品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71T75802S100PFGI
IDT71T75802S100PFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2015

e3

3 (168 Hours)

100

3A991.B.2.A

Matte Tin (Sn) - annealed

85°C

-40°C

流水线结构

8542.32.00.41

2.5V

QUAD

鸥翼

260

1

0.65mm

100MHz

30

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.195mA

1MX18

3-STATE

18

0.06A

18874368 bit

5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

IDT71V416YS15YI8
IDT71V416YS15YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2008

e0

44

3A991.B.2.A

锡铅

85°C

-40°C

8542.32.00.41

3.3V

DUAL

J BEND

1

1.27mm

不合格

INDUSTRIAL

Parallel

256KX16

16

4194304 bit

15 ns

3.6V

3V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

70V08L25PF8
70V08L25PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

170mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

64kB

2

25 ns

64KX8

3-STATE

32b

512 kb

0.003A

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

70261L35PF
70261L35PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

255mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

32kB

2

35 ns

16KX16

3-STATE

28b

256 kb

0.005A

COMMON

Asynchronous

16b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71V2548S133BG8
IDT71V2548S133BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2008

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

133MHz

未说明

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

256KX18

3-STATE

18

0.04A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

符合RoHS标准

IDT71P74604S167BQ
IDT71P74604S167BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

QDR, RAM, SRAM

2008

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

167MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.85mA

512KX36

3-STATE

36

0.3A

18874368 bit

0.5 ns

SEPARATE

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

70V05L25PF
70V05L25PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

165mA

RAM, SDR, SRAM

2006

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.8mm

20

COMMERCIAL

Parallel

8kB

2

25 ns

8KX8

3-STATE

26b

64 kb

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71T75802S100PFGI8
IDT71T75802S100PFGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

RAM, SRAM

Tape & Reel (TR)

2015

e3

3 (168 Hours)

100

Matte Tin (Sn) - annealed

85°C

-40°C

2.5V

QUAD

鸥翼

0.635mm

unknown

100MHz

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.195mA

1MX18

3-STATE

18

0.06A

18874368 bit

5 ns

COMMON

2.38V

符合RoHS标准

IDT71V124SA12TYI
IDT71V124SA12TYI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

2007

e0

no

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

20

不合格

3.3V

INDUSTRIAL

Parallel

0.14mA

128KX8

3-STATE

8

0.01A

1048576 bit

12 ns

COMMON

3V

3.6V

3.15V

3.7592mm

20.955mm

7.62mm

Non-RoHS Compliant

70V639S10PRF
70V639S10PRF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

500mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

128

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

225

1

0.5mm

COMMERCIAL

Parallel

256kB

2

10 ns

3-STATE

34b

2.3 Mb

0.015A

COMMON

Asynchronous

18b

3.45V

3.15V

1.6mm

20mm

14mm

1.4mm

无

符合RoHS标准

含铅

7025L17PF8
7025L17PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

260mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

16kB

2

17 ns

8KX16

3-STATE

26b

128 kb

0.0015A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71T75702S75BGI
IDT71T75702S75BGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

100MHz

0.295mA

512KX36

3-STATE

36

0.06A

18874368 bit

7.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

70T633S15BC
70T633S15BC
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

305mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

2.5V

BOTTOM

BALL

225

1

1mm

20

COMMERCIAL

Parallel

1.1MB

2

15 ns

3-STATE

38b

9 Mb

0.01A

COMMON

Asynchronous

18b

2.6V

2.4V

1.5mm

17mm

17mm

1.4mm

无

符合RoHS标准

含铅

70V24S55PF8
70V24S55PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SDR, SRAM

2004

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

8kB

2

0.18mA

55 ns

4KX16

3-STATE

24b

64 kb

0.005A

COMMON

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71V416YL10Y8
IDT71V416YL10Y8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2008

e0

no

44

3A991.B.2.A

锡铅

70°C

0°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

30

不合格

COMMERCIAL

Parallel

256KX16

16

4194304 bit

10 ns

3.6V

3V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

IDT71V016SA15PHI8
IDT71V016SA15PHI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

no

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

0.8mm

not_compliant

20

R-PDSO-G44

不合格

3.3V

INDUSTRIAL

Parallel

0.13mA

64KX16

3-STATE

16

0.01A

1048576 bit

15 ns

COMMON

3.15V

3.6V

3.15V

1.2mm

18.41mm

10.16mm

Non-RoHS Compliant

IDT71T75702S75BGI8
IDT71T75702S75BGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

100MHz

0.295mA

512KX36

3-STATE

36

0.06A

18874368 bit

7.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

71V35761S200PFG8
71V35761S200PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

TQFP

100

360mA

200MHz

RAM, SDR, SRAM

Tape & Reel

2009

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

3.3V

QUAD

鸥翼

260

1

0.65mm

200MHz

30

COMMERCIAL

Parallel

512kB

1

3.1 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

14mm

1.4mm

无

符合RoHS标准

无铅

70V25L20PF
70V25L20PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

175mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

16kB

2

20 ns

8KX16

3-STATE

26b

128 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

IDT71V65802S100PF
IDT71V65802S100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

512KX18

3-STATE

18

0.04A

9437184 bit

5 ns

COMMON

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71T75702S85PFGI
IDT71T75702S85PFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2005

e0

3 (168 Hours)

100

3A991.B.2.A

锡铅

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

30

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

90MHz

0.245mA

512KX36

3-STATE

36

0.06A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

7132SA100J
7132SA100J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

155mA

RAM, SDR, SRAM

2010

活跃

70°C

0°C

5V

Parallel

2kB

2

100 ns

22b

16 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

无

符合RoHS标准

含铅

IDT71V67602S166BQ
IDT71V67602S166BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

166MHz

20

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.34mA

256KX36

3-STATE

36

0.05A

9437184 bit

3.5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71T75702S85PFI
IDT71T75702S85PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2005

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

90MHz

0.245mA

512KX36

3-STATE

36

0.06A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

7005L17PF
7005L17PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

64

RAM, SDR, SRAM

2012

活跃

70°C

0°C

5V

Parallel

8kB

2

17 ns

26b

64 kb

5.5V

4.5V

14mm

14mm

1.4mm

无

符合RoHS标准

含铅