品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 709089L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | QUAD | FLAT | 240 | 1 | 5V | 0.5mm | 28.5MHz | 20 | 100 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 64kB | 2 | 285mA | 15 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.005A | COMMON | Synchronous | 8b | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | 70V34S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.5mm | 20 | 100 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 9kB | 2 | 190mA | 25 ns | 4KX18 | 3-STATE | 24b | 72 kb | 0.005A | COMMON | Asynchronous | 18b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V124SA10PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | DUAL | 鸥翼 | 225 | 1 | 3.3V | 1.27mm | not_compliant | 30 | 32 | R-PDSO-G32 | 不合格 | 3.6V | 3.3V | COMMERCIAL | 3.15V | Parallel | 0.145mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 1.2mm | 20.95mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | 71V65803S150BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | 150MHz | RAM, SDR, SRAM | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | BOTTOM | BALL | 260 | 1 | 3.3V | 150MHz | 30 | 165 | 3.3V | COMMERCIAL | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 0.325mA | 6.7 ns | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
![]() | 7014S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4.5kB | 2 | 250mA | 15 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 70V37L20PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 中断标志 | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.5mm | 20 | 100 | 3.3V | INDUSTRIAL | Parallel | 3.6V | 3V | 72kB | 2 | 220mA | 20 ns | 3-STATE | 30b | 576 kb | 0.003A | COMMON | Asynchronous | 18b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | IDT71T75702S85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 未说明 | 1 | 2.5V | 1.27mm | not_compliant | 未说明 | 119 | 不合格 | 2.625V | 2.5V | COMMERCIAL | 2.375V | Parallel | SYNCHRONOUS | 90MHz | 0.225mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 8.5 ns | COMMON | 2.38V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | 71V35761SA200BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | FBGA | 165 | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | BOTTOM | BALL | 260 | 1 | 3.3V | 200MHz | 30 | 165 | 3.3V | COMMERCIAL | Parallel | 3.465V | 3.135V | 1 | 360mA | 3.1 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | 7014S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4.5kB | 2 | 250mA | 15 ns | 4KX9 | 3-STATE | 12b | 36 kb | COMMON | Asynchronous | 9b | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71V632S5PFG | Integrated Device Technology (IDT) | 数据表 | 288 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 100MHz | RAM, SDR, SRAM | 2015 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | ALSO REQUIRES 3.3V I/O SUPPLY | QUAD | 鸥翼 | 260 | 1 | 3.3V | 0.65mm | 100MHz | 30 | 100 | 3.3V | INDUSTRIAL | Parallel | 3.63V | 3.135V | 256kB | 1 | 200mA | 5 ns | 64KX32 | 3-STATE | 16b | 2 Mb | COMMON | Synchronous | 32b | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | 7014S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4.5kB | 2 | 240mA | 25 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT7164L25YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 5V | 1.27mm | not_compliant | 30 | 28 | 不合格 | 5.5V | 5V | INDUSTRIAL | 4.5V | Parallel | 0.15mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 25 ns | COMMON | 2V | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | 70V659S12BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | 256 | 3.3V | COMMERCIAL | Parallel | 3.45V | 3.15V | 2 | 465mA | 12 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | 70V24S20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.5mm | 20 | 100 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 70V06L25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.8mm | 20 | 64 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 16kB | 2 | 165mA | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | COMMON | Asynchronous | 8b | 2V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 70V24S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | J BEND | 225 | 1 | 3.3V | 84 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 8kB | 2 | 180mA | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 7005S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | 68 | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 5.5V | 4.5V | 8kB | 2 | 15 ns | 26b | 64 kb | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 7014S20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4.5kB | 2 | 245mA | 20 ns | 4KX9 | 3-STATE | 12b | 36 kb | COMMON | Asynchronous | 9b | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71T75702S85PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | 鸥翼 | 240 | 1 | 2.5V | 0.65mm | not_compliant | 20 | 100 | R-PQFP-G100 | 不合格 | 2.625V | 2.5V | COMMERCIAL | 2.375V | Parallel | SYNCHRONOUS | 90MHz | 0.225mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 8.5 ns | COMMON | 2.38V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 7025L45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; ARBITER; SEMAPHORE | QUAD | J BEND | 225 | 1 | 5V | 84 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 16kB | 2 | 45 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | IDT71T75702S85PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | RAM, SRAM | Tape & Reel (TR) | 2005 | e3 | 100 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | 鸥翼 | 1 | 2.5V | 0.65mm | 100 | R-PQFP-G100 | 不合格 | 2.625V | 2.5V | COMMERCIAL | 2.375V | Parallel | SYNCHRONOUS | 90MHz | 0.225mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 8.5 ns | COMMON | 2.38V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | 71V256SA12PZGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSSOP | 28 | RAM, SDR, SRAM - Asynchronous | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | DUAL | 鸥翼 | 260 | 1 | 3.3V | 0.55mm | 30 | 28 | 3.3V | INDUSTRIAL | Parallel | 3.6V | 3V | 32kB | 1 | 90mA | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | 7014S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | QUAD | J BEND | 225 | 1 | 5V | 52 | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 4.5kB | 2 | 245mA | 20 ns | 4KX9 | 3-STATE | 12b | 36 kb | COMMON | Asynchronous | 9b | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71V416S15BE | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | RAM, SDR, SRAM - Asynchronous | 2014 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | BOTTOM | BALL | 225 | 1 | 3.3V | 48 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 512kB | 1 | 170mA | 15 ns | 18b | 4 Mb | Asynchronous | 16b | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
![]() | 70V25L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | QUAD | 鸥翼 | 240 | 1 | 3.3V | 0.5mm | 20 | 100 | 3.3V | COMMERCIAL | Parallel | 3.6V | 3V | 16kB | 2 | 175mA | 20 ns | 8KX16 | 3-STATE | 26b | 128 kb | COMMON | Asynchronous | 16b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
709089L15PF
Integrated Device Technology (IDT)
分类:Memory
70V34S25PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10PH8
Integrated Device Technology (IDT)
分类:Memory
71V65803S150BQG8
Integrated Device Technology (IDT)
分类:Memory
7014S15J
Integrated Device Technology (IDT)
分类:Memory
70V37L20PFI
Integrated Device Technology (IDT)
分类:Memory
IDT71T75702S85BG
Integrated Device Technology (IDT)
分类:Memory
71V35761SA200BQG8
Integrated Device Technology (IDT)
分类:Memory
7014S15J8
Integrated Device Technology (IDT)
分类:Memory
71V632S5PFG
Integrated Device Technology (IDT)
分类:Memory
7014S25J
Integrated Device Technology (IDT)
分类:Memory
IDT7164L25YI8
Integrated Device Technology (IDT)
分类:Memory
70V659S12BC8
Integrated Device Technology (IDT)
分类:Memory
70V24S20PF8
Integrated Device Technology (IDT)
分类:Memory
70V06L25PF8
Integrated Device Technology (IDT)
分类:Memory
70V24S35J8
Integrated Device Technology (IDT)
分类:Memory
7005S15J8
Integrated Device Technology (IDT)
分类:Memory
7014S20J
Integrated Device Technology (IDT)
分类:Memory
IDT71T75702S85PF8
Integrated Device Technology (IDT)
分类:Memory
7025L45J8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75702S85PFG8
Integrated Device Technology (IDT)
分类:Memory
71V256SA12PZGI8
Integrated Device Technology (IDT)
分类:Memory
7014S20J8
Integrated Device Technology (IDT)
分类:Memory
71V416S15BE
Integrated Device Technology (IDT)
分类:Memory
70V25L20PF
Integrated Device Technology (IDT)
分类:Memory
