | 64kB | 2 | 50MHz | 0.305mA | 12 ns | 3-STATE | 30b | 512 kb | 0.005A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 7132LA35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 120mA | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT7164L25YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.15mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 25 ns | COMMON | 2V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | 71342LA35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 200mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 71V3558SA133BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 300mA | 133MHz | RAM, SDR, SRAM | 2006 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | IDT71V3556S166BQGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2007 | e1 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 1mm | unknown | 166MHz | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
 | 7008S55PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 310mA | RAM, SDR, SRAM | Tape & Reel | 2010 | 活跃 | 85°C | -40°C | 5V | Parallel | 64kB | 2 | 55 ns | 32b | 512 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
 | 71V65603S150BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 325mA | 150MHz | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 6.7 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71342LA35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V3556S166BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2007 | e1 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1mm | 166MHz | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.35mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||
 | 71V25761S183BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 340mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 183MHz | 20 | COMMERCIAL | Parallel | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V65602S133PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 4.2 ns | COMMON | 3V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | IDT71V25761YSA166BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1.27mm | not_compliant | 166MHz | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.33mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V016SA15Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.13mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 15 ns | COMMON | 3.15V | 3.6V | 3V | YES | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 71V65603S150BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 325mA | RAM, SRAM | Tape & Reel | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | COMMERCIAL | Parallel | 1 | 3.8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V3399S166BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 256 | 500mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 34b | 2.3 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 7025L25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 220mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 25 ns | 26b | 128 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | 70V3579S4BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 20 | COMMERCIAL | Parallel | 128kB | 2 | 7.5 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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71V65603S150BGG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761YSA166BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761YSA166BGI
Integrated Device Technology (IDT)
分类:Memory
-
70V9359L7PFI8
Integrated Device Technology (IDT)
分类:Memory
-
71T75902S75PFG
Integrated Device Technology (IDT)
分类:Memory
-
70T3339S133BCI
Integrated Device Technology (IDT)
分类:Memory
-
7142SA55P
Integrated Device Technology (IDT)
分类:Memory
-
709279L12PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7132LA35J
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164L25YI
Integrated Device Technology (IDT)
分类:Memory
-
71342LA35PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3558SA133BQG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S166BQGI8
Integrated Device Technology (IDT)
分类:Memory
-
7008S55PFI8
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S150BQ
Integrated Device Technology (IDT)
分类:Memory
-
71342LA35J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S166BQG8
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S183BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S133PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761YSA166BGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA15Y8
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S150BQ8
Integrated Device Technology (IDT)
分类:Memory
-
70V3399S166BC
Integrated Device Technology (IDT)
分类:Memory
-
7025L25PF8
Integrated Device Technology (IDT)
分类:Memory
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70V3579S4BF
Integrated Device Technology (IDT)
分类:Memory