品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 螺纹距离 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 70V7599S166BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 790mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 512kB | 2 | 20 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 70V9079S12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 33.3MHz | COMMERCIAL | Parallel | 32kB | 2 | 12 ns | 30b | 256 kb | Synchronous | 8b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | 7005S55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | 70T633S10BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 445mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | INDUSTRIAL | Parallel | 1.1MB | 2 | 10 ns | 3-STATE | 38b | 9 Mb | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | 71V67803S150BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 305mA | 150MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 3.8 ns | 3-STATE | 19b | 9 Mb | 0.05A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71V124SA10TYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e3 | 3 (168 Hours) | 32 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.15mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | 71421LA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 7014S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | LOW POWER STANDBY MODE; BATTERY BACK-UP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 25 ns | 4KX9 | 3-STATE | 12b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 7014S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 240mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4.5kB | 2 | 25 ns | 4KX9 | 3-STATE | 24b | 36 kb | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 7143LA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 280mA | RAM, SRAM | Tape & Reel | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 2 | 20 ns | 11b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
![]() | 70V9169L7PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 280mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 45.45MHz | 20 | COMMERCIAL | Parallel | 2 | 18 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.003A | COMMON | Synchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | IDT71V65602S150BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 150MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 3.8 ns | COMMON | 3V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | 7142SA100J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 155mA | RAM, SDR, SRAM | 2004 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 100 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
![]() | IDT71P71604S250BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR, RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 250MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.8mA | 512KX36 | 3-STATE | 36 | 0.325A | 18874368 bit | 0.45 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | 7008S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 305mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 25 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | IDT71V124SA10TY | Integrated Device Technology (IDT) | 数据表 | 500 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.145mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71V124SA12YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 140mA | RAM, SRAM - Asynchronous | 卷带 | 2007 | e0 | 3 (168 Hours) | 32 | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | INDUSTRIAL | Parallel | 1 | 12 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 20.955mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
![]() | IDT71V25761S166PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 320mA | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 3.5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | IDT71V632S5PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 100MHz | 0.2mA | 64KX32 | 3-STATE | 32 | 0.015A | 2097152 bit | 5 ns | COMMON | 3.14V | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
![]() | 71V65903S85PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 60mA | RAM, SRAM | Tape & Reel | 2005 | 活跃 | 85°C | -40°C | 3.3V | 91MHz | Parallel | 1 | 8.5 ns | 19b | 9 Mb | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 71V416S12BE | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 180mA | RAM, SDR, SRAM - Asynchronous | 2012 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | COMMERCIAL | Parallel | 512kB | 1 | 12 ns | 18b | 4 Mb | Asynchronous | 16b | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
![]() | IDT71V65602S150PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 3.8 ns | COMMON | 3V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
![]() | IDT71V124SA15TYI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.12mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 15 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | 70V7519S200BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | YES | 256 | 200MHz | RAM, SDR, SRAM | Bulk | 2013 | e1 | yes | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线或流过式结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 200MHz | 1mm | COMMERCIAL | Parallel | 1.1MB | 2 | 15 ns | 36b | 9 Mb | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||
![]() | IDT71V65602S150BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 150MHz | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 3.8 ns | COMMON | 3V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant |
70V7599S166BC
Integrated Device Technology (IDT)
分类:Memory
70V9079S12PF
Integrated Device Technology (IDT)
分类:Memory
7005S55PF8
Integrated Device Technology (IDT)
分类:Memory
70T633S10BFI
Integrated Device Technology (IDT)
分类:Memory
71V67803S150BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10TYGI8
Integrated Device Technology (IDT)
分类:Memory
71421LA20J
Integrated Device Technology (IDT)
分类:Memory
7014S25J8
Integrated Device Technology (IDT)
分类:Memory
7014S25PF8
Integrated Device Technology (IDT)
分类:Memory
7143LA20PF8
Integrated Device Technology (IDT)
分类:Memory
70V9169L7PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V65602S150BG8
Integrated Device Technology (IDT)
分类:Memory
7142SA100J8
Integrated Device Technology (IDT)
分类:Memory
IDT71P71604S250BQ8
Integrated Device Technology (IDT)
分类:Memory
7008S25J
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10TY
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA12YI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V25761S166PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V632S5PF8
Integrated Device Technology (IDT)
分类:Memory
71V65903S85PFGI8
Integrated Device Technology (IDT)
分类:Memory
71V416S12BE
Integrated Device Technology (IDT)
分类:Memory
IDT71V65602S150PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA15TYI8
Integrated Device Technology (IDT)
分类:Memory
70V7519S200BCG
Integrated Device Technology (IDT)
分类:Memory
IDT71V65602S150BQ
Integrated Device Technology (IDT)
分类:Memory
