品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 7027S25PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 345mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | INDUSTRIAL | Parallel | 64kB | 2 | 25 ns | 3-STATE | 15b | 512 kb | 0.03A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 70V9179L9PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 40MHz | 20 | COMMERCIAL | Parallel | 36kB | 2 | 9 ns | 3-STATE | 15b | 288 kb | 0.003A | COMMON | Synchronous | 9b | 3V | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71256SA15YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | e0 | no | 28 | EAR99 | 锡铅 | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | INDUSTRIAL | Parallel | 1 | 32KX8 | 3-STATE | 8 | 262144 bit | 15 ns | 5.5V | 4.5V | YES | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
![]() | IDT71V2558S200PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.4mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 3.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 70V657S12DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 465mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 128kB | 2 | 12 ns | 3-STATE | 30b | 1.1 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 7035L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 20 ns | 8KX8 | 3-STATE | 13b | 144 kb | 0.0015A | COMMON | Asynchronous | 18b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 70V9199L12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 200mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | COMMERCIAL | Parallel | 2 | 25 ns | 3-STATE | 34b | 1.1 Mb | COMMON | Synchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 7140SA100P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 155mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 100 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 709269L9PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 350mA | RAM, SDR, SRAM | Bulk | 2009 | 活跃 | 70°C | 0°C | 5V | 40MHz | Parallel | 32kB | 2 | 9 ns | 28b | 256 kb | Synchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 70V05S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 200mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 71V25761S166BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 330mA | 166MHz | RAM, SDR, SRAM | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 166MHz | 20 | 330mA | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 71V016SA12PHGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 160mA | RAM, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
![]() | 70V9269S7PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 335mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 45.45MHz | COMMERCIAL | Parallel | 32kB | 2 | 7 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.005A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 71V321S35TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 125mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | IDT71V124SA15TYI | Integrated Device Technology (IDT) | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.12mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 15 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | IDT71024S15YI | Integrated Device Technology (IDT) | 数据表 | 450 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 155mA | RAM, SRAM - Asynchronous | Rail/Tube | 2010 | e0 | no | 3 (168 Hours) | 32 | 85°C | -40°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 15 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | YES | 3.683mm | 20.96mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
![]() | 70V08L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 220mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 20 ns | 64KX8 | 3-STATE | 16b | 512 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 7132SA100J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 155mA | RAM, SDR, SRAM | 2004 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 100 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | 7140SA25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 2.96261g | 220mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 110mA | 5V | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.63mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | IDT71V2558S166BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | 166MHz | 未说明 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.35mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | IDT6116LA35SO | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOIC | 24 | 95mA | RAM, SRAM - Asynchronous | Rail/Tube | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | DUAL | 鸥翼 | 225 | 1 | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 35 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 2.65mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | IDT71V65802S100PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 512KX18 | 3-STATE | 18 | 0.04A | 9437184 bit | 5 ns | COMMON | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | IDT71V25761YSA166BQGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | RAM, SRAM | 2009 | 3A991.B.2.A | 85°C | -40°C | 8542.32.00.41 | unknown | 166MHz | Parallel | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT70824S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 80 | RAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | S-PQFP-G80 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.36mA | 4KX16 | 16 | 0.015A | 65536 bit | 25 ns | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | 70V07L25PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 140mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 不合格 | INDUSTRIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 15b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 |
7027S25PFI8
Integrated Device Technology (IDT)
分类:Memory
70V9179L9PF
Integrated Device Technology (IDT)
分类:Memory
IDT71256SA15YI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V2558S200PF
Integrated Device Technology (IDT)
分类:Memory
70V657S12DR
Integrated Device Technology (IDT)
分类:Memory
7035L20PF8
Integrated Device Technology (IDT)
分类:Memory
70V9199L12PF8
Integrated Device Technology (IDT)
分类:Memory
7140SA100P
Integrated Device Technology (IDT)
分类:Memory
709269L9PF
Integrated Device Technology (IDT)
分类:Memory
70V05S20J8
Integrated Device Technology (IDT)
分类:Memory
71V25761S166BGI
Integrated Device Technology (IDT)
分类:Memory
71V016SA12PHGI
Integrated Device Technology (IDT)
分类:Memory
70V9269S7PRF8
Integrated Device Technology (IDT)
分类:Memory
71V321S35TF
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA15TYI
Integrated Device Technology (IDT)
分类:Memory
IDT71024S15YI
Integrated Device Technology (IDT)
分类:Memory
70V08L20PF8
Integrated Device Technology (IDT)
分类:Memory
7132SA100J8
Integrated Device Technology (IDT)
分类:Memory
7140SA25J8
Integrated Device Technology (IDT)
分类:Memory
IDT71V2558S166BG8
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA35SO
Integrated Device Technology (IDT)
分类:Memory
IDT71V65802S100PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V25761YSA166BQGI
Integrated Device Technology (IDT)
分类:Memory
IDT70824S25PF8
Integrated Device Technology (IDT)
分类:Memory
70V07L25PFI8
Integrated Device Technology (IDT)
分类:Memory
