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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7024S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 84 | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V3589S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V3556SA100BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 250mA | 100MHz | RAM, SDR, SRAM | 2006 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 7006S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 71V3556SA166BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 350mA | 166MHz | RAM, SDR, SRAM | 2006 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | IDT71V424YL15PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2009 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.145mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 70V9269S15PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 220mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 0.5mm | 28.5MHz | COMMERCIAL | Parallel | 32kB | 2 | 15 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.005A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT70824L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 80 | RAM | 2009 | e0 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | S-PQFP-G80 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.33mA | 4KX16 | 16 | 0.0015A | 65536 bit | 20 ns | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 7028L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 340mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 128kB | 2 | 15 ns | 64KX16 | 3-STATE | 32b | 1 Mb | 0.003A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 7054L20PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 250mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 5V | COMMERCIAL | Parallel | 4 | 20 ns | 3-STATE | 12b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 70V08S20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 255mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 20 ns | 64KX8 | 3-STATE | 16b | 512 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71321LA45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 45 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | 70V9359L9PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 18kB | 2 | 9 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.003A | COMMON | 3V | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7038L20PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 360mA | RAM, SDR, SRAM | Bulk | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | INDUSTRIAL | Parallel | 128kB | 2 | 20 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.003A | COMMON | Asynchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 71V547S100PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 210mA | 66MHz | RAM, SDR, SRAM | Tape & Reel | 2015 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | FLAT | 260 | 1 | 0.635mm | 66.6MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 10 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | IDT71V3556S133BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 133MHz | 未说明 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | IDT71T75902S75PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.275mA | 1MX18 | 3-STATE | 18 | 0.04A | 18874368 bit | 7.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
 | 70T3589S133BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 370mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 2 | 15 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71T75902S80BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 95MHz | 0.27mA | 1MX18 | 3-STATE | 18 | 0.06A | 18874368 bit | 8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | 71V3557S85PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 225mA | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 91MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | IDT71T75902S80BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 95MHz | 0.27mA | 1MX18 | 3-STATE | 18 | 0.06A | 18874368 bit | 8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 7008S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 325mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 20 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 7024L35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 210mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
 | 71V25761S200BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 360mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 200MHz | 20 | COMMERCIAL | Parallel | 1 | 3.1 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V25761S166PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.32mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant |
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7024S20J8
Integrated Device Technology (IDT)
分类:Memory
-
70V3589S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA100BGG
Integrated Device Technology (IDT)
分类:Memory
-
7006S55PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA166BGG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424YL15PH
Integrated Device Technology (IDT)
分类:Memory
-
70V9269S15PRF
Integrated Device Technology (IDT)
分类:Memory
-
IDT70824L20PF
Integrated Device Technology (IDT)
分类:Memory
-
7028L15PF8
Integrated Device Technology (IDT)
分类:Memory
-
7054L20PRF8
Integrated Device Technology (IDT)
分类:Memory
-
70V08S20PF
Integrated Device Technology (IDT)
分类:Memory
-
71321LA45J8
Integrated Device Technology (IDT)
分类:Memory
-
70V9359L9PF
Integrated Device Technology (IDT)
分类:Memory
-
7038L20PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71V547S100PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S133BGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75902S75PF8
Integrated Device Technology (IDT)
分类:Memory
-
70T3589S133BC
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75902S80BGI
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S85PFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75902S80BGI8
Integrated Device Technology (IDT)
分类:Memory
-
7008S20J8
Integrated Device Technology (IDT)
分类:Memory
-
7024L35PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S200BG8
Integrated Device Technology (IDT)
分类:Memory
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IDT71V25761S166PF8
Integrated Device Technology (IDT)
分类:Memory