品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

筛选水平

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71V124SA10YI8
IDT71V124SA10YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.15mA

128KX8

3-STATE

8

0.01A

1048576 bit

10 ns

COMMON

3.15V

3.6V

3.15V

3.683mm

20.955mm

10.16mm

Non-RoHS Compliant

70V3589S133DRGI
70V3589S133DRGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PQFP

208

480mA

RAM, SDR, SRAM

Bulk

2010

e3

yes

活跃

3 (168 Hours)

208

Matte Tin (Sn)

85°C

-40°C

PIPELINED OR FLOW-THROUGH ARCHITECTURE

3.3V

QUAD

鸥翼

1

0.5mm

133MHz

INDUSTRIAL

Parallel

256kB

2

25 ns

64KX36

3-STATE

32b

2.3 Mb

0.04A

COMMON

Synchronous

36b

3.45V

3.15V

4.1mm

28mm

28mm

3.5mm

符合RoHS标准

无铅

71V35761SA183BGGI
71V35761SA183BGGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

BGA

119

350mA

183MHz

RAM, SDR, SRAM

2009

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

3.3V

BOTTOM

BALL

260

1

183MHz

30

INDUSTRIAL

Parallel

512kB

1

3.3 ns

3-STATE

17b

4.5 Mb

0.035A

COMMON

Synchronous

36b

3.465V

3.135V

14mm

22mm

2.15mm

符合RoHS标准

无铅

70125L35J8
70125L35J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

PLCC

YES

52

RAM, SDR, SRAM

Tape & Reel

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

2.3kB

2

35 ns

3-STATE

22b

18 kb

0.015A

COMMON

2V

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71V65602S133PFI
IDT71V65602S133PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

133MHz

20

R-PQFP-G100

不合格

2.53.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.32mA

256KX36

3-STATE

36

0.06A

9437184 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V124SA12TYI8
IDT71V124SA12TYI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

no

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.14mA

128KX8

3-STATE

8

0.01A

1048576 bit

12 ns

COMMON

3V

3.6V

3.15V

3.7592mm

20.955mm

7.62mm

Non-RoHS Compliant

71V432S5PFGI8
71V432S5PFGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TQFP

YES

100

100MHz

RAM, SDR, SRAM

2013

e3

yes

Discontinued

3 (168 Hours)

100

Matte Tin (Sn) - annealed

85°C

-40°C

流水线结构

3.3V

QUAD

鸥翼

260

1

0.65mm

30

INDUSTRIAL

Parallel

128kB

1

0.2mA

5 ns

32KX32

3-STATE

15b

1 Mb

COMMON

3.63V

3.135V

20mm

14mm

1.4mm

符合RoHS标准

无铅

IDT71V65602S150BG
IDT71V65602S150BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

150MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.325mA

256KX36

3-STATE

36

0.04A

9437184 bit

3.8 ns

COMMON

3V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71V016SA15YI8
IDT71V016SA15YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

no

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.13mA

64KX16

3-STATE

16

0.01A

1048576 bit

15 ns

COMMON

3.15V

3.6V

3.15V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

IDT71P71804S250BQ8
IDT71P71804S250BQ8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

DDR, RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

250MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.65mA

1MX18

3-STATE

18

0.325A

18874368 bit

0.45 ns

COMMON

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

71T75802S150BGI
71T75802S150BGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

BGA

119

235mA

RAM, SRAM

2012

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

225

1

150MHz

INDUSTRIAL

Parallel

1

3.8 ns

3-STATE

20b

18 Mb

0.045A

COMMON

Synchronous

18b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

含铅

IDT71V67602S150PFI
IDT71V67602S150PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

325mA

RAM, SRAM

2009

e0

3 (168 Hours)

100

85°C

-40°C

流水线结构

3.3V

QUAD

鸥翼

240

1

0.65mm

150MHz

20

不合格

INDUSTRIAL

Parallel

1

3.8 ns

256KX36

3-STATE

36

18b

9 Mb

0.05A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

符合RoHS标准

IDT71V65602S133PFI8
IDT71V65602S133PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

100

3A991.B.2.A

锡铅

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

1

0.65mm

133MHz

R-PQFP-G100

不合格

INDUSTRIAL

Parallel

SYNCHRONOUS

256KX36

36

9437184 bit

4.2 ns

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

71V30L25TFG8
71V30L25TFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

LQFP

64

120mA

RAM, SDR, SRAM

2009

e3

yes

活跃

3 (168 Hours)

64

EAR99

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

QUAD

FLAT

260

1

0.5mm

30

COMMERCIAL

Parallel

1kB

2

25 ns

1KX8

3-STATE

10b

8 kb

0.003A

COMMON

Asynchronous

8b

3V

3.6V

3V

10mm

10mm

1.4mm

符合RoHS标准

无铅

70T651S12DR
70T651S12DR
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PQFP

208

355mA

RAM, SDR, SRAM

Bulk

2005

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn/Pb)

70°C

0°C

2.5V

QUAD

鸥翼

225

1

0.5mm

20

COMMERCIAL

Parallel

1.1MB

2

12 ns

3-STATE

18b

9 Mb

0.01A

COMMON

Asynchronous

36b

2.6V

2.4V

4.1mm

28mm

28mm

3.5mm

符合RoHS标准

含铅

70T651S15BF8
70T651S15BF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

208

305mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

2.5V

BOTTOM

BALL

225

1

0.8mm

COMMERCIAL

Parallel

2

15 ns

3-STATE

18b

9 Mb

0.01A

COMMON

Asynchronous

36b

2.6V

2.4V

1.5mm

15mm

15mm

1.4mm

符合RoHS标准

含铅

71V3556SA100BQG8
71V3556SA100BQG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

11 Weeks

YES

165

RAM, SRAM

Tape & Reel

2015

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

3.3V

BOTTOM

BALL

260

1

100MHz

COMMERCIAL

Parallel

1

17b

4.5 Mb

5 ns

3.465V

15mm

13mm

1.2mm

符合RoHS标准

无铅

7008L35PF
7008L35PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

255mA

RAM, SDR, SRAM

Bulk

2010

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

64kB

2

35 ns

64KX8

3-STATE

32b

512 kb

0.005A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V657S12BCI8
70V657S12BCI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

515mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

85°C

-40°C

3.3V

BOTTOM

BALL

225

1

1mm

INDUSTRIAL

Parallel

2

12 ns

3-STATE

15b

1.1 Mb

0.015A

COMMON

Asynchronous

36b

3.45V

3.15V

1.5mm

17mm

17mm

1.4mm

符合RoHS标准

含铅

7164L20TDB
7164L20TDB
Integrated Device Technology (IDT) 数据表

58 In Stock

-

最小起订量: 1

最小包装量: 1

通孔

CDIP

28

100mA

RAM, SRAM - Asynchronous

Military grade

Bulk

2007

e0

no

活跃

1 (Unlimited)

28

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

DUAL

240

1

2.54mm

5V

MILITARY

Parallel

1

20 ns

8KX8

3-STATE

13b

64 kb

0.0002A

MIL-STD-883 Class B

COMMON

Asynchronous

8b

2V

5.5V

4.5V

37.72mm

7.62mm

3.56mm

符合RoHS标准

含铅

IDT71V124SA10YI
IDT71V124SA10YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

2007

e0

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.15mA

128KX8

3-STATE

8

0.01A

1048576 bit

10 ns

COMMON

3.15V

3.6V

3.15V

3.683mm

20.955mm

10.16mm

Non-RoHS Compliant

70V24L15PF8
70V24L15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

185mA

RAM, SDR, SRAM

2004

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

8kB

2

15 ns

4KX16

3-STATE

24b

64 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V256SA10Y8
IDT71V256SA10Y8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

no

3 (168 Hours)

28

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

COMMERCIAL

Parallel

1

0.1mA

32KX8

3-STATE

8

0.002A

262144 bit

10 ns

COMMON

3V

3.6V

3V

YES

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

IDT71V65602S133BG8
IDT71V65602S133BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

133MHz

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

256KX36

3-STATE

36

0.04A

9437184 bit

4.2 ns

COMMON

3V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

7130LA25J
7130LA25J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

170mA

RAM, SDR, SRAM

1997

活跃

70°C

0°C

5V

Parallel

1kB

2

25 ns

20b

8 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅