品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
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![]() | IDT71V424L12YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 36 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.155mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
![]() | 71T75802S150BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 215mA | RAM, SRAM | Tape & Reel | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 150MHz | COMMERCIAL | Parallel | 1 | 3.8 ns | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | 71V3556SA100BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 250mA | RAM, SDR, SRAM | 100MHz | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | 250mA | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | IDT71T75802S150PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.235mA | 1MX18 | 3-STATE | 18 | 0.045A | 18874368 bit | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | 7132LA35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 48 | 170mA | RAM, SRAM | Military grade | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 35 ns | 3-STATE | 11b | 16 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 19mm | 19mm | 2.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
![]() | IDT71V424S12PHI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | 170mA | RAM, SRAM - Asynchronous | 卷带 | 2009 | e0 | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 12 ns | 3-STATE | 8 | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||
![]() | 70V18L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 235mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 235mA | COMMERCIAL | Parallel | 72kB | 2 | 15 ns | 64KX9 | 3-STATE | 16b | 576 kb | 0.003A | COMMON | Asynchronous | 9b | 3V | 3.6V | 3V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 71V65903S80BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 165 | RAM, SRAM | Tape & Reel | 2005 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 1 | 19b | 9 Mb | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71T75602S133BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 195mA | 133MHz | RAM, SDR, SRAM | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 133MHz | 30 | COMMERCIAL | Parallel | 2.3MB | 1 | 4.2 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | 70T3519S166BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | 166MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 1.1MB | 2 | 0.45mA | 3.6 ns | 3-STATE | 36b | 9 Mb | 0.015A | COMMON | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
![]() | 71V2546S100PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TQFP | YES | 100 | 100MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 0.25mA | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
![]() | 7024L30J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 84 | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 0.3mA | 30 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | IDT71T75702S75PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | 锡铅 | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 30 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 100MHz | 0.295mA | 512KX36 | 3-STATE | 36 | 0.06A | 18874368 bit | 7.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | 7006L20PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | 5V | INDUSTRIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
![]() | 71256S45DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 135mA | RAM, SDR, SRAM - Asynchronous | Military grade | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 未说明 | 不合格 | 5V | MILITARY | Parallel | 32kB | 1 | 45 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.02A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 37.2mm | 15.24mm | 1.65mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 71V2556S100PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 260mA | 100MHz | RAM, SDR, SRAM | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | IDT71T75702S80PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 2.5V | COMMERCIAL | Parallel | SYNCHRONOUS | 95MHz | 0.25mA | 512KX36 | 3-STATE | 36 | 0.04A | 18874368 bit | 8 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | 7005S45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 45 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | 7015L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 220mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 25 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | IDT6116SA25SOI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.12mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 25 ns | COMMON | 4.5V | 5.5V | 4.5V | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | 7143SA35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 295mA | RAM, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 2 | 35 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | 70V261L35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 120mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 35 ns | 28b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | 709349L6PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 430mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 52.6MHz | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 6.5 ns | 4KX18 | 3-STATE | 24b | 72 kb | 0.003A | COMMON | Synchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | IDT71V3559SA85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 90MHz | 0.225mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | IDT71T75802S100PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e3 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.195mA | 1MX18 | 3-STATE | 18 | 0.06A | 18874368 bit | 5 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | 符合RoHS标准 |
IDT71V424L12YI8
Integrated Device Technology (IDT)
分类:Memory
71T75802S150BG8
Integrated Device Technology (IDT)
分类:Memory
71V3556SA100BQ
Integrated Device Technology (IDT)
分类:Memory
IDT71T75802S150PFI8
Integrated Device Technology (IDT)
分类:Memory
7132LA35FB
Integrated Device Technology (IDT)
分类:Memory
IDT71V424S12PHI8
Integrated Device Technology (IDT)
分类:Memory
70V18L15PF8
Integrated Device Technology (IDT)
分类:Memory
71V65903S80BQ8
Integrated Device Technology (IDT)
分类:Memory
71T75602S133BGG8
Integrated Device Technology (IDT)
分类:Memory
70T3519S166BF
Integrated Device Technology (IDT)
分类:Memory
71V2546S100PFG8
Integrated Device Technology (IDT)
分类:Memory
7024L30J
Integrated Device Technology (IDT)
分类:Memory
IDT71T75702S75PFGI
Integrated Device Technology (IDT)
分类:Memory
7006L20PFGI8
Integrated Device Technology (IDT)
分类:Memory
71256S45DB
Integrated Device Technology (IDT)
分类:Memory
71V2556S100PFGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71T75702S80PF
Integrated Device Technology (IDT)
分类:Memory
7005S45J8
Integrated Device Technology (IDT)
分类:Memory
7015L25PF
Integrated Device Technology (IDT)
分类:Memory
IDT6116SA25SOI
Integrated Device Technology (IDT)
分类:Memory
7143SA35PF
Integrated Device Technology (IDT)
分类:Memory
70V261L35PF8
Integrated Device Technology (IDT)
分类:Memory
709349L6PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V3559SA85BG
Integrated Device Technology (IDT)
分类:Memory
IDT71T75802S100PFGI
Integrated Device Technology (IDT)
分类:Memory
