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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71321SA55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 155mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 7006L25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 220mA | RAM, SDR, SRAM | Bulk | 2008 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 25 ns | 28b | 128 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||
 | IDT71P72804S167BQGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 165 | 700mA | QDR, RAM, SRAM | 2006 | e1 | 3 (168 Hours) | 165 | 锡银铜 | 85°C | -40°C | 流水线结构 | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 167MHz | 30 | 不合格 | INDUSTRIAL | Parallel | 2 | 500 ps | 1MX18 | 18 | 19b | 18 Mb | Synchronous | 18b | 1.9V | 1.7V | 15mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
 | 70V9279S12PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 33.3MHz | COMMERCIAL | Parallel | 64kB | 2 | 12 ns | 3-STATE | 15b | 512 kb | 0.005A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 7143LA55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | Tape & Reel | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 2 | 55 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||
 | IDT6116LA25SO8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.11mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 25 ns | COMMON | 2V | 5.5V | 4.5V | YES | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 70V9079L12PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | INDUSTRIAL | Parallel | 2 | 25 ns | 3-STATE | 15b | 256 kb | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71V432S6PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2014 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 83MHz | 0.18mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 6 ns | COMMON | 3.14V | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | IDT71V3579S80PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 100MHz | 0.21mA | 256KX18 | 3-STATE | 18 | 0.035A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 7054L25PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 250mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 4 | 25 ns | 3-STATE | 12b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71321SA20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71256SA25YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | 145mA | RAM, SRAM - Asynchronous | Rail/Tube | 2010 | e0 | no | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 25 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.556mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | 7025L17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 71V67603S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 260mA | 133MHz | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | 260mA | COMMERCIAL | Parallel | 1.1MB | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71P72804S200BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 165 | 750mA | QDR, RAM, SRAM | 卷带 | 2006 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 1.8V | BOTTOM | BALL | 1mm | not_compliant | 200MHz | 不合格 | Parallel | 2 | 450 ps | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | 0.335A | SEPARATE | Synchronous | 18b | 1.9V | 1.7V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
 | 70V25L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 155mA | RAM, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 35 ns | 8KX16 | 3-STATE | 26b | 128 kb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 71421LA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 360.605934mg | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 110mA | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71P73604S200BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR2, RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 1 | 1mm | not_compliant | 200MHz | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.7mA | 512KX36 | 3-STATE | 36 | 0.3A | 18874368 bit | 0.45 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
 | IDT71V3577SA75BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 117MHz | 0.255mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 7.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71V3577SA75BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1mm | not_compliant | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 117MHz | 0.255mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 7.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 70V3579S6BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 310mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 83MHz | COMMERCIAL | Parallel | 2 | 6 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 7024S17PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 310mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 17 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 70261L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | 100 | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 20 ns | 28b | 256 kb | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V3576YS150PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.295mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 7130LA35P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 120mA | RAM, SDR, SRAM | Bulk | 2013 | Discontinued | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 35 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 |
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71321SA55J8
Integrated Device Technology (IDT)
分类:Memory
-
7006L25G
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P72804S167BQGI
Integrated Device Technology (IDT)
分类:Memory
-
70V9279S12PRF8
Integrated Device Technology (IDT)
分类:Memory
-
7143LA55PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116LA25SO8
Integrated Device Technology (IDT)
分类:Memory
-
70V9079L12PFI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V432S6PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3579S80PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7054L25PRF8
Integrated Device Technology (IDT)
分类:Memory
-
71321SA20PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71256SA25YI
Integrated Device Technology (IDT)
分类:Memory
-
7025L17J
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S133BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P72804S200BQ8
Integrated Device Technology (IDT)
分类:Memory
-
70V25L35J
Integrated Device Technology (IDT)
分类:Memory
-
71421LA20PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P73604S200BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA75BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA75BQ8
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S6BC8
Integrated Device Technology (IDT)
分类:Memory
-
7024S17PF8
Integrated Device Technology (IDT)
分类:Memory
-
70261L20PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3576YS150PF
Integrated Device Technology (IDT)
分类:Memory
-
7130LA35P
Integrated Device Technology (IDT)
分类:Memory