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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V35761S183BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 183MHz | 20 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.35mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 3.3 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT6116SA35TPI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.1mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 35 ns | COMMON | 4.5V | 5.5V | 4.5V | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | IDT71P72604S200BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 165 | 950mA | QDR, RAM, SRAM | 2006 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 200MHz | 20 | 不合格 | COMMERCIAL | Parallel | 2 | 450 ps | 3-STATE | 36 | 18b | 18 Mb | SEPARATE | Synchronous | 36b | 1.9V | 1.7V | 15mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||
 | 70P3519S166BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 256 | RAM, SRAM | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 256 | 3A991 | 锡银铜 | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 166MHz | 30 | INDUSTRIAL | Parallel | 2 | 18b | 9 Mb | 1.9V | 1.7V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | 71V3577S75BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | FBGA | 165 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | 225 | 117MHz | Parallel | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
 | 71V3577S75PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 265mA | 117MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 哑光锡 | 85°C | -40°C | 3.3V | 260 | 117MHz | Parallel | 512kB | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||
 | IDT71V35761SA183BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 183MHz | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.34mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.3 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | 71V3559S80PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 95MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | IDT71256SA20Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | 145mA | RAM, SRAM - Asynchronous | 卷带 | 2010 | e0 | no | 28 | EAR99 | 锡铅 | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 20 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | YES | 3.556mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||
 | IDT71V35761SA166BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 166MHz | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.32mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71V3558S166BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 166MHz | 未说明 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.36mA | 256KX18 | 3-STATE | 18 | 0.045A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71P74604S200BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 165 | 950mA | QDR, RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 200MHz | 20 | 不合格 | COMMERCIAL | Parallel | 2 | 450 ps | 3-STATE | 36 | 17b | 18 Mb | 0.335A | SEPARATE | Synchronous | 36b | 1.9V | 1.7V | 15mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | IDT71T75802S200PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 200MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.275mA | 1MX18 | 3-STATE | 18 | 0.04A | 18874368 bit | 3.2 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||||||
 | IDT71V35761S200PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 3.1 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | IDT71P74604S250BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | QDR, RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 250MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 1.1mA | 512KX36 | 3-STATE | 36 | 0.375A | 18874368 bit | 0.45 ns | SEPARATE | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | 71T75802S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 195mA | RAM, SRAM | Tape & Reel | 2012 | 活跃 | 70°C | 0°C | 2.5V | 133MHz | Parallel | 1 | 4.2 ns | 20b | 18 Mb | Synchronous | 18b | 2.625V | 2.375V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
 | IDT71V2556S166PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2010 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT71V124SA10Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.145mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.683mm | 20.955mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | IDT71V65903S85PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 90MHz | 0.06mA | 512KX18 | 3-STATE | 18 | 0.06A | 9437184 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 7130LA55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 110mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 55 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||
 | 70V25S15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 215mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 7035L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 8KX18 | 3-STATE | 13b | 144 kb | 0.0015A | COMMON | Asynchronous | 18b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 7130SA20TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 250mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70T653MS15BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 600mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 38b | 18 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
 | 71V67603S150PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 325mA | 150MHz | RAM, SDR, SRAM | 2009 | 活跃 | 85°C | -40°C | 3.3V | 150MHz | 325mA | Parallel | 1.1MB | 1 | 3.8 ns | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 1.4mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 |
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IDT71V35761S183BQI
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116SA35TPI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P72604S200BQ
Integrated Device Technology (IDT)
分类:Memory
-
70P3519S166BCGI
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S75BQI8
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S75PFGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V35761SA183BQ
Integrated Device Technology (IDT)
分类:Memory
-
71V3559S80PFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71256SA20Y8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V35761SA166BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3558S166BGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P74604S200BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75802S200PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V35761S200PFI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P74604S250BQ
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S133BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V2556S166PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA10Y8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65903S85PFI
Integrated Device Technology (IDT)
分类:Memory
-
7130LA55J8
Integrated Device Technology (IDT)
分类:Memory
-
70V25S15PF
Integrated Device Technology (IDT)
分类:Memory
-
7035L15PF
Integrated Device Technology (IDT)
分类:Memory
-
7130SA20TF
Integrated Device Technology (IDT)
分类:Memory
-
70T653MS15BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S150PFGI8
Integrated Device Technology (IDT)
分类:Memory