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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V124SA20TY | Integrated Device Technology (IDT) | 数据表 | 5574 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.095mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||
 | 7134SA20P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 280mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V65603S133BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 320mA | RAM, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | INDUSTRIAL | Parallel | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.06A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V2546S133PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 1 | 0.65mm | not_compliant | 133MHz | R-PQFP-G100 | 不合格 | 2.53.3V | OTHER | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | IDT71T75802S166PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 245mA | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 3.5 ns | 3-STATE | 18 | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 70V9279S7PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 335mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 45.45MHz | 20 | COMMERCIAL | Parallel | 64kB | 2 | 7 ns | 3-STATE | 30b | 512 kb | 0.005A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 7016L35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 210mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 35 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | IDT71V2546S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 3.8 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71V3577S85PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 87MHz | 0.19mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
 | 71V416L12BEI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 170mA | RAM, SDR, SRAM - Asynchronous | 2014 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70P3519S200BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 256 | RAM, SRAM | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 256 | 3A991 | 锡银铜 | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 200MHz | 30 | COMMERCIAL | Parallel | 2 | 18b | 9 Mb | 10 ns | 1.9V | 1.7V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | IDT71V2556S100PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2010 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.26mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 70V9279L7PRFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 128 | RAM, SDR, SRAM | Bulk | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 128 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 64kB | 2 | 83MHz | 7 ns | 3-STATE | 30b | 512 kb | 0.003A | COMMON | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 7006L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 240mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 20 ns | 28b | 128 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
 | IDT70V7339S166DD | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TQFP | YES | 144 | RAM, SRAM | 2008 | e0 | 4 (72 Hours) | 144 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | not_compliant | 166MHz | 30 | S-PQFP-G144 | 不合格 | 2.5/3.33.3V | COMMERCIAL | Parallel | 2 | SYNCHRONOUS | 0.79mA | 512KX18 | 3-STATE | 18 | 0.03A | 9437184 bit | 12 ns | COMMON | 3.15V | 3.45V | 3.15V | 1.6mm | 20mm | 20mm | Non-RoHS Compliant | |||||||||||||||||||
 | 71V3556S100PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | 100MHz | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | IDT71V35761S200PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.1 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 7130LA35TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 120mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | IDT71P71604S167BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR, RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 167MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.6mA | 512KX36 | 3-STATE | 36 | 0.275A | 18874368 bit | 0.5 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V416L12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.17mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 70V27L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 225mA | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 64kB | 2 | 15 ns | 30b | 512 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
 | IDT71V65602S150PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 325mA | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 3.8 ns | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3V | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 7140SA100J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 155mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 100 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
 | 70V08S35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 195mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 35 ns | 64KX8 | 3-STATE | 16b | 512 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 70V07L25PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 140mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 不合格 | INDUSTRIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 30b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 |
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IDT71V124SA20TY
Integrated Device Technology (IDT)
分类:Memory
-
7134SA20P
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S133BGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V2546S133PFI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75802S166PF
Integrated Device Technology (IDT)
分类:Memory
-
70V9279S7PRF8
Integrated Device Technology (IDT)
分类:Memory
-
7016L35PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V2546S150PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577S85PFI8
Integrated Device Technology (IDT)
分类:Memory
-
71V416L12BEI8
Integrated Device Technology (IDT)
分类:Memory
-
70P3519S200BCG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V2556S100PFI
Integrated Device Technology (IDT)
分类:Memory
-
70V9279L7PRFG
Integrated Device Technology (IDT)
分类:Memory
-
7006L20J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT70V7339S166DD
Integrated Device Technology (IDT)
分类:Memory
-
71V3556S100PFG8
Integrated Device Technology (IDT)
分类:Memory
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IDT71V35761S200PF
Integrated Device Technology (IDT)
分类:Memory
-
7130LA35TF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P71604S167BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416L12Y
Integrated Device Technology (IDT)
分类:Memory
-
70V27L15PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S150PF
Integrated Device Technology (IDT)
分类:Memory
-
7140SA100J8
Integrated Device Technology (IDT)
分类:Memory
-
70V08S35PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V07L25PFI
Integrated Device Technology (IDT)
分类:Memory