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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7014S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 25 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT7164L25YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.15mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 25 ns | COMMON | 2V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 70V25S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 180mA | RAM, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 35 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V26S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 140mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.006A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V3558SA166BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | COMMERCIAL | Parallel | 1 | 18b | 4.5 Mb | 3.5 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | 7014S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 25 ns | 4KX9 | 3-STATE | 12b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 71V256SA12YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 32kB | 1 | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | IDT70V7319S166DD | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TQFP | YES | 144 | RAM, SRAM | 2008 | e0 | 4 (72 Hours) | 144 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | not_compliant | 166MHz | 20 | S-PQFP-G144 | 不合格 | 2.5/3.33.3V | COMMERCIAL | Parallel | 2 | SYNCHRONOUS | 0.79mA | 256KX18 | 3-STATE | 18 | 0.03A | 4718592 bit | 12 ns | COMMON | 3.15V | 3.45V | 3.15V | 1.6mm | 20mm | 20mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 70T651S15BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 305mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 7014S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 25 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 7025S45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; ARBITER; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 0.34mA | 45 ns | 8KX16 | 3-STATE | 13b | 128 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V256SA10YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | 28 | EAR99 | 锡铅 | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | INDUSTRIAL | Parallel | 32KX8 | 8 | 262144 bit | 10 ns | 3.6V | 3V | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
 | 7005L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V124SA10YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 150mA | RAM, SRAM - Asynchronous | 卷带 | 2007 | 85°C | -40°C | 3.3V | Parallel | 1 | 10 ns | 17b | 1 Mb | Asynchronous | 8b | 3.6V | 3.15V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||
 | 7005S17PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 310mA | RAM, SDR, SRAM | Tape & Reel | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 17 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.17A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | IDT71V67602S150BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 150MHz | 未说明 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.05A | 9437184 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | 70V3599S166BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 512kB | 2 | 20 ns | 3-STATE | 34b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V27S55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | 100 | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 64kB | 2 | 55 ns | 30b | 512 kb | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
 | 71321SA20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71256SA25YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | 145mA | RAM, SRAM - Asynchronous | Rail/Tube | 2010 | e0 | no | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 25 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.556mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 7025L17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V67603S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 260mA | 133MHz | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | 260mA | COMMERCIAL | Parallel | 1.1MB | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 70V631S10PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 18b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT7164S35TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 28 | RAM, SRAM - Asynchronous | 2009 | e3 | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 260 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 0.15mA | 8KX8 | 3-STATE | 8 | 0.015A | 65536 bit | 35 ns | COMMON | 4.5V | 5.5V | 4.5V | 4.57mm | 34.67mm | 7.62mm | 符合RoHS标准 | |||||||||||||||||||||||||||
 | IDT7164S35YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e3 | yes | 3 (168 Hours) | 28 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1.27mm | unknown | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | 0.09mA | 8KX8 | 3-STATE | 8 | 0.015A | 65536 bit | 35 ns | COMMON | 4.5V | 符合RoHS标准 |
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7014S25J
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164L25YI8
Integrated Device Technology (IDT)
分类:Memory
-
70V25S35J
Integrated Device Technology (IDT)
分类:Memory
-
70V26S35J
Integrated Device Technology (IDT)
分类:Memory
-
71V3558SA166BQG8
Integrated Device Technology (IDT)
分类:Memory
-
7014S25J8
Integrated Device Technology (IDT)
分类:Memory
-
71V256SA12YG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT70V7319S166DD
Integrated Device Technology (IDT)
分类:Memory
-
70T651S15BC8
Integrated Device Technology (IDT)
分类:Memory
-
7014S25PF8
Integrated Device Technology (IDT)
分类:Memory
-
7025S45J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V256SA10YI
Integrated Device Technology (IDT)
分类:Memory
-
7005L20PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA10YGI8
Integrated Device Technology (IDT)
分类:Memory
-
7005S17PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V67602S150BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3599S166BF8
Integrated Device Technology (IDT)
分类:Memory
-
70V27S55PF8
Integrated Device Technology (IDT)
分类:Memory
-
71321SA20PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71256SA25YI
Integrated Device Technology (IDT)
分类:Memory
-
7025L17J
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S133BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V631S10PRF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164S35TPG
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164S35YG
Integrated Device Technology (IDT)
分类:Memory