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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V256SA12PZI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSSOP | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 240 | 1 | 0.55mm | not_compliant | 20 | R-PDSO-G28 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.09mA | 32KX8 | 3-STATE | 8 | 0.002A | 262144 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 11.8mm | 8mm | Non-RoHS Compliant | |||||||||||||||||||||
 | 7026S55JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 310mA | RAM, SDR, SRAM | 2005 | no | 活跃 | EAR99 | 85°C | -40°C | 5V | Parallel | 32kB | 2 | 55 ns | 14b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||
 | 7016L20PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 310mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | INDUSTRIAL | Parallel | 2 | 20 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.01A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 7028L20PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 360mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | INDUSTRIAL | Parallel | 128kB | 2 | 20 ns | 64KX16 | 3-STATE | 16b | 1 Mb | 0.003A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 7015L25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 220mA | RAM, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 2 | 25 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 70V05L15JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 68 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 260 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 0.185mA | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 709289L9PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 400mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 40MHz | 20 | 5V | COMMERCIAL | Parallel | 128kB | 2 | 20 ns | 64KX16 | 3-STATE | 32b | 1 Mb | 0.003A | COMMON | Synchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
 | 70V631S10PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 500mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | COMMERCIAL | Parallel | 512kB | 2 | 10 ns | 3-STATE | 36b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71V3577S85PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 87MHz | 0.19mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
 | 70V24L55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 155mA | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | COMMON | Asynchronous | 16b | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 70V35S15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 215mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.005A | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | IDT71V65703S85PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 90MHz | 0.06mA | 256KX36 | 3-STATE | 36 | 0.06A | 9437184 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||
 | IDT71V65802S100BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 100MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 512KX18 | 3-STATE | 18 | 0.04A | 9437184 bit | 5 ns | COMMON | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | IDT71V3558S133BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 133MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | IDT71V3578S133PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | 2005 | e0 | no | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 4.2 ns | 3-STATE | 18 | 18b | 4.5 Mb | 0.03A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT71V416VS15YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44 | 170mA | RAM, SRAM - Asynchronous | 卷带 | 2005 | 70°C | 0°C | 3.3V | Parallel | 1 | 15 ns | 18b | 4 Mb | Asynchronous | 16b | 3.6V | 3V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
 | 709359L7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 400mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 45.45MHz | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 7.5 ns | 8KX18 | 3-STATE | 26b | 144 kb | 0.003A | COMMON | Synchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | IDT71V256SA10PZGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSSOP | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | 28 | EAR99 | 锡铅 | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 未说明 | 1 | 0.55mm | unknown | 未说明 | R-PDSO-G28 | 不合格 | INDUSTRIAL | Parallel | 32KX8 | 8 | 262144 bit | 10 ns | 3.6V | 3V | 1.2mm | 11.8mm | 8mm | 符合RoHS标准 | |||||||||||||||||||||||||||||
 | 70V9269L9PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 225mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 40MHz | COMMERCIAL | Parallel | 32kB | 2 | 9 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.003A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
 | 709369L7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 465mA | RAM, SRAM | 2010 | 活跃 | 70°C | 0°C | 5V | 45.45MHz | Parallel | 2 | 18 ns | 28b | 288 kb | Synchronous | 18b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
 | IDT71V2546S150PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.325mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||
 | 71V416S10BEG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TFBGA | YES | 48 | RAM, SDR, SRAM - Asynchronous | 2014 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | INDUSTRIAL | Parallel | 512kB | 1 | 0.2mA | 10 ns | 3-STATE | 18b | 4 Mb | 0.02A | COMMON | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 709369L12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 355mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | 5V | COMMERCIAL | Parallel | 2 | 25 ns | 16KX18 | 3-STATE | 28b | 288 kb | 0.003A | COMMON | Synchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
 | 70V3389S5BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 415mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 100MHz | INDUSTRIAL | Parallel | 2 | 5 ns | 64KX18 | 3-STATE | 32b | 1.1 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70T3319S133BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 370mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 18b | 4 Mb | 0.015A | COMMON | Synchronous | 18b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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IDT71V256SA12PZI8
Integrated Device Technology (IDT)
分类:Memory
-
7026S55JI
Integrated Device Technology (IDT)
分类:Memory
-
7016L20PFI
Integrated Device Technology (IDT)
分类:Memory
-
7028L20PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7015L25G
Integrated Device Technology (IDT)
分类:Memory
-
70V05L15JG
Integrated Device Technology (IDT)
分类:Memory
-
709289L9PF
Integrated Device Technology (IDT)
分类:Memory
-
70V631S10PRF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577S85PFI
Integrated Device Technology (IDT)
分类:Memory
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70V24L55PF
Integrated Device Technology (IDT)
分类:Memory
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70V35S15PF8
Integrated Device Technology (IDT)
分类:Memory
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IDT71V65703S85PFI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65802S100BG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3558S133BG
Integrated Device Technology (IDT)
分类:Memory
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IDT71V3578S133PF
Integrated Device Technology (IDT)
分类:Memory
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IDT71V416VS15YG8
Integrated Device Technology (IDT)
分类:Memory
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709359L7PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V256SA10PZGI
Integrated Device Technology (IDT)
分类:Memory
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70V9269L9PRF8
Integrated Device Technology (IDT)
分类:Memory
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709369L7PF
Integrated Device Technology (IDT)
分类:Memory
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IDT71V2546S150PF8
Integrated Device Technology (IDT)
分类:Memory
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71V416S10BEG8
Integrated Device Technology (IDT)
分类:Memory
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709369L12PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V3389S5BCI8
Integrated Device Technology (IDT)
分类:Memory
-
70T3319S133BF8
Integrated Device Technology (IDT)
分类:Memory