我的订单
会员中心 
在线咨询
0755-83328606
品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7054S35PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 300mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 5V | COMMERCIAL | Parallel | 4 | 35 ns | 3-STATE | 12b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V67703S85BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 190mA | 87MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 87MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 8.5 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V3556S133BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1mm | not_compliant | 133MHz | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 4.2 ns | COMMON | 3.14V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||
 | 70V35S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 190mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 18kB | 2 | 25 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.005A | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V432S7PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2014 | e3 | 3 (168 Hours) | 100 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | unknown | 未说明 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 66MHz | 0.16mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 7 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||
 | 70V06L20PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 195mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | INDUSTRIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 7164L20YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 8kB | 1 | 20 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 70261S15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 325mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 15 ns | 28b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | 7026S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 305mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 25 ns | 28b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
 | 70T3519S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | 20 | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 36b | 9 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71P72804S167BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | QDR, RAM, SRAM | 2006 | e1 | 3 (168 Hours) | 165 | 3A991.B.2.A | 锡银铜 | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 167MHz | 30 | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 1MX18 | 18 | 18874368 bit | 0.5 ns | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||
 | IDT71V632S7PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 66MHz | 0.16mA | 64KX32 | 3-STATE | 32 | 0.015A | 2097152 bit | 7 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | 71V3577S75BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | FBGA | 165 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | 225 | 117MHz | Parallel | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
 | IDT71V65903S85PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 90MHz | 0.06mA | 512KX18 | 3-STATE | 18 | 0.06A | 9437184 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | IDT71V3576S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.305mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | IDT71T75602S200PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 275mA | RAM, SRAM | 2010 | e3 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | unknown | 200MHz | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 3.2 ns | 3-STATE | 36 | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 20mm | 符合RoHS标准 | |||||||||||||||||||||||||
 | IDT71V3559SA80BQGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e1 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | unknown | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 95MHz | 0.26mA | 256KX18 | 3-STATE | 18 | 0.045A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 符合RoHS标准 | |||||||||||||||||||||||
 | IDT71256L35Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e0 | no | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.105mA | 32KX8 | 3-STATE | 8 | 0.00012A | 262144 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | YES | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | IDT71V432S10PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2014 | e0 | no | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER; BYTE WRITE CONTROL | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 32KX32 | 3-STATE | 32 | 1048576 bit | 10 ns | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V3556S100PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.255mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | IDT71V424S12PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.17mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V546XS133PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e3 | yes | 3 (168 Hours) | 100 | 3A991.B.2.A | 哑光锡 | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | 30 | R-PQFP-G100 | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 4.2 ns | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | IDT71V25761S166PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 330mA | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 166MHz | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 3.5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | IDT70824L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 80 | RAM | 2009 | e0 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | S-PQFP-G80 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.31mA | 4KX16 | 16 | 0.0015A | 65536 bit | 25 ns | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71T75602S100PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 175mA | RAM, SRAM | 2015 | e3 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | unknown | 100MHz | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 5 ns | 3-STATE | 36 | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 20mm | 符合RoHS标准 |
-
7054S35PRF8
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S85BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S133BQ8
Integrated Device Technology (IDT)
分类:Memory
-
70V35S25PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V432S7PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V06L20PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7164L20YGI8
Integrated Device Technology (IDT)
分类:Memory
-
70261S15PF
Integrated Device Technology (IDT)
分类:Memory
-
7026S25J
Integrated Device Technology (IDT)
分类:Memory
-
70T3519S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P72804S167BQG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V632S7PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S75BQI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65903S85PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3576S150PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75602S200PFG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3559SA80BQGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71256L35Y8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V432S10PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S100PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424S12PH8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V546XS133PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761S166PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT70824L25PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75602S100PFG
Integrated Device Technology (IDT)
分类:Memory