品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71421LA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 360.605934mg | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 110mA | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | IDT71P73604S200BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR2, RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 1 | 1mm | not_compliant | 200MHz | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.7mA | 512KX36 | 3-STATE | 36 | 0.3A | 18874368 bit | 0.45 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71V3577SA75BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 117MHz | 0.255mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 7.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | IDT71P72804S250BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | QDR, RAM, SRAM | 2006 | 3A991.B.2.A | 70°C | 0°C | 8542.32.00.41 | 250MHz | Parallel | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT6116LA45SOI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOIC | 24 | 95mA | RAM, SRAM - Asynchronous | 卷带 | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 85°C | -40°C | 5V | DUAL | 鸥翼 | 225 | 1 | not_compliant | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 45 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 2.65mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | 70V3399S133BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 256 | 400mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 17b | 2.3 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 70V639S15PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 440mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 17b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | IDT71P73804S250BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR2, RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 1 | 1mm | not_compliant | 250MHz | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.65mA | 1MX18 | 3-STATE | 18 | 0.325A | 18874368 bit | 0.45 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT6116LA45TPGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 24 | 95mA | RAM, SRAM - Asynchronous | Rail/Tube | 2008 | e3 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 85°C | -40°C | 5V | DUAL | 260 | 1 | 2.54mm | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 45 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 符合RoHS标准 | |||||||||||||||||||||||||||||
![]() | IDT71T75602S200PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2010 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.275mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 3.2 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | 71421LA20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 360.605934mg | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 110mA | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | IDT71P72804S200BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 165 | 750mA | QDR, RAM, SRAM | 2006 | e1 | 3 (168 Hours) | 165 | 锡银铜 | 70°C | 0°C | 流水线结构 | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 200MHz | 30 | 不合格 | COMMERCIAL | Parallel | 2 | 450 ps | 1MX18 | 18 | 19b | 18 Mb | Synchronous | 18b | 1.9V | 1.7V | 15mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
![]() | 71V65603S133BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 320mA | RAM, SRAM | Tape & Reel | 2007 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | 30 | INDUSTRIAL | Parallel | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.06A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | IDT71V67602S150PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.05A | 9437184 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | IDT6116LA35SOGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e3 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 260 | 1 | 1.27mm | 30 | R-PDSO-G24 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.095mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | 2.65mm | 15.4mm | 7.5mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | 7008S55PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 310mA | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 85°C | -40°C | 5V | Parallel | 64kB | 2 | 55 ns | 32b | 512 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
![]() | 7132SA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 250mA | RAM, SDR, SRAM | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 20 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | IDT6116LA35TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e3 | 24 | EAR99 | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 260 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.095mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | 7133SA25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 300mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 不合格 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 3-STATE | 22b | 32 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 70V9389L9PRFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 240mA | RAM, SRAM | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 40MHz | INDUSTRIAL | Parallel | 2 | 20 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | COMMON | Synchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 70V657S10BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 30b | 1.1 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | 7140LA25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 170mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71V2548S100BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2008 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | 100MHz | 未说明 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||||||
![]() | 70T633S12BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 355mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 38b | 9 Mb | 0.01A | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 70T659S12BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 395mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | INDUSTRIAL | Parallel | 2 | 12 ns | 3-STATE | 34b | 4.5 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
71421LA20PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71P73604S200BQ
Integrated Device Technology (IDT)
分类:Memory
IDT71V3577SA75BQ
Integrated Device Technology (IDT)
分类:Memory
IDT71P72804S250BQG
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA45SOI8
Integrated Device Technology (IDT)
分类:Memory
70V3399S133BC8
Integrated Device Technology (IDT)
分类:Memory
70V639S15PRF8
Integrated Device Technology (IDT)
分类:Memory
IDT71P73804S250BQ
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA45TPGI
Integrated Device Technology (IDT)
分类:Memory
IDT71T75602S200PF8
Integrated Device Technology (IDT)
分类:Memory
71421LA20PF
Integrated Device Technology (IDT)
分类:Memory
IDT71P72804S200BQG
Integrated Device Technology (IDT)
分类:Memory
71V65603S133BGGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V67602S150PF8
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA35SOGI8
Integrated Device Technology (IDT)
分类:Memory
7008S55PFI
Integrated Device Technology (IDT)
分类:Memory
7132SA20J
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA35TPG
Integrated Device Technology (IDT)
分类:Memory
7133SA25PF8
Integrated Device Technology (IDT)
分类:Memory
70V9389L9PRFI8
Integrated Device Technology (IDT)
分类:Memory
70V657S10BC8
Integrated Device Technology (IDT)
分类:Memory
7140LA25PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V2548S100BG
Integrated Device Technology (IDT)
分类:Memory
70T633S12BC
Integrated Device Technology (IDT)
分类:Memory
70T659S12BFI8
Integrated Device Technology (IDT)
分类:Memory
