品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

筛选水平

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71V3559S75PF8
IDT71V3559S75PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

256KX18

3-STATE

18

0.04A

4718592 bit

7.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71T75702S75PFG8
IDT71T75702S75PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2005

e3

100

3A991.B.2.A

哑光锡

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

1

0.65mm

R-PQFP-G100

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

512KX36

3-STATE

36

0.04A

18874368 bit

7.5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

IDT71016S15Y8
IDT71016S15Y8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

no

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

5V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

5V

COMMERCIAL

Parallel

1

0.18mA

64KX16

3-STATE

16

0.01A

1048576 bit

15 ns

COMMON

4.5V

5.5V

4.5V

YES

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

70V27L55PF8
70V27L55PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

180mA

RAM, SDR, SRAM

2012

活跃

70°C

0°C

3.3V

Parallel

64kB

2

55 ns

30b

512 kb

Asynchronous

16b

3.6V

3V

14mm

14mm

1.4mm

符合RoHS标准

含铅

70914S20PF8
70914S20PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

290mA

RAM, SDR, SRAM

2010

活跃

70°C

0°C

5V

50MHz

Parallel

4.5kB

2

20 ns

24b

36 kb

Synchronous

9b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V657S12BC8
70V657S12BC8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

465mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

BOTTOM

BALL

225

1

1mm

COMMERCIAL

Parallel

2

12 ns

3-STATE

30b

1.1 Mb

0.015A

COMMON

Asynchronous

36b

3.45V

3.15V

1.5mm

17mm

17mm

1.4mm

符合RoHS标准

含铅

7133SA70J
7133SA70J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

68

280mA

RAM, SDR, SRAM

2008

e0

no

活跃

1 (Unlimited)

68

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4kB

2

70 ns

3-STATE

22b

32 kb

0.015A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

24mm

24mm

3.63mm

符合RoHS标准

含铅

IDT71T75902S80PFI8
IDT71T75902S80PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

95MHz

0.27mA

1MX18

3-STATE

18

0.06A

18874368 bit

8 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

7008S20J
7008S20J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

325mA

RAM, SDR, SRAM

2010

e0

no

活跃

1 (Unlimited)

84

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

64kB

2

20 ns

64KX8

3-STATE

32b

512 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

4.57mm

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

7142SA25J8
7142SA25J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

220mA

RAM, SDR, SRAM

2004

活跃

70°C

0°C

5V

Parallel

2kB

2

25 ns

22b

16 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

71V35761S183BGG8
71V35761S183BGG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

BGA

119

340mA

RAM, SRAM

Tape & Reel

2009

e1

yes

Discontinued

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

260

1

183MHz

30

COMMERCIAL

Parallel

1

3.3 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

7006S55JI
7006S55JI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

68

300mA

RAM, SDR, SRAM

2008

活跃

85°C

-40°C

5V

Parallel

16kB

2

55 ns

28b

128 kb

Asynchronous

8b

5.5V

4.5V

24mm

24mm

3.63mm

符合RoHS标准

含铅

IDT71024S12YI8
IDT71024S12YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

85°C

-40°C

5V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

5V

INDUSTRIAL

Parallel

0.16mA

128KX8

3-STATE

8

0.01A

1048576 bit

12 ns

COMMON

4.5V

5.5V

4.5V

3.683mm

20.955mm

10.16mm

Non-RoHS Compliant

70V07S35PF
70V07S35PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

140mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.65mm

20

COMMERCIAL

Parallel

32kB

2

35 ns

3-STATE

15b

256 kb

0.006A

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

71V35761S183BGGI8
71V35761S183BGGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

BGA

119

350mA

RAM, SRAM

Tape & Reel

2009

e1

yes

Discontinued

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

3.3V

BOTTOM

BALL

260

1

183MHz

30

INDUSTRIAL

Parallel

1

3.3 ns

3-STATE

17b

4.5 Mb

0.035A

COMMON

Synchronous

36b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

IDT71V65903S80PF8
IDT71V65903S80PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

95MHz

0.25mA

512KX18

3-STATE

18

0.04A

9437184 bit

8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V24L20PF
70V24L20PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

175mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

8kB

2

20 ns

4KX16

3-STATE

24b

64 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT70V7339S133DD
IDT70V7339S133DD
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TQFP

YES

144

RAM, SRAM

2008

e0

4 (72 Hours)

144

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

225

1

0.5mm

not_compliant

133MHz

30

S-PQFP-G144

不合格

2.5/3.33.3V

COMMERCIAL

Parallel

2

SYNCHRONOUS

0.645mA

512KX18

3-STATE

18

0.03A

9437184 bit

15 ns

COMMON

3.15V

3.45V

3.15V

1.6mm

20mm

20mm

Non-RoHS Compliant

70V639S15BF
70V639S15BF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

208

440mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

BOTTOM

BALL

225

1

0.8mm

20

COMMERCIAL

Parallel

256kB

2

15 ns

3-STATE

17b

2.3 Mb

0.015A

COMMON

Asynchronous

18b

3.45V

3.15V

15mm

15mm

1.4mm

符合RoHS标准

含铅

71V35761S200BGG8
71V35761S200BGG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

BGA

119

360mA

RAM, SRAM

Tape & Reel

2009

e1

yes

Discontinued

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

260

1

200MHz

30

COMMERCIAL

Parallel

1

3.1 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

无铅

IDT71V547XS100PF
IDT71V547XS100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2015

e0

3 (168 Hours)

100

3A991.B.2.A

锡铅

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

20

R-PQFP-G100

不合格

COMMERCIAL

Parallel

SYNCHRONOUS

128KX36

36

4718592 bit

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V24S15J8
70V24S15J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

PLCC

YES

84

RAM, SDR, SRAM

2004

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

J BEND

225

1

COMMERCIAL

Parallel

8kB

2

15 ns

4KX16

3-STATE

24b

64 kb

0.005A

COMMON

3V

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

6116LA150DB
6116LA150DB
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

10 Weeks

CDIP

NO

24

RAM, SDR, SRAM - Asynchronous

Military grade

2013

e0

no

活跃

1 (Unlimited)

24

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

DUAL

THROUGH-HOLE

240

1

2.54mm

5V

MILITARY

Parallel

2kB

1

0.085mA

150 ns

2KX8

3-STATE

11b

16 kb

0.0003A

MIL-STD-883 Class B

COMMON

2V

5.5V

4.5V

4.826mm

32mm

15.24mm

2.9mm

符合RoHS标准

含铅

71V321L25TF8
71V321L25TF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

100mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

BATTERY BACKUP;AUTOMATIC POWER DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

2kB

2

25 ns

3-STATE

22b

16 kb

0.0015A

COMMON

Asynchronous

8b

2V

3.6V

3V

1.6mm

10mm

10mm

1.4mm

符合RoHS标准

含铅

70V34S15PF
70V34S15PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

215mA

RAM, SDR, SRAM

Bulk

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

9kB

2

15 ns

4KX18

3-STATE

24b

72 kb

0.005A

COMMON

Asynchronous

18b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅