品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 待机电流-最大值 | 记忆密度 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 组织的记忆 | 长度 | 宽度 | |||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 5962-9150812MYA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71T75802S100PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | IDT, Integrated Device Technology Inc | Bulk | 71T75802 | 活跃 | Volatile | -40°C ~ 85°C (TA) | - | SRAM - Synchronous, SDR (ZBT) | 2.375V ~ 2.625V | 18Mbit | 100 MHz | 5 ns | SRAM | Parallel | - | 1M x 18 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8687521XA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8687507UA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-9227101MXA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V124SA12YG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT7130SA55J | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V9289L9PFGI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Preliminary | SRAM - Dual Port, Synchronous | 3 V ~ 3.6 V | 1Mb (64K x 16) | 9ns | SRAM | Parallel | -- | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V9289L9PFGI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tape & Reel (TR) | -- | Preliminary | SRAM - Dual Port, Synchronous | 3 V ~ 3.6 V | 1Mb (64K x 16) | 9ns | SRAM | Parallel | -- | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V256SA15YG8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | 28 | PLASTIC/EPOXY | SOJ28,.34 | 30 | 15 ns | 70 °C | 有 | IDT71V256SA15YG8 | 32768 words | 3.3 V | SOJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.36 | SOJ | SOJ, SOJ28,.34 | 小概要 | 3 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 260 | 1 | 1.27 mm | compliant | R-PDSO-J28 | 不合格 | 32000 | 3.3 V | COMMERCIAL | 1 | ASYNCHRONOUS | 0.085 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | 缓存SRAM | 3 V | 3.6 V | 3 V | YES | 17.9324 mm | 7.5184 mm | ||||||||||||||||||||||||||
![]() | 71V3558S200PFG8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | FLATPACK, LOW PROFILE | 3 | 256000 | PLASTIC/EPOXY | QFP100,.63X.87 | PKG100 | 30 | 3.2 ns | 70 °C | 有 | 71V3558S200PFG8 | 200 MHz | 262144 words | 3.3 V | LQFP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.24 | TQFP | 集成设备技术 | e3 | 有 | 3A991 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.65 mm | unknown | R-PQFP-G100 | 不合格 | 14 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TQFP-100 | 3.3 V | COMMERCIAL | SYNCHRONOUS | 0.4 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 3.465 V | 3.135 V | 20 mm | 14 mm | |||||||||||||||||||||||||
![]() | 70V9289L6PRF8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 128 | 128 | 5.83 | INTEGRATED DEVICE TECHNOLOGY INC | Obsolete | Integrated Device Technology Inc | RECTANGULAR | LFQFP | 3.3 V | 65536 words | 100 MHz | 70V9289L6PRF8 | 无 | 70 °C | 15 ns | 未说明 | PK128 | QFP128,.63X.87,20 | PLASTIC/EPOXY | 64000 | 3 | FLATPACK, LOW PROFILE, FINE PITCH | LFQFP, QFP128,.63X.87,20 | 集成设备技术 | e0 | 无 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 225 | 1 | 0.5 mm | not_compliant | R-PQFP-G128 | 不合格 | TQFP | 3.3 V | COMMERCIAL | 2 | SYNCHRONOUS | 0.28 mA | 64KX16 | 3-STATE | 1.6 mm | 16 | 0.002 A | 1048576 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 3.6 V | 3 V | 20 mm | 14 mm | |||||||||||||||||||||||
![]() | 70V27L25PFG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | PLASTIC/EPOXY | QFP100,.63SQ,20 | QFP | 5.19 | INTEGRATED DEVICE TECHNOLOGY INC | 活跃 | Integrated Device Technology Inc | SQUARE | QFP | 3.3 V | 32768 words | 70V27L25PFG | 有 | 70 °C | 25 ns | 30 | QFP, QFP100,.63SQ,20 | FLATPACK | 3 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.5 mm | compliant | S-PQFP-G100 | 不合格 | 32000 | 3.3 V | COMMERCIAL | 2 | ASYNCHRONOUS | 0.21 mA | 32KX16 | 3-STATE | 16 | 0.003 A | 524288 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3 V | 3.6 V | 3 V | ||||||||||||||||||||||||||||||
![]() | 71V256SA10Y | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | PLASTIC/EPOXY | SOJ28,.34 | 未说明 | 10 ns | 70 °C | 无 | 71V256SA10Y | 32768 words | 3.3 V | SOJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.26 | SOJ, SOJ28,.34 | 小概要 | 3 | e0 | 无 | Tin/Lead (Sn85Pb15) | SRAMs | CMOS | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | R-PDSO-J28 | 不合格 | 32000 | 3.3 V | COMMERCIAL | ASYNCHRONOUS | 0.1 mA | 32KX8 | 3-STATE | 8 | 0.002 A | 262144 bit | PARALLEL | COMMON | 缓存SRAM | 3 V | 3.6 V | 3 V | |||||||||||||||||||||||||||||||||||
![]() | IDT70V3319S133BC | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 256 | 256 | 256000 | PLASTIC/EPOXY | BGA256,16X16,40 | 20 | 15 ns | 70 °C | 无 | IDT70V3319S133BC | 133 MHz | 262144 words | 3.3 V | LBGA | SQUARE | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.13 | BGA | LBGA, BGA256,16X16,40 | GRID ARRAY, LOW PROFILE | e0 | 无 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 225 | 1 | 1 mm | not_compliant | S-PBGA-B256 | 不合格 | 3 | 2.5/3.3,3.3 V | COMMERCIAL | 2 | SYNCHRONOUS | 0.4 mA | 256KX18 | 3-STATE | 1.7 mm | 18 | 0.03 A | 4718592 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 3.15 V | 3.45 V | 3.15 V | 17 mm | 17 mm | |||||||||||||||||||||||||
![]() | 71342SA70JI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | Volatile | -40°C ~ 85°C (TA) | Tube | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 32Kb (4K x 8) | 70ns | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7024S55PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 64Kb (4K x 16) | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V3559S85BGI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V256SA20PZGI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V321L35JGI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | IDT, Integrated Device Technology Inc | Volatile | Bulk | 71V321L | 活跃 | -40°C ~ 85°C (TA) | Tube | -- | 活跃 | SRAM - Dual Port, Asynchronous | 3 V ~ 3.6 V | 16Kb (2K x 8) | 35ns | SRAM | Parallel | 35ns | 2K x 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7130LA55PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 64-LQFP | 64-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 8Kb (1K x 8) | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V9369L9PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Synchronous | 3 V ~ 3.6 V | 288Kb (16K x 18) | 9ns | SRAM | Parallel | -- | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V3578S133PF | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | IDT, Integrated Device Technology Inc | Bulk | 71V3578 | 活跃 | Volatile | 0°C ~ 70°C (TA) | - | SRAM - Synchronous, SDR | 3.135V ~ 3.465V | 4.5Mbit | 133 MHz | 4.2 ns | SRAM | Parallel | - | 256K x 18 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-9150810MYA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V424S12YI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | 36-SOJ | IDT, Integrated Device Technology Inc | Bulk | 71V424 | Obsolete | Volatile | -40°C ~ 85°C (TA) | - | SRAM - Asynchronous | 3V ~ 3.6V | 4Mbit | 12 ns | SRAM | Parallel | 12ns | 512K x 8 |
5962-9150812MYA
Integrated Device Technology
分类:Memory
71T75802S100PFI
Integrated Device Technology
分类:Memory
5962-8687521XA
Integrated Device Technology
分类:Memory
5962-8687507UA
Integrated Device Technology
分类:Memory
5962-9227101MXA
Integrated Device Technology
分类:Memory
IDT71V124SA12YG
Integrated Device Technology
分类:Memory
IDT7130SA55J
Integrated Device Technology
分类:Memory
70V9289L9PFGI
Integrated Device Technology
分类:Memory
70V9289L9PFGI8
Integrated Device Technology
分类:Memory
IDT71V256SA15YG8
Integrated Device Technology
分类:Memory
71V3558S200PFG8
Integrated Device Technology
分类:Memory
70V9289L6PRF8
Integrated Device Technology
分类:Memory
70V27L25PFG
Integrated Device Technology
分类:Memory
71V256SA10Y
Integrated Device Technology
分类:Memory
IDT70V3319S133BC
Integrated Device Technology
分类:Memory
71342SA70JI
Integrated Device Technology
分类:Memory
7024S55PFI
Integrated Device Technology
分类:Memory
71V3559S85BGI8
Integrated Device Technology
分类:Memory
71V256SA20PZGI8
Integrated Device Technology
分类:Memory
71V321L35JGI
Integrated Device Technology
分类:Memory
7130LA55PFI
Integrated Device Technology
分类:Memory
70V9369L9PFI
Integrated Device Technology
分类:Memory
71V3578S133PF
Integrated Device Technology
分类:Memory
5962-9150810MYA
Integrated Device Technology
分类:Memory
71V424S12YI
Integrated Device Technology
分类:Memory
