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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70T3539MS133BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 256 | 740mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | 20 | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 19b | 18 Mb | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V416S10PHGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TSOP | YES | 44 | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | INDUSTRIAL | Parallel | 512kB | 1 | 10 ns | 18b | 4 Mb | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
 | IDT71V416VL10PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2005 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.18mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 10 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||
 | 71256SA12PZG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSSOP | 28 | 160mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | 30 | 5V | COMMERCIAL | Parallel | 32kB | 1 | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 709349L9PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 0.36mA | 9 ns | 4KX18 | 3-STATE | 24b | 72 kb | 0.003A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71V3577S85BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 180mA | 87MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 87MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V416VL10PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 10 ns | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | 7015S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 265mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 25 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 709079S12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 345mA | RAM, SRAM | Tape & Reel | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | 5V | COMMERCIAL | Parallel | 2 | 25 ns | 3-STATE | 15b | 256 kb | 0.015A | COMMON | Synchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 71V321L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 100mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | BATTERY BACKUP;AUTOMATIC POWER DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V25761S166BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 320mA | 166MHz | RAM, SDR, SRAM | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 166MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70V3579S5BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 415mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 100MHz | 20 | INDUSTRIAL | Parallel | 128kB | 2 | 10 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 71321SA25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V3577SA80BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2005 | e1 | 119 | 3A991.B.2.A | 锡银铜 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1.27mm | unknown | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 8 ns | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||
 | 71V67803S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 260mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | COMMERCIAL | Parallel | 1 | 4.2 ns | 3-STATE | 19b | 9 Mb | 0.05A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V3577SA85BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1.27mm | not_compliant | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 87MHz | 0.18mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 71024S25TYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | Discontinued | 3 (168 Hours) | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | 260 | Parallel | 128kB | 1 | 25 ns | 17b | 1 Mb | Asynchronous | 8b | 5.5V | 4.5V | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||
 | 7134LA35P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 210mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V3577SA80BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1mm | not_compliant | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 100MHz | 0.21mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V3577SA85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2005 | e1 | yes | 3 (168 Hours) | 119 | 3A991.B.2.A | 锡银铜 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 1.27mm | 30 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 8.5 ns | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
 | 7164L25YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 28 | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 8kB | 1 | 25 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | COMMON | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 7026L25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 265mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 25 ns | 28b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
 | 71421LA35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 120mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | IDT71V3577SA80BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1mm | not_compliant | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.2mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 7027L55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 230mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 55 ns | 3-STATE | 30b | 512 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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70T3539MS133BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V416S10PHGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416VL10PHG
Integrated Device Technology (IDT)
分类:Memory
-
71256SA12PZG8
Integrated Device Technology (IDT)
分类:Memory
-
709349L9PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S85BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416VL10PHG8
Integrated Device Technology (IDT)
分类:Memory
-
7015S25PF8
Integrated Device Technology (IDT)
分类:Memory
-
709079S12PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V321L25J8
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S166BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S5BFI
Integrated Device Technology (IDT)
分类:Memory
-
71321SA25PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA80BGG8
Integrated Device Technology (IDT)
分类:Memory
-
71V67803S133BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA85BG8
Integrated Device Technology (IDT)
分类:Memory
-
71024S25TYGI
Integrated Device Technology (IDT)
分类:Memory
-
7134LA35P
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA80BQI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA85BG
Integrated Device Technology (IDT)
分类:Memory
-
7164L25YGI8
Integrated Device Technology (IDT)
分类:Memory
-
7026L25J
Integrated Device Technology (IDT)
分类:Memory
-
71421LA35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA80BQ8
Integrated Device Technology (IDT)
分类:Memory
-
7027L55PF8
Integrated Device Technology (IDT)
分类:Memory